San Jose, California
United States
71
2026-01-01
The entities that hold a legal rights for patent applications filed by inventor Wang Xiaobin:
Xiaobin Wang from San Jose, US has applied for patents for these inventions. The list has both pending applications and granted patents:
FABRICATION OF TRENCH TRANSISTOR WITH ESD IN TRENCH
#2 | 2025-05-15BATTERY PROTECTION PACKAGE HAVING CO-PACKED TRANSISTORS AND INTEGRATED CIRCUIT AND METHOD OF MAKING THE SAME
#3 | 2025-04-10APPARATUS HAVING SURFACE MOUNT PACKAGES HAVING CO-PACKED FIELD EFFECT TRANSISTORS
#4 | 2025-03-06PROGRAMMABLE GATE DESIGN FOR MULTIPLE GATE TRANSISTOR
#5 | 2025-02-27LOW THRESHOLD HIGH DENSITY TRENCH MOSFET
#6 | 2023-07-27High density shield gate transistor structure and method of making
#7 | 2023-05-11Method and circuit for sensing MOSFET temperature for load switch application
#8 | 2021-03-18Common source land grid array package
#9 | 2020-04-16MOS device with island region
#10 | 2019-10-31Nanotube semiconductor devices
#11 | 2019-02-07Termination structure for nanotube semiconductor devices
#12 | 2018-11-22Device and fabrication of MOS device with island region
#13 | 2018-11-08Trench MOSFET device and the preparation method thereof
#14 | 2018-05-10Nanotube termination structure for power semiconductor devices
#15 | 2018-01-04Trench MOSFET device and the preparation method thereof
#16 | 2017-12-28Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof
#17 | 2017-11-23Nanotube semiconductor devices
#18 | 2017-05-04THICKER BOTTOM OXIDE FOR REDUCED MILLER CAPACITANCE IN TRENCH METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET)
#19 | 2017-03-23Nanotube semiconductor devices
#20 | 2017-03-09ASSYMETRIC POLY GATE FOR OPTIMUM TERMINATION DESIGN IN TRENCH POWER MOSFETS
#21 | 2017-02-23TERMINATION STRUCTURE WITH MULTIPLE EMBEDDED POTENTIAL SPREADING CAPACITIVE STRUCTURES FOR TRENCH MOSFET
#22 | 2016-10-27Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application
#23 | 2016-10-13Nanotube semiconductor devices
#24 | 2016-04-07Nanotube semiconductor devices
#25 | 2016-03-24MOS device with island region
#26 | 2016-02-18SINGLE PACKAGE SYNCHRONOUS RECTIFIER
#27 | 2016-02-11Method of forming SGT MOSFETs with improved termination breakdown voltage
#28 | 2016-02-11Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof
#29 | 2015-11-19Semiconductor device with termination structure for power MOSFET applications
#30 | 2015-10-15MOSFET switch circuit for slow switching application
#31 | 2015-09-24Assymetric poly gate for optimum termination design in trench power MOSFETs
#32 | 2015-08-06THICKER BOTTOM OXIDE FOR REDUCED MILLER CAPACITANCE IN TRENCH METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET)
#33 | 2015-07-30Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET
#34 | 2015-06-04Nanotube semiconductor devices
#35 | 2015-04-09Dual gate oxide trench MOSFET with channel stop trench
#36 | 2014-12-25Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
#37 | 2014-12-04Fabrication of MOS device with schottky barrier controlling layer
#38 | 2014-10-09Nanotube semiconductor devices
#39 | 2014-08-28Termination trench for power MOSFET applications
#40 | 2014-06-19Termination structure with multiple embedded potential spreading capacitive for trench MOSFET and method
#41 | 2014-02-13Nanotube semiconductor devices
#42 | 2013-12-12MOSFET with improved performance through induced net charge region in thick bottom insulator
#43 | 2013-10-24Fabrication of MOS device with integrated Schottky diode in active region contact trench
#44 | 2013-09-05Method of forming an asymmetric poly gate for optimum termination design in trench power MOSFETS
#45 | 2013-08-08Fabrication of MOS device with schottky barrier controlling layer
#46 | 2013-07-11Dual gate oxide trench MOSFET with channel stop trench
#47 | 2013-01-17Nanotube semiconductor devices and nanotube termination structures
#48 | 2013-01-10MOS device with low injection diode
#49 | 2013-01-10Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
#50 | 2013-01-03Flexible Crss adjustment in a SGT MOSFET to smooth waveforms and to avoid EMI in DC-DC application
#51 | 2012-11-29Fabrication of MOS device with varying trench depth
#52 | 2012-10-18Wide and deep oxide trench in a semiconductor substrate with interspersed vertical oxide ribs
#53 | 2012-05-24ACCUFET WITH INTEGRATED CLAMPING CIRCUIT
#54 | 2012-04-05MOS device with varying contact trench lengths
#55 | 2011-09-29Method for making dual gate oxide trench MOSFET with channel stop using three or four masks process
#56 | 2011-09-01MOS device with varying trench depth
#57 | 2011-08-18Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET and method
#58 | 2011-06-16Method of filling large deep trench with high quality oxide for semiconductor devices
#59 | 2011-06-16Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
#60 | 2011-06-16Nanotube semiconductor devices
#61 | 2011-05-12Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package
#62 | 2011-03-31Reduced mask configuration for power mosfets with electrostatic discharge (ESD) circuit protection
#63 | 2010-12-16Method for forming nanotube semiconductor devices
#64 | 2010-12-16Nanotube semiconductor devices
#65 | 2009-07-02Reduced mask configuration for power MOSFETs with electrostatic discharge (ESD) circuit protection
#66 | 2009-05-21MOS device with varying trench depth
#67 | 2009-03-12MOS device with low injection diode
#68 | 2009-03-12MOS device with integrated schottky diode in active region contact trench
#69 | 2009-03-12MOS device with Schottky barrier controlling layer
#70 | 2009-01-08Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package
#71 | 2008-10-30Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
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