121237 ⎘
Single-crystal growth by pulling from a melt, e.g. Czochralski method; Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON AND PROCESS FOR THE PRODUCTION THEREOF
#2EPITAXIAL SILICON WAFER AND METHOD FOR PRODUCING THE SAME
#3PROCESS FOR MANUFACTURING A MONOCRYSTALLINE SILICON SEMICONDUCTOR WAFER, AND MONOCRYSTALLINE SILICON SEMICONDUCTOR WAFER
#4METHOD OF PRODUCING AN EPITAXIALLY COATED SEMICONDUCTOR WAFER OF MONOCRYSTALLINE SILICON
#5Crystal Puller and Method for Pulling Single-Crystal Silicon Ingot, and Single-Crystal Silicon Ingot
#6Method and Apparatus for Single Crystal Growth, and Single Crystal
#7METHODS FOR PRODUCING SINGLE CRYSTAL SILICON WAFERS FOR INSULATED GATE BIPOLAR TRANSISTORS
#8VACANCY-RICH SILICON FOR USE WITH A GALLIUM NITRIDE EPITAXIAL LAYER
#9NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TREATED WAFER FORMED THEREFROM HAVING RADIALLY UNIFORMLY DISTRIBUTED OXYGEN PRECIPITATION DENSITY AND SIZE
#10Silicon wafer and manufacturing method of the same
#11SILICON WAFER AND METHOD FOR PRODUCING SILICON WAFER
#12SEMICONDUCTOR WAFER MADE OF SINGLE-CRYSTAL SILICON AND PROCESS FOR THE PRODUCTION THEREOF
#13METHOD OF DETECTING CRYSTALLOGRAPHIC DEFECTS AND METHOD OF GROWING AN INGOT
#14Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer
#15PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY LENGTH
#16Methods for forming a silicon substrate with reduced grown-in nuclei for epitaxial defects and methods for forming an epitaxial wafer
#17Method for pulling a cylindrical crystal from a melt
#18Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
#19Single crystal silicon ingot having axial uniformity
#20Mono-crystalline silicon growth apparatus
#21Silicon wafer and manufacturing method of the same
#22PROCESS FOR PREPARING INGOT HAVING REDUCED DISTORTION AT LATE BODY LENGTH
#23Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
#24Method for controlling convection pattern of silicon melt and method for producing monocrystalline silicon
#25Compound semiconductor and method for producing single crystal of compound semiconductor
#26Evaluation method of metal contamination
#27Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
#28Single crystal silicon ingot having axial uniformity
#29Process for preparing ingot having reduced distortion at late body length
#30Single crystal of silicon with <100> orientation, which is doped with n-type dopant, and method for producing such a single crystal
#31Mono-crystalline silicon growth method
#32Semiconductor wafer made of single-crystal silicon and process for the production thereof
#33METHOD, DEVICE, SYSTEM, AND COMPUTER STORAGE MEDIUM FOR CRYSTAL GROWING CONTROL
#34Method for producing silicon single crystal, heat shield, and single crystal pulling device
#35Epitaxial silicon wafer
#36Ingot growth control device and control method thereof
#37Method for pulling a single crystal composed of semiconductor material from a melt contained in a crucible
#38Method of fabricating a turbine engine part
#39Method for producing a semiconductor wafer of monocrystalline silicon, device for producing a semiconductor wafer of monocrystalline silicon and semiconductor wafer of monocrystalline
#40Semiconductor wafer made of monocrystalline silicon, and method for producing same
#41Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
#42Nitrogen Doped and Vacancy Dominated Silicon Ingot and Thermally Treated Wafer Formed Therefrom Having Radially Uniformly Distributed Oxygen Precipitation Density and Size
#43EPITAXIAL SILICON WAFER
#44Lead oxychloride, infrared nonlinear optical crystal, and preparation method thereof
#45Silicon epitaxial wafer and method of producing same
#46Indium phosphide wafer, photoelectric conversion element, and method for producing a monocrystalline indium phosphide
#47Method for manufacturing silicon single crystal ingot, and silicon single crystal ingot manufactured by the method
#48Method for producing a silicon single crystal doped with red phosphorous with reduced number of stacking faults and method for producing a silicon wafer using the same
#49Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof
#50Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof
#51APPARATUS FOR FORMING SINGLE CRYSTAL SAPPHIRE
#52Silicon single crystal growing apparatus and silocon single crystal growing method using same
#53METHOD FOR FORMING MONOCRYSTALLINE SILICON INGOT AND WAFER
#54Silicon single crystal manufacturing method
#55Epitaxial silicon wafer and method for producing the epitaxial silicon wafer
#56Apparatus for producing silicon single crystal
#57Silicon wafer and method for manufacturing the same
#58Silicon single crystal wafer, manufacturing method thereof and method of detecting defects
#59Method for manufacturing silicon single crystal
#60Method for producing SiC single crystal
#61Indium phosphide wafer, photoelectric conversion element, and method for producing a monocrystalline indium phosphide
#62Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
#63SYSTEM AND METHOD FOR FORMING A SILICON WAFER
#64Method of producing silicon single crystal ingot
#65Method for manufacturing a defect-controlled low-oxygen concentration silicon single crystal wafer
#66SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURE THEREOF
#67Silicon single crystal wafer, manufacturing method thereof and method of detecting defects
#68Silicon wafer and method for producing the same
#69Semiconductor wafer composed of monocrystalline silicon and method for producing it
#70METHOD OF FORMING AN R-PLANE SAPPHIRE CRYSTAL
#71Semiconductor structure and method
#72Method of manufacturing annealed wafer
#73Silicon single crystal manufacturing apparatus and silicon single crystal manufacturing method
#74Method and an apparatus for growing a silicon single crystal from a melt
#75Method For Producing Semiconductor Wafers Composed Of Silicon Having A Diameter Of At Least 450 mm, and Semiconductor Wafer Composed Of Silicon Having A Diameter of 450 mm
#76METHODS FOR PRODUCING SINGLE CRYSTAL SILICON INGOTS WITH REDUCED INCIDENCE OF DISLOCATIONS
#77Procedure for in-situ determination of thermal gradients at the crystal growth front
#78Semiconductor wafers of silicon and method for their production
#79METHOD FOR MANUFACTURING A SILICON WAFER
#80Method for manufacturing a silicon wafer
#81Method for producing semiconductor wafers composed of silicon having a diameter of at least 450 mm, and semiconductor wafer composed of silicon having a diameter of 450 mm
#82Silicon wafer and method for producing the same
#83Process for production of silicon single crystal, and highly doped N-type semiconductor substrate
#84Method and an apparatus for growing a silicon single crystal from a melt
#85Method for manufacturing silicon single crystal in which a crystallization temperature gradient is controlled
#86Process for production of silicon single crystal
#87Semiconductor wafer composed of monocrystalline silicon and method for producing it
#88SILICON WAFER AND METHOD FOR PRODUCING THE SAME
#89Silicon wafer and method for producing the same
#90Method and Apparatus of Growing Silicon Single Crystal and Silicon Wafer Fabricated Thereby
#91System for Manufacturing Silicon Single Crystal and Method for Manufacturing Silicon Single Crystal Using this System
#92Procedure for in-situ determination of thermal gradients at the crystal growth front
#93Reversed action diameter control in a semiconductor crystal growth system
#94Method of producing single crystal
#95Method for growing silicon single crystal, and silicon wafer
#96Apparatus and method for producing single crystals
#97METHOD FOR PRODUCING Si SINGLE CRYSTAL INGOT BY CZ METHOD
#98R-Plane Sapphire Method and Apparatus
#99Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot
#100Silicon single crystal producing method, annealed wafer, and method of producing annealed wafer
#101SINGLE CRYSTAL SILICON HAVING IMPROVED GATE OXIDE INTEGRITY
#102Method for Manufacturing Silicon Single Crystal Wafer
#103Method For Manufacturing Silicon Single Crystal Wafer
#104Silicon wafer having good intrinsic getterability and method for its production
#105Method of Evaluating Quality of Silicon Single Crystal
#106Silicon single crystal wafer for particle monitor
#107Semiconductor wafers of silicon and method for their production
#108Method for producing single crystal and a method for producing annealed wafer
#109Method and device for producing semiconductor wafers of silicon
#110Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby
#111Method and Apparatus of Growing Silicon Single Crystal and Silicon Wafer Fabricated Thereby
#112SILICON ON INSULATOR STRUCTURE WITH A SINGLE CRYSTAL CZ SILICON DEVICE LAYER HAVING A REGION WHICH IS FREE OF AGGLOMERATED INTRINSIC POINT DEFECTS
#113Silicon material with controlled agglomerated point defects and oxygen clusters induced by the lateral surface
#114Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growth
#115Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
#116Process for forming low defect density, ideal oxygen precipitating silicon
#117Nitrogen-doped silicon substantially free of oxidation induced stacking faults
#118Silicon wafer, method for manufacturing the same and method for growing silicon single crystals
#119Annealed wafer and manufacturing method of annealed wafer
#120Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby
#121Method of manufacturing silicon wafer
#122Method for growing silicon single crystal and silicon wafer
#123Process for growing silicon single crystal and process for producing silicon wafer
#124Method for producing a single crystal and a single crystal
#125Method for producing a single crystal
#126Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions
#127Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties
#128Silicon wafer, method for producing silicon wafer and method for growing silicon single crystal
#129Silicon single crystal, and process for producing it
#130Method for manufacturing silicon single crystal, and silicon wafer
#131Method for producing single crystal and single crystal
#132Silicon wafer, SOI substrate, method for growing silicon single crystal, method for manufacturing silicon wafer, and method for manufacturing SOI substrate
#133Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
#134Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby
#135Method for producing a single crystal and a single crystal
#136Method of producing silicon monocrystal
#137Heat shielding member of silicon single crystal pulling system
#138Soi wafer and a method for producing the same
#139Soi wafer and a method for producing the same
#140Method of producing P-doped silicon single crystal and P-doped N-type silicon single crystal wafer
#141Silicon wafer, its manufacturing method, and its manufacturing apparatus
#142Method for producing silicon wafer
#143Method of manufacturing silicon single crystal and silicon single crystal manufactured by the method
#144Silicon single crystal wafer, an epitaxial wafer and a method for producing a silicon single crystal
#145Vacancy-dominated, defect-free silicon
#146Silicon wafer for epitaxial growth, an epitaxial wafer, and a method for producing it
#147Low defect density silicon
#148Low defect density, ideal oxygen precipitating silicon
#149Process for preparing single crystal silicon having improved gate oxide integrity
#150Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
#151Method for the production of low defect density silicon
#152Process for implementing oxygen into a silicon wafer having a region which is free of agglomerated intrinsic point defects
#153Silicon single crystal wafer fabricating method and silicon single crystal wafer