Patents-Review.com
🔗 Permalink
Assignee profile:

ALPHA & OMEGA SEMICONDUCTOR, INC.

City:

Sunnyvale, California

Country:

United States

Published Applications:

16

Last publication date:

2014-03-27

Patent Grants:

16

Last grant date:

2015-04-21

Top Inventors for applications by ALPHA & OMEGA SEMICONDUCTOR, INC.

These are the the leading inventors for applications assigned to ALPHA & OMEGA SEMICONDUCTOR, INC.:

Recent patent applications by ALPHA & OMEGA SEMICONDUCTOR, INC.

ALPHA & OMEGA SEMICONDUCTOR, INC. based in Sunnyvale, US has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:

#1 | 2014-03-27 ✅ Patent 9,013,848 granted on 2015-04-21
US20140085760A1
Electricity

Active clamp protection circuit for power semiconductor device for high frequency switching

 #2 | 2014-02-20 ✅ Patent 8,791,723 granted on 2014-07-29
US20140049293A1
Electricity

Three-dimensional high voltage gate driver integrated circuit

 #3 | 2013-01-17 ✅ Patent 8,598,623 granted on 2013-12-03
US20130015494A1
Electricity

Nanotube semiconductor devices and nanotube termination structures

 #4 | 2012-12-27 ✅ Patent 8,557,671 granted on 2013-10-15
US20120329238A1
Electricity

Method for forming a transient voltage suppressor having symmetrical breakdown voltages

 #5 | 2012-11-08 ✅ Patent 8,383,499 granted on 2013-02-26
US20120282762A1
Electricity

Method for forming gallium nitride semiconductor device with improved forward conduction

 #6 | 2012-07-26 ✅ Patent 8,378,420 granted on 2013-02-19
US20120187481A1
Electricity

Vertical trench LDMOS transistor

 #7 | 2012-05-24 ✅ Patent 8,580,676 granted on 2013-11-12
US20120129328A1
Electricity

Multiple layer barrier metal for device component formed in contact trench

 #8 | 2011-11-17 ✅ Patent 8,253,216 granted on 2012-08-28
US20110278589A1
Electricity

Gallium nitride semiconductor device with improved forward conduction

 #9 | 2011-06-16 ✅ Patent 8,247,329 granted on 2012-08-21
US20110140167A1
Electricity

Nanotube semiconductor devices

 #10 | 2011-04-28 ✅ Patent 8,138,605 granted on 2012-03-20
US20110095361A1
Electricity

Multiple layer barrier metal for device component formed in contact trench

 #11 | 2010-12-16 ✅ Patent 7,910,486 granted on 2011-03-22
US20100317158A1
Electricity

Method for forming nanotube semiconductor devices

 #12 | 2010-12-16 ✅ Patent 8,299,494 granted on 2012-10-30
US20100314659A1
Electricity

Nanotube semiconductor devices

 #13 | 2010-11-04 ✅ Patent 8,288,839 granted on 2012-10-16
US20100276779A1
Electricity

Transient voltage suppressor having symmetrical breakdown voltages

 #14 | 2010-08-19 ✅ Patent 8,013,414 granted on 2011-09-06
US20100207232A1
Electricity

Gallium nitride semiconductor device with improved forward conduction

 #15 | 2010-08-19 ✅ Patent 7,842,974 granted on 2010-11-30
US20100207166A1
Electricity

Gallium nitride heterojunction schottky diode

 #16 | 2010-07-29 ✅ Patent 7,767,526 granted on 2010-08-03
US20100190307A1
Electricity

High density trench MOSFET with single mask pre-defined gate and contact trenches
AssigneeID:

4396 ⎘