ClassID:

120087

C23C14/358 - CPC Classification

Classification description:

Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating; Sputtering by application of a magnetic field, e.g. magnetron sputtering; Introduction of auxiliary energy into the plasma Inductive energy

Recent Application in this class:
#1
20250157790
2025-05-15

APPARATUS AND METHOD OF DAMAGE MITIGATION AND STEP COVERAGE ENHANCEMENT

#2
20240093357
2024-03-21

Semiconductor Device, Method and Machine of Manufacture

#3
20230088552
2023-03-23

Top magnets for decreased non-uniformity in PVD

#4
20230028207
2023-01-26

Method and apparatus for use in generating plasma

#5
20220290291
2022-09-15

Semiconductor device, method and machine of manufacture

#6
20200102645
2020-04-02

Semiconductor device, method and machine of manufacture

#7
20180327893
2018-11-15

SELF-IONIZED AND INDUCTIVELY-COUPLED PLASMA FOR SPUTTERING AND RESPUTTERING

#8
20180294176
2018-10-11

Movable structure and film forming apparatus

#9
20170278686
2017-09-28

Ionized physical vapor deposition (IPVD) apparatus and method for an inductively coupled plasma sweeping source

#10
20160240351
2016-08-18

PLASMA PRODUCING APPARATUS

#11
20150325259
2015-11-12

Method of manufacturing a magnetic film having high coercivity for use as a hot seed in a magnetic write head

#12
20150056385
2015-02-26

Copper wiring structure forming method

#13
20140305802
2014-10-16

Self-ionized and inductively-coupled plasma for sputtering and resputtering

#14
20140161992
2014-06-12

Method for forming copper wiring

#15
20140106182
2014-04-17

High coercivity magnetic film for use as a hot seed in a magnetic write head and method to grow it

#16
20130256129
2013-10-03

Plasma processing apparatus

#17
20130001076
2013-01-03

Mounting table structure and plasma film forming apparatus

#18
20120228125
2012-09-13

CREATION OF MAGNETIC FIELD (VECTOR POTENTIAL) WELL FOR IMPROVED PLASMA DEPOSITION AND RESPUTTERING UNIFORMITY

#19
20120175245
2012-07-12

GAP FILL IMPROVEMENT METHODS FOR PHASE-CHANGE MATERIALS

#20
20110247928
2011-10-13

Sputtering apparatus and sputtering method

#21
20110203922
2011-08-25

Thin-film forming sputtering system

#22
20110089024
2011-04-21

Method and apparatus for improved high power impulse magnetron sputtering

#23
20110062019
2011-03-17

Sputtering apparatus

#24
20100155223
2010-06-24

Electromagnet array in a sputter reactor

#25
20100096255
2010-04-22

GAP FILL IMPROVEMENT METHODS FOR PHASE-CHANGE MATERIALS

#26
20100080928
2010-04-01

Confining Magnets In Sputtering Chamber

#27
20090242385
2009-10-01

METHOD OF DEPOSITING METAL-CONTAINING FILMS BY INDUCTIVELY COUPLED PHYSICAL VAPOR DEPOSITION

#28
20090233438
2009-09-17

SELF-IONIZED AND INDUCTIVELY-COUPLED PLASMA FOR SPUTTERING AND RESPUTTERING

#29
20090107834
2009-04-30

CHALCOGENIDE TARGET AND METHOD

#30
20080190760
2008-08-14

RESPUTTERED COPPER SEED LAYER

#31
20080110747
2008-05-15

Self-ionized and inductively-coupled plasma for sputtering and resputtering

#32
20080067063
2008-03-20

Systems and methods for magnetron deposition

#33
20080023318
2008-01-31

Sputtering apparatus and method, and sputtering control program

#34
20070193982
2007-08-23

Physical vapor deposition plasma reactor with arcing suppression

#35
20070181421
2007-08-09

Sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation

#36
20070144901
2007-06-28

Pulsed cathodic arc plasma

#37
20070131544
2007-06-14

Enhanced reliability deposition baffle for iPVD

#38
20070077683
2007-04-05

Method and apparatus for a metallic dry-filling process

#39
20070077682
2007-04-05

Method and apparatus for a metallic dry-filling process

#40
20070074968
2007-04-05

ICP source for iPVD for uniform plasma in combination high pressure deposition and low pressure etch process

#41
20070068795
2007-03-29

Hollow body plasma uniformity adjustment device and method

#42
20070034498
2007-02-15

Pulsed magnetron sputtering deposition with preionization

#43
20060266291
2006-11-30

Thin film forming device and thin film forming method

#44
20060191876
2006-08-31

Method of performing physical vapor deposition with RF plasma source power applied to the target using a magnetron

#45
20060172536
2006-08-03

Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece

#46
20060172517
2006-08-03

Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target

#47
20060169584
2006-08-03

Physical vapor deposition plasma reactor with RF source power applied to the target

#48
20060169582
2006-08-03

Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron

#49
20060169578
2006-08-03

Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas

#50
20060169576
2006-08-03

Physical vapor deposition plasma reactor with VHF source power applied through the workpiece

#51
20060124455
2006-06-15

Thin film forming device and thin film forming method

#52
20050279624
2005-12-22

Highly ionized PVD with moving magnetic field envelope for uniform coverage of feature structure and wafer

#53
20050263390
2005-12-01

Multi-step process for forming a metal barrier in a sputter reactor

#54
20050255691
2005-11-17

Self-ionized and inductively-coupled plasma for sputtering and resputtering

#55
20050211547
2005-09-29

Reactive sputter deposition plasma reactor and process using plural ion shower grids

#56
20050211546
2005-09-29

Reactive sputter deposition plasma process using an ion shower grid

#57
20050211170
2005-09-29

Chemical vapor deposition plasma reactor having plural ion shower grids

#58
20050205414
2005-09-22

Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma

#59
20050199491
2005-09-15

Shields usable with an inductively coupled plasma reactor

#60
20050146036
2005-07-07

Method of forming a metal silicide layer on non-planar-topography polysilicon

#61
20050103623
2005-05-19

Ionized physical vapor deposition apparatus using helical self-resonant coil

#62
20050023133
2005-02-03

Temperature optimization of a physical vapor deposition process to prevent extrusion into openings

#63
20050006222
2005-01-13

Self-ionized and inductively-coupled plasma for sputtering and resputtering