120170 ⎘
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material; Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides Nitrides
Selective deposition of noble metal thin films
#1202Enhanced copper growth with ultrathin barrier layer for high performance interconnects
#1203Method of depositing thin film on wafer
#1204Tungsten nitride atomic layer deposition processes
#1205ALD formed titanium nitride films
#1206Supplying method of chemicals
#1207Enhanced copper growth with ultrathin barrier layer for high performance interconnects
#1208Plasma-enhanced cyclic layer deposition process for barrier layers
#1209Systems and methods of forming refractory metal nitride layers using disilazanes
#1210Apparatus and method for depositing tungsten nitride
#1211Systems and methods for forming metal-containing layers using vapor deposition processes
#1212High-K dielectric materials and processes for manufacturing them
#1213Plasma treatment apparatus and plasma treatment method
#1214Method for forming barrier film and method for forming electrode film
#1215Method for depositing tungsten-containing layers by vapor deposition techniques
#1216Plasma processing, deposition, and ALD methods
#1217Atomic layer deposition method of forming conductive metal nitride-comprising layers
#1218Apparatus and method for generating a chemical precursor
#1219Methods for forming atomic layers and thin films including a tantalum amine derivative and devices including the same
#1220Semiconductor constructions
#1221Methods of producing integrated circuit devices utilizing tantalum amine derivatives
#1222DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS AND DEPOSITION RATE IMPROVEMENT FOR RTCVD PROCESSES
#1223Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same
#1224Methods of forming materials comprising tungsten and nitrogen, and methods of forming capacitors
#1225Method for depositing metallic nitride series thin film
#1226Cyclical deposition of refractory metal silicon nitride
#1227Post deposition plasma cleaning system and method
#1228Plasma enhanced atomic layer deposition system and method
#1229Method for hafnium nitride deposition
#1230Coated cutting tool insert
#1231Nanoparticle compositions, coatings and articles made therefrom, methods of making and using said compositions, coatings and articles
#1232METHOD FOR PECVD DEPOSITION OF SELECTED MATERIAL FILMS
#1233Method for forming film
#1234Atomic layer deposition of Hf3N4/HfO2 films as gate dielectrics
#1235Surface-coated cermet cutting tool with hard coating layer exhibiting excellent chipping resistance in high-speed intermittent cutting
#1236Preparation of metal silicon nitride films via cyclic deposition
#1237Method and apparatus for preventing products of TiCLand NHor other feed gas reactions from damaging vacuum pumps in TiN or other deposition systems
#1238Method for producing a dielectric material on a semiconductor device and semiconductor device
#1239Processing apparatus and processing method
#1240In-situ formation of metal insulator metal capacitors
#1241Integration of ALD tantalum nitride for copper metallization
#1242Thin film layer, heating electrode, phase change memory including thin film layer and methods for forming the same
#1243Doped nitride film, doped oxide film and other doped films
#1244Chemical vapor deposition precursors for deposition of tantalum-based materials
#1245Method of depositing a metal compound layer and apparatus for depositing a metal compound layer
#1246Method for forming a titanium nitride layer and method for forming a lower electrode of a MIM capacitor using the titanium nitride layer
#1247Vapor deposition of tungsten nitride
#1248Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
#1249Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
#1250Direct liquid injection system and method for forming multi-component dielectric films
#1251Methods and apparatus for forming a titanium nitride layer
#1252Methods and apparatus for forming a titanium nitride layer
#1253Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures
#1254Apparatus and method of forming a layer on a semiconductor substrate
#1255Deposition of tungsten nitride
#1256Depositing titanium silicon nitride films for forming phase change memories
#1257Methods for chemical vapor deposition of titanium-silicon-nitrogen films
#1258Novel deposition of high-k MSiON dielectric films
#1259Method for depositing nanolaminate thin films on sensitive surfaces
#1260Plasma chemical vapor deposition methods
#1261Metal nitride carbide deposition by ALD
#1262Apparatus and method for plasma assisted deposition
#1263Method and system for binding halide-based contaminants
#1264Thin-film formation in semiconductor device fabrication process and film deposition apparatus
#1265Film forming method
#1266Film forming method
#1267Manufacturing method of a semiconductor device
#1268Deposition of TiN films in a batch reactor
#1269Methods and apparatus for forming barrier layers in high aspect ratio vias
#1270Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus
#1271Deposition methods using heteroleptic precursors
#1272Method for forming tungsten nitride film
#1273Plasma processing, deposition and ALD methods
#1274Method of forming a material film
#1275Deposition method of TiN thin film having a multi-layer structure
#1276Method of forming a capacitor
#1277Systems and methods for forming metal-containing layers using vapor deposition processes
#1278Surface-coated cermet cutting tool with hard coating layer having excellent chipping resistance in high-speed intermittent cutting work
#1279Integrated electroless deposition system
#1280Formation of a tantalum-nitride layer
#1281Gas switching mechanism for plasma processing apparatus
#1282Method and apparatus of forming thin film using atomic layer deposition
#1283Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
#1284Method of forming titanium nitride layer and method of fabricating capacitor using the same
#1285Tantalum amide complexes for depositing tantalum-containing films, and method of making same
#1286Methods of forming metal nitride, and methods of forming capacitor constructions
#1287Film-forming method
#1288Method of forming a layer on a semiconductor substrate
#1289Systems and methods of forming refractory metal nitride layers using organic amines
#1290DOPED NITRIDE FILM, DOPED OXIDE FILM AND OTHER DOPED FILMS
#1291Method and apparatus for processing a semiconductor substrate
#1292Integration of titanium and titanium nitride layers
#1293Method of forming amorphous TiN by thermal chemical vapor deposition (CVD)
#1294Vacuum film-forming apparatus
#1295Methods and apparatus for forming barrier layers in high aspect ratio vias
#1296Thin film including multi components and method of forming the same
#1297System and method for forming multi-component dielectric films
#1298CVD tantalum compounds for FET gate electrodes
#1299Thin-film deposition apparatus
#1300Film forming apparatus
#1301Method for forming tungsten nitride film
#1302Precoat film forming method
#1303Method of processing a workpiece
#1304Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
#1305Precursor compounds for deposition of ceramic and metal films and preparation methods thereof
#1306Method for novel deposition of high-k MSiON dielectric films
#1307Method and apparatus of generating PDMAT precursor
#1308Methods of fabricating interconnects for semiconductor components including plating solder-wetting material and solder filling
#1309Methods of fabricating interconnects for semiconductor components including a through hole entirely through the component and forming a metal nitride including separate precursor cycles
#1310Methods of fabricating interconnects including depositing a first material in the interconnect with a thickness of angstroms and a low temperature for semiconductor components
#1311Thin films
#1312Cyclical deposition of tungsten nitride for metal oxide gate electrode
#1313Gas delivery apparatus for atomic layer deposition
#1314Radical processing of a sub-nanometer insulation film
#1315High-k dielectric materials and processes for manufacturing them
#1316Formation of a tantalum-nitride layer
#1317Surface-coated cermet cutting tool with hard coating layer having excellent chipping resistance
#1318Preheating of chemical vapor deposition precursors
#1319Semiconductor device and manufacturing method thereof
#1320Integration of barrier layer and seed layer
#1321Film-formation method for semiconductor process
#1322Method of cleaning surface of semiconductor substrate, method of manufacturing thin film, method of manufacturing semiconductor device, and semiconductor device
#1323Method to form a robust TiCI4 based CVD TiN film
#1324Method for depositing nanolaminate thin films on sensitive surfaces
#1325Integration of ALD tantalum nitride for copper metallization
#1326CVD tantalum compounds for FET get electrodes
#1327Atomic layer deposition process and apparatus
#1328Precoat film forming method, idling method of film forming device, loading table structure, film forming device and film forming method
#1329Plasma enhanced ALD of tantalum nitride and bilayer
#1330Method for depositing metallic nitride series thin film
#1331Method and structure for selective surface passivation
#1332Tantalum amide complexes for depositing tantalum-containing films, and method of making same
#1333System and method for forming multi-component dielectric films
#1334Production of elemental films using a boron-containing reducing agent
#1335Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
#1336Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same
#1337Method for forming a titanium nitride layer
#1338Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing
#1339Atomic layer deposition methods of forming conductive metal nitride comprising layers
#1340Atomic layer deposition method
#1341Systems and methods of forming refractory metal nitride layers using disilazanes
#1342Nanostructured coatings and related methods
#1343Systems and methods of forming refractory metal nitride layers using disilazanes
#1344Chemistry for chemical vapor deposition of titanium containing films
#1345Method of forming an oxidation-resistant TiSiN film
#1346Substrate temperature control in an ALD reactor
#1347Controlling the temperature of a substrate in a film deposition apparatus
#1348Work piece with a hard film of AlCr-containing material, and process for its production
#1349Temperature control system in an ALD chamber
#1350Method of modifying source chemicals in an ALD process
#1351Integrated low k recovery and ALD metal deposition process for advanced technology node
#1352Cutting tool
#1353Cutting tool
#1354Methods for improved biocompatibility for human implanted medical devices
#1355Selective titanium nitride deposition using oxides of lanthanum masks
#1356Method of depositing an inorganic film on an organic polymer