Assignee profile:

Shanghai Simgui Technology Co., Ltd.

City:

Shanghai

Country:

China

Published Applications:

11

Last publication date:

2020-10-29

Patent Grants:

9

Last grant date:

2021-08-17

Top Inventors for applications by Shanghai Simgui Technology Co., Ltd.

These are the the leading inventors for applications assigned to Shanghai Simgui Technology Co., Ltd.:

Recent patent applications by Shanghai Simgui Technology Co., Ltd.

Shanghai Simgui Technology Co., Ltd. based in Shanghai, CN has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2020-10-29 ✅ Patent 11,094,534 granted on 2021-08-17
US20200343086A1
Electricity

Surface oxidation method for wafer

#2 | 2020-05-28
US20200168501A1
Electricity

METHOD FOR PLANARIZING WAFER SURFACE

#3 | 2020-05-28
US20200168452A1
Electricity

METHOD FOR PLANARIZING WAFER SURFACE

#4 | 2020-03-26 ✅ Patent 11,393,772 granted on 2022-07-19
US20200098703A1
Electricity

Bonding method for semiconductor substrate, and bonded semiconductor substrate

#5 | 2019-12-26 ✅ Patent 11,158,702 granted on 2021-10-26
US20190393300A1
Electricity

Gallium nitride high electron mobility transistor having high breakdown voltage and formation method therefor

#6 | 2018-11-15 ✅ Patent 10,529,590 granted on 2020-01-07
US20180330964A1
Electricity

Annealing method for improving bonding strength

#7 | 2018-07-12 ✅ Patent 10,388,529 granted on 2019-08-20
US20180197741A1
Electricity

Method for preparing substrate with insulated buried layer

#8 | 2018-07-05 ✅ Patent 10,361,114 granted on 2019-07-23
US20180190539A1
Electricity

Method for preparing substrate with carrier trapping center

#9 | 2018-06-28 ✅ Patent 10,618,082 granted on 2020-04-14
US20180178257A1
Performing operations; transporting

Method for cleaning bonding interface before bonding

#10 | 2013-10-17 ✅ Patent 9,299,556 granted on 2016-03-29
US20130273714A1
Electricity

Method for preparing semiconductor substrate with insulating buried layer gettering process

#11 | 2012-05-17 ✅ Patent 8,633,090 granted on 2014-01-21
US20120122299A1
Electricity

Method for forming substrate with buried insulating layer

Also check out Shanghai Simgui Technology Co., Ltd.'s (Shanghai, China) applicant profile with 7 patent applications submitted.

AssigneeID:

42676 ⎘