120169 ⎘
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material; Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides; Carbides Silicon carbide
METHOD TO DEPOSIT A SILICON CARBIDE LAYER
#2WAFER SUPPORT DEVICE AND FILM FORMING METHOD
#3COATING FOR GRAPHITE VESSELS USED IN MELT INFILTRATION
#4SUSCEPTOR AND SIC EPITAXIAL GROWTH APPARATUS
#5PHOTON-ASSISTED CHEMICAL ETCHING OF SILICON CARBIDE FILMS FROM REACTION CHAMBER PARTS
#6FILM FORMATION METHOD, SUSCEPTOR, AND VAPOR GROWTH APPARATUS
#7METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
#8REFRACTORY CARBIDE LAYER
#9PHOTOELECTRIC CELL WITH SILICON CARBIDE ELECTRODE AND PRODUCTION METHOD FOR SAME
#10CHAMBER FOR PROCESSING SUBSTRATES AT HIGH TEMPERATURES
#11SUSCEPTOR
#12REACTION CHAMBER ASSEMBLY
#13METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#14SUBSTRATE COMPRISING CONFORMAL METAL CARBIDE COATING
#15METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
#16METHODS OF FILLING RECESSES ON SUBSTRATE SURFACES AND FORMING VOIDS THEREIN
#17PRECURSOR, GAS MIXTURE, AND METHOD FOR DEPOSITING A LOW K DIELECTRIC FILM
#18IN-SITU PYROMETER FOR SILICON CARBIDE WAFER
#19SiC Growth Substrate, CVD Reactor and Method for the Production of SiC
#20MONCRYSTALLINE COATINGS FOR REACTOR PARTS SUITABLE FOR THE EPITAXIAL DEPOSITION OF SEMICONDUCTOR FILMS
#21EPITAXIAL GROWTH APPARATUS FOR SILICON CARBIDE SEMICONDUCTOR
#22WAFER SUPPORT DEVICE AND SiC EPITAXIAL GROWTH APPARATUS
#23DEFLECTOR FOR CHAMBER CLEANING
#24SIDE BLOCKS FOR GAS ACTIVATION, AND RELATED PROCESSING CHAMBERS, PROCESS KITS, AND METHODS
#25ABRASION-RESISTANT COATINGS FOR HIGH-TEMPERATURE SUBSTRATES
#26PROCESSING APPARATUS, PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RECORDING MEDIUM
#27HIGH PURITY POLYSILOCARB DERIVED SILICON CARBIDE MATERIALS, APPLICATIONS AND PROCESSES
#28SEAM PERFORMANCE IMPROVEMENT FOR LARGE AREA GAPFILL
#29COMPOSITIONS COMPRISING SILACYCLOALKANES AND METHODS USING SAME FOR DEPOSITION OF SILICON-CONTAINING FILM
#30COMPOSITIONS AND METHODS USING SAME FOR DEPOSITION OF SILICON-CONTAINING FILM
#31COMPONENT TO BE USED FOR PLASMA PROCESSING DEVICE, METHOD FOR MANUFACTURING COMPONENT TO BE USED FOR PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING DEVICE
#32PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY
#33COMPONENT FOR FABRICATING A SEMICONDUCTOR, HAVING PLURALITY OF LAYERS HAVING DIFFERENT TRANSMITTANCES, AND METHOD FOR MANUFACTURING SAME
#34SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
#35SiC FORMED BODY AND METHOD FOR PRODUCING SiC FORMED BODY
#36REMOTE PLASMA BASED DEPOSITION OF SILICON CARBIDE FILMS USING SILICON-CONTAINING AND CARBON-CONTAINING PRECURSORS
#37Composite Structures for Semiconductor Process Chambers
#38VAPOR PHASE GROWTH APPARATUS
#39SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER
#40METHOD OF FORMING SILICON CARBIDE CONVERSION COAT ON CARBON USING GAS PHASE REACTIONS
#41CARBON RICH LAYER FOR SCALE CONTROL
#42METHOD FOR FORMING INSULATION FILM
#43METHODS FOR FORMING LOW-K DIELECTRIC MATERIALS WITH REDUCED DIELECTRIC CONSTANT AND INCREASED DENSITY
#44METHOD FOR REDUCING STACKING FAULTS IN SILICON CARBIDE, AND STRUCTURE CREATED BY MEANS OF SAID METHOD
#45METHODS AND ASSEMBLIES FOR DEPOSITING MATERIAL IN A GAP
#46FOLDABLE SUBSTRATES AND METHODS OF MAKING
#47PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY
#48CVD REACTOR WITH A SUPPORTING RING, AND SUPPORTING RING FOR A SUBSTRATE
#49MICROSTRUCTURED FIBER INTERFACE COATINGS FOR COMPOSITES
#50METHODS FOR FORMING LOW-K DIELECTRIC MATERIALS
#51Batch Mode Silicon Carbide Epitaxial Reactor
#52SUPPORT SOCKET AND METHOD FOR MANUFACTURING PARTS USING SUPPORT SOCKET
#53LOW-K ALD GAP-FILL METHODS AND MATERIAL
#54BACK SIDE DESIGN FOR FLAT SILICON CARBIDE SUSCEPTOR
#55SYSTEMS AND METHODS FOR DEPOSITING LOW-K DIELECTRIC FILMS
#56METAL COMPONENTS WITH INERT VAPOR PHASE COATING ON INTERNAL SURFACES
#57METAL COMPONENTS WITH INERT VAPOR PHASE COATING ON INTERNAL SURFACES
#58METAL COMPONENTS WITH INERT VAPOR PHASE COATING ON INTERNAL SURFACES
#59METAL COMPONENTS WITH INERT VAPOR PHASE COATING ON INTERNAL SURFACES
#60METAL COMPONENTS WITH INERT VAPOR PHASE COATING ON INTERNAL SURFACES
#61METAL COMPONENTS WITH INERT VAPOR PHASE COATING ON INTERNAL SURFACES
#62METAL COMPONENTS WITH INERT VAPOR PHASE COATING ON INTERNAL SURFACES
#63METAL COMPONENTS WITH INERT VAPOR PHASE COATING ON INTERNAL SURFACES
#64SILICON CARBIDE THIN FILMS AND VAPOR DEPOSITION METHODS THEREOF
#65VAPOR PHASE GROWTH METHOD
#66INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE
#67COMPONENT FOR SEMICONDUCTOR PRODUCTION APPARATUS AND METHOD FOR PRODUCING SUCH COMPONENT
#68METHOD FOR PRODUCING A SILICON CARBIDE-BASED SEMICONDUCTOR STRUCTURE AND INTERMEDIATE COMPOSITE STRUCTURE
#69Method of processing a CMC airfoil
#70PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY
#71Conformal deposition of silicon carbide films
#72SILICON CARBIDE WAFER MANUFACTURING APPARATUS
#73Selective Deposition of Thin Films with Improved Stability
#74METHODS FOR PROVIDING A PRECURSOR MIXTURE TO A REACTION CHAMBER
#75PRECURSORS AND RELATED METHODS
#76Method and Device for Producing a SiC Solid Material
#77COMPOSITIONS AND METHODS FOR DEPOSITING SILICON-CONTAINING FILMS
#78REACTION CHAMBER COMPONENT, DEPOSITION APPARATUS PROVIDED WITH SUCH COMPONENT AND METHOD OF PROTECTING SUCH COMPONENT
#79Method of processing substrate and method of manufacturing semiconductor device by forming film
#80METHOD OF FORMING TREATED SILICON-CARBON MATERIAL
#81Method and Device for Producing a SiC Solid Material
#82METHOD FOR FORMING LAYER ON DIFFERENT-DENSITY PATTERN REGIONS
#83METHOD FOR PRODUCING A SOLAR CELL
#84Method and Device for Producing a SiC Solid Material
#85Method and Device for Producing a SiC Solid Material
#86PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM
#87REFRACTORY CARBIDE LAYER
#88METHOD OF COATING A CHAMBER COMPONENT
#89METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
#90SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer preliminary class
#91SEMICONDUCTOR MANUFACTURING APPARATUS AND COMPONENT FOR SEMICONDUCTOR MANUFACTURING APPARATUS
#92PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, PROCESSING APPARATUS, AND RECORDING MEDIUM
#93METHOD OF FORMING SiOCN LAYER
#94HIGH-TEMPERATURE METHODS OF FORMING PHOTORESIST UNDERLAYER AND SYSTEMS FOR FORMING SAME
#95FABRICATING APPARATUS OF SIC EPITAXIAL WAFER AND FABRICATION METHOD OF THE SIC EPITAXIAL WAFER
#96SUSCEPTOR
#97CVD REACTOR WITH TEMPERATURE-CONTROLLABLE GAS INLET REGION
#98METHOD FOR CVD DEPOSITION OF N-TYPE DOPED SILICON CARBIDE AND EPITAXIAL REACTOR
#99FILM DEPOSITION METHOD
#100REFRACTORY CARBIDE MULTILAYER
#101Continuous multiple tow coating reactor
#102METHOD AND PACKAGE FOR REDUCING THE DEGRADATION OF A DRUG AND/OR EXCIPIENT, E.G. POLYSORBATE STABILIZER, IN A PHARMACEUTICAL PRODUCT
#103Apparatus for growing a semiconductor wafer and associated manufacturing process
#104Apparatus and method for manufacturing hexagonal crystals
#105Method of in situ ceramic coating deposition
#106SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
#107Method for producing a composite structure comprising a thin layer of monocrystalline sic on a carrier substrate of polycrystalline SiC
#108VAPOR PHASE GROWTH APPARATUS
#109COATED SUBSTRATES AND METHODS FOR THE PREPARATION THEREOF
#110DEFLECTOR FOR CHAMBER CLEANING
#111Method for depositing a coating on a yarn in a microwave field
#112Aerospace mirror manufacturing assembly
#113Lightweight, High-Precision Silicon Carbide Aerospace Mirror
#114Process of Manufacture a Nuclear Component with Metal Substrate by Dlimocvd and Method against Oxidation/Hydriding of Nuclear Component
#115METAL COMPONENTS WITH INERT VAPOR PHASE COATING ON INTERNAL SURFACES
#116ATOMIC LAYER DEPOSITION ON OPTICAL STRUCTURES
#117TWO DIMENSIONAL SILICON CARBIDE MATERIALS AND FABRICATION METHODS THEREOF
#118CONFORMAL DEPOSITION OF SILICON CARBIDE FILMS USING HETEROGENEOUS PRECURSOR INTERACTION
#119Method for manufacturing a composite structure comprising a thin layer made of monocrystalline sic on a carrier substrate made of SiC
#120PARTICLE ENHANCEMENT OF CERAMIC MATRIX COMPOSITES, METHOD OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME
#121SEAM MITIGATION AND INTEGRATED LINER FOR GAP FILL
#122METHODS OF FILLING RECESSES ON SUBSTRATE SURFACES AND FORMING VOIDS THEREIN
#123Microstructured fiber interface coatings for composites
#124Method for manufacturing a composite structure comprising a thin layer made of monocrystalline SiC on a carrier substrate made of SiC
#125METHOD AND APPARATUS FOR FORMING SILICON CARBIDE-CONTAINING FILM
#126METHOD AND APPARATUS FOR FORMING SILICON CARBIDE-CONTAINING FILM
#127Die and piston of an SPS apparatus, SPS apparatus comprising same, and method of sintering, densification or assembly in an oxidizing atmosphere using said apparatus
#128Formation of SiOC thin films
#129METHOD OF FORMING A STRUCTURE INCLUDING A SILICON CARBIDE LAYER
#130SIC STRUCTURE FORMED BY CVD METHOD
#131SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer
#132COATED SUBSTRATE SUPPORT ASSEMBLY FOR SUBSTRATE PROCESSING
#133METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER OF MONOCRYSTALLINE SIC ON AN SIC CARRIER SUBSTRATE
#134SUSCEPTOR AND MANUFACTURING METHOD THEREOF
#135VANADIUM SILICON CARBIDE FILM, VANADIUM SILICON CARBIDE FILM COATED MEMBER, AND MANUFACTURING METHOD OF VANADIUM SILICON CARBIDE FILM COATED MEMBER
#136LAMINATE AND METHOD FOR MANUFACTURING LAMINATE
#137Method for producing ceramic multilayered tube used as cladding for fuel element in nuclear power plant
#138POLYCRYSTALLINE SIC ARTICLE AND METHOD FOR MANUFACTURING SAME
#139Method of Manufacture for a Lightweight, High-Precision Silicon Carbide Mirror Assembly
#140Deposition of low-k films
#141METHODS AND SYSTEMS FOR PREPARING COMPOSITE CRYSTALS
#142Method and device for depositing a coating on a continuous fibre
#143Silicon carbide epitaxial substrate and method for manufacturing same
#144HEAT INSULATING CONTAINER AND METHOD FOR PRODUCING THE SAME
#145Compositions comprising silacycloalkanes and methods using same for deposition of silicon-containing film
#146SiC epitaxial wafer, production method therefor, and defect identification method
#147METHODS OF FILLING RECESSES ON SUBSTRATE SURFACE, STRUCTURES FORMED USING THE METHODS, AND SYSTEMS FOR FORMING SAME
#148METHOD OF MAKING COMPOSITE ARTICLES FROM SILICON CARBIDE
#149ALD method with multi-chambers for sic or multi-elements epitaxial growth
#150SixNy AS A NUCLEATION LAYER FOR SiCxOy
#151Method for forming insulation film
#152METHOD OF REPAIRING CERAMIC COMPOSITE ARTICLES
#153Films of desired composition and film properties
#154Films of desired composition and film properties
#155Films of desired composition and film properties
#156Films of desired composition and film properties
#157Apparatus and method for manufacturing a wafer
#158Plasma induced modification of silicon carbide surface
#159Vapor phase growth apparatus and vapor phase growth method
#160SiC epitaxial wafer and method for producing SiC epitaxial wafer
#161Pellicle intermediary body, pellicle, method for manufacturing of pellicle intermediary body, and pellicle manufacturing method
#162SIC EPITAXIAL WAFER, MANUFACTURING APPARATUS OF A SIC EPITAXIAL WAFER, FABRICATION METHOD OF A SIC EPITAXIAL WAFER, AND SEMICONDUCTOR DEVICE
#163Deposition of low-κ films
#164SiC material and method for manufacturing same
#165Conformal deposition of silicon carbide films
#166Semiconductor wafer evaluation apparatus and semiconductor wafer manufacturing method
#167Methods For Making Silicon Containing Films That Have High Carbon Content
#168HIGH PURITY INGOT FOR WAFER PRODUCTION
#169Compound semiconductor substrate, a pellicle film, and a method for manufacturing a compound semiconductor substrate
#170Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin using the same
#171Mitigating pyrophoric deposits during SiC CVI/CVD processes by introducing a mitigation agent into an exhaust conduit downstream of a reaction chamber
#172Neural interface device manufacturing method
#173Selective Deposition of Germanium
#174Silicon carbide thin films and vapor deposition methods thereof
#175Method of in situ ceramic coating deposition
#176FILMS OF DESIRED COMPOSITION AND FILM PROPERTIES
#177Film forming method and film forming apparatus
#178POLYMER PROCESS BAGS AND METHODS FOR MANUFACTURING THE SAME
#179Systems and methods for depositing low-κdielectric films
#180Systems and methods for cleaning low-k deposition chambers
#181BACK SIDE DESIGN FOR FLAT SILICON CARBIDE SUSCEPTOR
#182Scanning mirror and manufacturing method for scanning mirror
#183Composite tape with LCVD-formed additive material in constituent layer(s)
#184VAPOR PHASE GROWTH METHOD
#185Low-κ ALD gap-fill methods and material
#186Method of manufacturing silicon carbide epitaxial wafer
#187Thin film deposition process
#188PLASMA PROCESSING CHAMBER
#189Systems and methods for depositing low-k dielectric films
#190Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium
#191Surface Smoothing of Workpieces
#192SiC MEMBER AND MANUFACTURING METHOD THEREOF
#193Chemical-vapor-deposition silicon carbide bulk having improved etching characteristic
#194Semiconductor manufacturing device
#195Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
#196Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
#197METHOD FOR CLEANING SEMICONDUCTOR PRODUCTION CHAMBER
#198Silicon precursor compound, preparation method therefor, and silicon-containing film formation method using same
#199COATED SYSTEMS FOR HYDROGEN
#200TUBULAR BODY CONTAINING SiC FIBERS
#201Film forming method and film forming apparatus
#202CVD reactor with carrying ring for substrate handling, and use of a carrying ring on a CVD reactor
#203High purity fiber feedstock for loose grain production
#204Method for manufacturing silicon carbide base body, method for manufacturing semiconductor device, silicon carbide base body, and semiconductor device
#205SUSCEPTOR
#206Methods of processing substrate and manufacturing semiconductor device by forming film, substrate processing apparatus, and recording medium
#207SiC SINGLE CRYSTAL, METHOD OF MANUFACTURING SiC INGOT, AND METHOD OF MANUFACTURING SiC WAFER
#208Solid state heater and method of manufacture
#209FILM FORMING APPARATUS
#210Method for manufacturing silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
#211Continuous multiple tow coating reactor
#212Microstructured fiber interface coatings for composites
#213FILM FORMING APPARATUS AND FILM FORMING METHOD
#214Production method for composite material
#215SUSCEPTOR, CVD APPARATUS, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER
#216Apparatus for growing a semiconductor wafer and associated manufacturing process
#217Method and device for depositing a coating on a continuous fibre
#218Process for manufacturing a silicon carbide coated body
#219Low-k dielectric films
#220SUSCEPTOR, METHOD FOR PRODUCING EPITAXIAL SUBSTRATE, AND EPITAXIAL SUBSTRATE
#221Film structure reproduction method and reproduction film structure
#222PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY
#223PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY
#224SILICON CARBIDE EPITAXIAL GROWTH DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE EPITAXIAL WAFER
#225SiC film structure
#226SiC freestanding film structure
#227Silylamine compound, composition for depositing silicon-containing thin film containing the same, and method for manufacturing silicon-containing thin film using the composition
#228Low deposition rates for flowable PECVD
#229SUSCEPTOR
#230Wire grid polarizer with silane protective coating
#231Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
#232PROCESS FOR MANUFACTURING A SILICON CARBIDE COATED BODY
#233Process for manufacturing a silicon carbide coated body
#234Epitaxial silicon carbide single crystal wafer and process for producing the same
#235Ceramic matrix composite manufacturing
#236Cyclic flowable deposition and high-density plasma treatment processes for high quality gap fill solutions
#237Formation of SiOC thin films
#238Methods for depositing silicon-containing films
#239Silane recirculation for rapid carbon/silicon carbide or silicon carbide/silicon carbide ceramic matrix composites
#240FILM FORMING METHOD, METHOD FOR CLEANING PROCESSING CHAMBER FOR FILM FORMATION, AND FILM FORMING APPARATUS
#241High-temperature component and method for the production thereof
#242SiC MEMBER AND MANUFACTURING METHOD THEREOF
#243High refractive index hydrogenated silicon carbide and process
#244Surface smoothing of workpieces
#245SiC epitaxial wafer and method for manufacturing same
#246COATING DEVICE AND COATING METHOD FOR TUBE-TYPE PERC SOLAR CELL
#247SiC chemical vapor deposition apparatus
#248Seal coats to prevent silicon loss during re-melt infiltration of Si containing composites
#249Vapor phase growth apparatus and vapor phase growth method
#250SiC CHEMICAL VAPOR DEPOSITION DEVICE
#251SUSCEPTOR AND CHEMICAL VAPOR DEPOSITION APPARATUS
#252SiC chemical vapor deposition apparatus and method of manufacturing SiC epitaxial wafer
#253A Compound Semiconductor Substrate, A Pellicle Film, And A Method For Manufacturing A Compound Semiconductor Substrate
#254Methods of encapsulation
#255SiC composite substrate and method for manufacturing same
#256Apparatus and method for manufacturing a wafer
#257Method for producing single crystal substrate having a plurality of grooves using a pair of masks
#258Display device with encapsulation layer with varying ratios of carbon to silicon and oxygen to silicon and method of fabricating the same
#259Deposition apparatus having particular arrangement of raw material supply port, partition plate, and opening for measuring a temperature
#260Method of forming conformal silicon carbide film by cyclic CVD
#261Silane recirculation for rapid carbon/silicon carbide or silicon carbide/silicon carbide ceramic matrix composites
#262COMPOSITION FOR DEPOSITING SILICON-CONTAINING THIN FILM AND METHOD FOR MANUFACTURING SILICON-CONTAINING THIN FILM USING THE SAME
#263Composition for depositing silicon-containing thin film containing bis(aminosilyl)alkylamine compound and method for manufacturing silicon-containing thin film using the same
#264Methods For Making Silicon Containing Films That Have High Carbon Content
#265Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrate
#266Semiconductor manufacturing component comprising deposition layer covering interlayer boundary and manufacturing method thereof
#267Film forming method for SiC film
#268Ceramic reinforced zirconium alloy nuclear fuel cladding with intermediate oxidation resistant layer
#269PART FOR MANUFACTURING SEMICONDUCTOR, PART FOR MANUFACTURING SEMICONDUCTOR CONTAINING COMPOSITE COATING LAYER, AND METHOD FOR MANUFACTURING SAME
#270METHOD FOR MANUFACTURING A SILICON CARBIDE EPITAXIAL SUBSTRATE
#271Electrode plate for plasma processing apparatus and method for regenerating electrode plate for plasma processing apparatus
#272Method of making composite articles from silicon carbide
#273Gas distribution for chemical vapor deposition/infiltration
#274Process of manufacture a nuclear component with metal substrate by DLI-MOCVD and method against oxidation/hydriding of nuclear component
#275Remote plasma based deposition of boron nitride, boron carbide, and boron carbonitride films
#276ENGINEERED SIC-SIC COMPOSITE AND MONOLITHIC SIC LAYERED STRUCTURES
#277Pedestal for supporting a seed for SiC single crystal growth which includes a gas-permeable region of reduced thickness
#278Silicon carbide substrate, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor device
#279Method of chemical vapor infiltration or deposition
#280Silicon carbide substrate production method and silicon carbide substrate
#281METHOD TO OBTAIN SiC CLASS OF FILMS OF DESIRED COMPOSITION AND FILM PROPERTIES
#282METHOD FOR FORMING Si-CONTAINING FILM
#283Compositions and methods using same for deposition of silicon-containing film
#284Method of manufacture for a lightweight, high-precision silicon carbide mirror assembly
#285Apparatus and method for coating specimens
#286CHUCK PIN, METHOD FOR MANUFACTURING A CHUCK PIN, APPARATUS FOR TREATING A SUBSTRATE
#287Process for the generation of thin silicon-containing films
#288Silicon carbide member for plasma processing apparatus, and production method therefor
#289Scratch-resistant materials and articles including the same
#290Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus
#291SiC MEMBER AND SUBSTRATE-HOLDING MEMBER FORMED OF SiC MEMBER, AND METHOD FOR PRODUCING THE SAME
#292Conformal deposition of silicon carbide films
#293Method for stabilizing chlorosilane polymer
#294Silicon carbide epitaxial substrate and method for manufacturing a silicon carbide semiconductor device
#295Mitigating pyrophoric deposits in exhaust piping during SIC CVI/CVD processes by introducing water vapor into an outlet portion of a reaction chamber
#296Grinding disk and method of manufacturing the same
#297SiC epitaxial wafer containing large pit defects with a surface density of 0.5 defects/CM2 or less, and production method therefor
#298DEVICE FOR GROWING SILICON CARBIDE OF SPECIFIC SHAPE
#299Gap fill using carbon-based films
#300Method for producing a SiC epitaxial wafer containing a total density of large pit defects and triangular defects of 0.01 defects/cm2 or more and 0.6 defects/cm2 or less