Diamond Bar, California
United States
8
2013-08-29
8
2014-08-19
These are the the leading inventors for applications assigned to FLASHSILICON, INC.:
FLASHSILICON, INC. based in Diamond Bar, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Dual conducting floating spacer metal oxide semiconductor field effect transistor (DCFS MOSFET) and method to fabricate the same
#2 | 2011-05-12 ✅ Patent 7,995,398 granted on 2011-08-09Structures and methods for reading out non-volatile memories
#3 | 2011-05-12 ✅ Patent 8,415,735 granted on 2013-04-09Dual conducting floating spacer metal oxide semiconductor field effect transistor (DCFS MOSFET) and method to fabricate the same
#4 | 2011-03-17 ✅ Patent 7,983,087 granted on 2011-07-19Methods and structures for reading out non-volatile memory using NVM cells as a load element
#5 | 2010-12-28 ✅ Patent 7,859,903 granted on 2010-12-28Methods and structures for reading out non-volatile memory using NVM cells as a load element
#6 | 2009-07-09 ✅ Patent 8,031,524 granted on 2011-10-04Structures and methods to store information representable by a multiple-bit binary word in electrically erasable, programmable read-only memory (EEPROM)
#7 | 2009-01-22 ✅ Patent 7,733,700 granted on 2010-06-08Method and structures for highly efficient hot carrier injection programming for non-volatile memories
#8 | 2007-09-20 ✅ Patent 7,400,527 granted on 2008-07-15Bit symbol recognition method and structure for multiple bit storage in non-volatile memories
Also check out FlashSilicon, Inc.'s (Diamond Bar, United States) applicant profile with 1 patent applications submitted.
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