Hsinchu
Taiwan
16
2021-04-08
15
2023-03-07
These are the the leading inventors for applications assigned to ADVANCED ION BEAM TECHNOLOGY, INC.:
ADVANCED ION BEAM TECHNOLOGY, INC. based in Hsinchu, TW has been assigned the rights to these inventions. The list includes both Pending Applications and Patent Grants:
Apparatus and method for reduction of particle contamination by bias voltage
#2 | 2020-01-30 ✅ Patent 11,062,926 granted on 2021-07-13Wafer charges monitoring
#3 | 2019-06-27 ✅ Patent 10,984,524 granted on 2021-04-20Calibration system with at least one camera and method thereof
#4 | 2017-04-20 ✅ Patent 9,697,988 granted on 2017-07-04Ion implantation system and process
#5 | 2016-05-12 ✅ Patent 9,431,247 granted on 2016-08-30Method for ion implantation
#6 | 2015-12-31 ✅ Patent 9,281,162 granted on 2016-03-08Single bend energy filter for controlling deflection of charged particle beam
#7 | 2015-05-21 ✅ Patent 9,824,850 granted on 2017-11-21Deceleration apparatus for ribbon and spot beams
#8 | 2014-12-18 ✅ Patent 9,368,326 granted on 2016-06-14Scan head and scan arm using the same
#9 | 2014-12-09 ✅ Patent 8,907,301 granted on 2014-12-09Gas mixture method for generating ion beam
#10 | 2014-06-05 ✅ Patent 9,147,550 granted on 2015-09-29Gas mixture method and apparatus for generating ion beam
#11 | 2012-11-08 ✅ Patent 8,698,110 granted on 2014-04-15Ion implanting system
#12 | 2012-05-24ION IMPLANTATION METHOD AND ION IMPLANTER
#13 | 2012-03-15 ✅ Patent 8,558,197 granted on 2013-10-15Ion implanting system
#14 | 2010-07-06 ✅ Patent 7,750,323 granted on 2010-07-06Ion implanter and method for implanting a wafer
#15 | 2009-09-17 ✅ Patent 7,683,350 granted on 2010-03-23Ion implantation method
#16 | 2009-08-06 ✅ Patent 7,687,784 granted on 2010-03-30Method and device of ion source generation
Also check out ADVANCED ION BEAM TECHNOLOGY, INC.'s (Hsinchu, Taiwan) applicant profile with 9 patent applications submitted.
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