ClassID:

121209

C30B13/10 - CPC Classification

Classification description:

Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it to the molten zone with addition of doping materials

Sub-classes:
Recent Application in this class:
#1
20250283245
2025-09-11

TRANSPARENT HORIZONTAL GRADIENT FREEZE APPARATUS WITH REGULATED GROWTH RATE

#2
20210222320
2021-07-22

Method of Producing a Single-Crystal

#3
20190062942
2019-02-28

GA2O3-based single crystal substrate, and production method therefor

#4
20190032242
2019-01-31

Single-Crystal Production Equipment

#5
20180245236
2018-08-30

Method for tailoring the dopant profile in a laser crystal using zone processing

#6
20170037534
2017-02-09

DIRECT CONVERSION OF H-BN INTO C-BN AND STRUCTURES FOR A VARIETY OF APPLICATIONS

#7
20170037533
2017-02-09

Synthesis and processing of novel phase of boron nitride (Q-BN)

#8
20170037532
2017-02-09

Conversion of carbon into n-type and p-type doped diamond and structures

#9
20170037531
2017-02-09

DIRECT CONVERSION OF CARBON INTO DIAMOND AND STRUCTURES FOR A VARIETY OF APPLICATIONS

#10
20170037530
2017-02-09

Synthesis and processing of Q-carbon, graphene, and diamond

#11
20170036912
2017-02-09

Synthesis and processing of novel phase of carbon (Q-carbon)

#12
20160017512
2016-01-21

Ga2O3-based single crystal substrate, and production method therefor

#13
20160002819
2016-01-07

METHOD FOR PREPARING SOLAR GRADE SILICON SINGLE CRYSTAL USING CZOCHRALSKI ZONE MELTING METHOD

#14
20150284873
2015-10-08

METHODS OF FORMING AND ANALYZING DOPED SILICON

#15
20150101526
2015-04-16

Method for tailoring the dopant profile in a laser crystal using zone processing

#16
20150028268
2015-01-29

Method for manufacturing highly pure silicon, highly pure silicon obtained by this method, and silicon raw material for manufacturing highly pure silicon

#17
20150020729
2015-01-22

GERMANIUM ENRICHED SILICON MATERIAL FOR MAKING SOLAR CELLS

#18
20140097349
2014-04-10

Stabilized thallium bromide radiation detectors and methods of making the same

#19
20140072010
2014-03-13

Ti: sapphire crystal fiber, manufacturing method thereof, and wide band light source using the same

#20
20140060421
2014-03-06

Method for producing a silicon single crystal

#21
20140060420
2014-03-06

Method of manufacturing a Ti:sapphire crystal fiber by laser-heated pedestal growth

#22
20130044779
2013-02-21

METHOD FOR TAILORING THE DOPANT PROFILE IN A LASER CRYSTAL USING ZONE PROCESSING

#23
20120051082
2012-03-01

Ti: sapphire crystal fiber, manufacturing method thereof, and wide band light source using the same

#24
20110126758
2011-06-02

Germanium enriched silicon material for making solar cells

#25
20100171232
2010-07-08

METHOD FOR SEMICONDUCTOR SOLIDIFICATION WITH THE ADDITION OF DOPED SEMICONDUCTOR CHARGES DURING CRYSTALLISATION

#26
20100158783
2010-06-24

Process and apparatus for producing a single crystal of semiconductor material

#27
20090308455
2009-12-17

Germanium-enriched silicon material for making solar cells

#28
20090084669
2009-04-02

Process and apparatus for producing a single crystal of semiconductor material

#29
20090050050
2009-02-26

Deep-eutectic melt growth of nitride crystals

#30
20080029019
2008-02-07

Method For Producing Directionally Solidified Silicon Ingots