121156 ⎘
Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing Solid phase epitaxial growth through a disordered intermediate layer
PATTERNED ALUMINUM NITRIDE COMPOSITE SUBSTRATE AND PREPARATION METHOD THEREOF
#2SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS
#3Ferroelectric thin film and forming method thereof
#4Monolayer graphene on non-polar face SiC substrate and control method thereof
#5Method for fabricating a crystalline metal-phosphide hetero-layer by converting first and second crystalline metal-source layers into first and second crystalline metal phosphide layers
#6Method of growing crystal in recess and processing apparatus used therefor
#7Method for producing a plate-like alumina power
#8Process for forming graphene layers on silicon carbide
#9Film forming method and film forming apparatus
#10METHODS OF FORMING PEROVSKITE FILMS
#11Process for preparing an epitaxial alpha-quartz layer on a solid support, material obtained and uses thereof
#12Method, system, and apparatus for doping and for multi-chamber high-throughput solid-phase epitaxy deposition process
#13Silicon composite substrates