C30B - CPC Classification

• C30B1/00 » Single-crystal growth from solids or gels 42
• C30B1/00 » Single-crystal growth from solids or gels 42
• C30B1/00 » Single-crystal growth directly from the solid state 42
• C30B1/00 » Single-crystal growth directly from the solid state 42
• C30B11/00 » Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method 376
• C30B13/00 » Single-crystal growth by zone-melting; Refining by zone-melting 99
• C30B15/00 » Single-crystal growth by pulling from a melt, e.g. Czochralski method 383
• C30B17/00 » Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method 102
• C30B19/00 » Liquid-phase epitaxial-layer growth 66
• C30B21/00 » Unidirectional solidification of eutectic materials 5
• C30B23/00 » Single-crystal growth from vapours 300
• C30B23/00 » Single-crystal growth from vapours 300
• C30B23/00 » Single-crystal growth by condensing evaporated or sublimed material 300
• C30B23/00 » Single-crystal growth by condensing evaporated or sublimed material 300
• C30B25/00 » Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth 255
• C30B27/00 » Single-crystal growth under a protective fluid 11
• C30B28/00 » Production of homogeneous polycrystalline material with defined structure 11
• C30B29/00 » Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape 26
• C30B3/00 » Unidirectional demixing of eutectoid materials 4
• C30B30/00 » Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions 39
• C30B31/00 » After-treatment of single crystals or homogeneous polycrystalline material with defined structure 19
• C30B31/00 » After-treatment of single crystals or homogeneous polycrystalline material with defined structure 19
• C30B31/00 » Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor 19
• C30B31/00 » Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor 19
• C30B33/00 » After-treatment of single crystals or homogeneous polycrystalline material with defined structure 573
• C30B35/00 » Apparatus in general, specially adapted for the growth, production or after-treatment of single crystals or a homogeneous polycrystalline material with defined structure 379
• C30B5/00 » Single-crystal growth from gels 61
• C30B7/00 » Single-crystal growth from liquids; Unidirectional solidification of eutectic materials 464
• C30B7/00 » Single-crystal growth from liquids; Unidirectional solidification of eutectic materials 464
• C30B7/00 » Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions 464
• C30B7/00 » Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions 464
• C30B9/00 » Single-crystal growth from melt solutions using molten solvents 127