Inventor profile of:

Eun Su YANG

City:

Suwon-si

Country:

South Korea

Published Applications:

12

Last publication date:

2024-03-07

Top Assignees for applications by Eun Su YANG

The entities that hold a legal rights for patent applications filed by inventor YANG Eun Su:

Recent patent applications by YANG Eun Su

Eun Su YANG from Suwon-si, KR has applied for patents for these inventions. The list has both pending applications and granted patents:

#1 | 2024-03-07
US20240076799A1
Chemistry; metallurgy

WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, AND WAFER AND EPITAXIAL WAFER MANUFACTURED THEREBY

#2 | 2022-03-24
US20220093419A1
Electricity

Method of cleaning wafer and wafer with reduced impurities

#3 | 2022-03-03
US20220064817A1
Chemistry; metallurgy

Silicon carbide ingot manufacturing method and silicon carbide ingot manufactured thereby

#4 | 2021-12-16
US20210388527A1
Chemistry; metallurgy

Silicon carbide ingot, wafer, method for producing a silicon carbide ingot, and method for manufacturing a wafer

#5 | 2021-12-02
US20210372005A1
Chemistry; metallurgy

Wafer manufacturing method, epitaxial wafer manufacturing method, and wafer and epitaxial wafer manufactured thereby

#6 | 2021-12-02
US20210372003A1
Chemistry; metallurgy

Method of manufacturing a silicon carbide ingot comprising moving a heater surrounding a reactor to induce silicon carbide raw materials to sublimate and growing the silicon carbide ingot on a seed crystal

#7 | 2021-10-14
US20210317593A1
Chemistry; metallurgy

Method and system for producing silicon carbide ingot

#8 | 2021-09-02
US20210272793A1
Electricity

WAFER, EPITAXIAL WAFER, METHOD FOR MANUFACTURING A WAFER AND METHOD FOR MANUFACTURING AN EPITAXIAL WAFER

#9 | 2021-04-29
US20210127462A1
Electricity

Method of measuring a graphite article, apparatus for a measurement, and ingot growing system

#10 | 2021-04-29
US20210123843A1
Physics

Method for preparing silicon carbide wafer and silicon carbide wafer

#11 | 2021-04-29
US20210123157A1
Chemistry; metallurgy

Method for preparing a SiC ingot and device for preparing a SiC ingot wherein electrical resistance of crucible body is 2.9 ohms or more

#12 | 2021-04-22
US20210115587A1
Chemistry; metallurgy

Adhesive layer of seed crystal, method for preparing a laminate using the same, and method for preparing a wafer

InventorID:

5057566 ⎘