120169 ⎘
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material; Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides; Carbides Silicon carbide
Silicon carbide manufacturing device and method of manufacturing silicon carbide
#602Method for forming silicon carbide film containing oxygen
#603Deposition over mixed substrates using trisilane
#604Film formation method, die, and method of manufacturing the same
#605Method for forming a group III nitride material on a silicon substrate
#606Method of SiC single crystal growth and SiC single crystal
#607Method for Producing a Hollow Cylinder From Synthetic Quartz Glass, Using a Retaining Device
#608Ribbed CVC structures and methods of producing
#609Method for forming silicon-containing film and method for decreasing number of particles
#610GCIB Cluster Tool Apparatus and Method of Operation
#611Copper interconnect wiring and method and apparatus for forming thereof
#612Methods of modifying interlayer adhesion
#613Epitaxial and polycrystalline growth of SiGeCand SiCalloy layers on Si by UHV-CVD
#614Deposition of amorphous silicon-containing films
#615Method of forming vertical inorganic alignment layer and liquid crystal display apparatus having the same
#616High-purity crystal growth
#617Process for deposition of semiconductor films
#618Method for epitaxial growth of silicon carbide
#619Method of depositing low k barrier layers
#620Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture
#621Method of forming an insulating capping layer for a copper metallization layer
#622METHOD OF FABRICATING SILICON CARBIDE-CAPPED COPPER DAMASCENE INTERCONNECT
#623Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)
#624Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
#625Selective deposition of silicon-containing films
#626Leading edge components for high speed air and space craft
#627Method for forming a multiple layer passivation film and a device incorporating the same
#628Method of eliminating photoresist poisoning in damascene applications
#629Methods of depositing electrically active doped crystalline Si-containing films
#630Method for forming SiC-based film and method for fabricating semiconductor device
#631Adhesion improvement for low k dielectrics
#632Method of depositing dielectric films
#633Plasma processing apparatus with insulated gas inlet pore
#634Copper interconnect wiring and method of forming thereof
#635In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
#636Low temperature susceptor cleaning
#637Method of making chemical vapor composites
#638Adhesion improvement for low k dielectrics to conductive materials
#639Method of fabricating silicon carbide-capped copper damascene interconnect
#640SiC material, semiconductor device fabricating system and SiC material forming method
#641Manufacturable low-temperature silicon carbide deposition technology
#642Advanced low dielectric constant barrier layers
#643Method and apparatus for the chemical vapor deposition of materials
#644Thin films and methods of making them
#645Ceramic thin film on various substrates, and process for producing same
#646Adhesion improvement for low k dielectrics to conductive materials
#647Support fixture for semiconductor wafers and associated fabrication method
#648Method of modifying interlayer adhesion
#649Process for deposition of semiconductor films
#650Adhesion improvement for low k dielectrics
#651Silicon carbide deposition for use as a low dielectric constant anti-reflective coating
#652System and method of CVD chamber cleaning
#653Ultra low dielectric constant thin film
#654Ceramic thin film on various substrates, and process for producing same
#655Drill bit with a moissanite (silicon carbide) cutting element
#656Manufacturing device for buried insulating layer type single crystal silicon carbide substrate
#657Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)
#658Articles formed by chemical vapor deposition and methods for their manufacture
#659Silicon carbide-coated carbonaceous material and carbonaceous material to be coated with silicon carbide
#660Silicon carbide and other films and method of deposition
#661Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
#662Ultra low dielectric constant thin film
#663Low nitrogen concentration carbonaceous material and manufacturing method thereof
#664Apparatus and method for depositing large area coatings on planar surfaces
#665Process for deposition of semiconductor films
#666Deposition over mixed substrates
#667Method of forming a diffusion barrier
#668Method of forming low-k films
#669Method of improving stability in low k barrier layers
#670Production method of SiC monitor wafer
#671Method of depositing dielectric films
#672Silicon carbide with high thermal conductivity
#673Method of processing a CMC airfoil
#674Formation of field-tunable silicon carbide defect qubits with optically transparent electrodes and silicon oxide surface passivation
#675Methods of depositing an alpha-silicon-carbide-containing film at low temperature