INGOT PULLER APPARATUS INCLUDING COOLING JACKET WITH VARYING SURFACE EMISSIVITY FOR CONTROLLED INGOT COOLING PROFILES

INGOT PULLER APPARATUS INCLUDING MOVEABLE COOLING JACKET FOR CONTROLLED INGOT COOLING PROFILES

METHODS AND SYSTEMS FOR CONTROLLING CRYSTAL GROWTH

DUAL REFRIGERATION SYSTEMS FOR A MONO-CRYSTAL FURNACE AND METHODS FOR PULLING A MONO-CRYSTAL

METHODS OF PREPARING SILICON-ON-INSULATOR STRUCTURES USING EPITAXIAL WAFERS

AUTOMATIC DECISION-MAKING FOR PULLING

ASYMMETRIC THERMAL FIELDS FOR EXCLUDING IMPURITIES IN SINGLE CRYSTAL MANUFACTURING DEVICE

SINGLE-CRYSTAL SILICON CARBIDE WAFER, SINGLE-CRYSTAL SILICON CARBIDE INGOT, AND METHOD FOR PRODUCING SINGLE-CRYSTAL SILICON CARBIDE

METHOD, APPARATUS, SYSTEM AND COMPUTER STORAGE MEDIUM OF CONTROLLING CRYSTAL GROWTH

SYSTEMS AND METHODS FOR COOLING A CHUNK POLYCRYSTALLINE FEEDER

VACANCY-RICH SILICON FOR USE WITH A GALLIUM NITRIDE EPITAXIAL LAYER

SEMI-INSULATING GALLIUM ARSENIDE SINGLE CRYSTAL, PREPARATION METHOD AND GROWTH DEVICE THEREFOR

Indium phosphide substrate, semiconductor epitaxial wafer, method for producing indium phosphide single-crystal ingot and method for producing indium phosphide substrate

NITROGEN DOPED AND VACANCY DOMINATED SILICON INGOT AND THERMALLY TREATED WAFER FORMED THEREFROM HAVING RADIALLY UNIFORMLY DISTRIBUTED OXYGEN PRECIPITATION DENSITY AND SIZE

INGOT GROWING APPARATUS AND METHOD THEREOF

Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability

Method and System for Controlling Temperature during Crystal Growth

Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturability

Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer

CRYSTAL GROWTH METHOD AND CRYSTAL GROWTH APPARATUS

CRYSTAL PULLING SYSTEM AND METHODS FOR PRODUCING MONOCRYSTALLINE INGOTS WITH REDUCED EDGE BAND DEFECTS

Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size

Method for manufacturing ingot block, method for manufacturing semiconductor wafer, and device for manufacturing ingot block

Method for validating the thermal history of a semiconductor ingot

Method for controlling convection pattern of silicon melt, method for producing silicon single crystals, and device for pulling silicon single crystals

Single crystal of silicon with <100> orientation, which is doped with n-type dopant, and method for producing such a single crystal

N-type silicon single crystal production method, n-type silicon single crystal ingot, silicon wafer, and epitaxial silicon wafer

Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer

Method and apparatus for manufacturing silicon single crystal

Temperature control device for single crystal ingot growth and temperature control method applied thereto

Single crystal silicon plate-shaped body

Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects

Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size

Epitaxial silicon wafer

Method for producing a silicon single crystal doped with red phosphorous with reduced number of stacking faults and method for producing a silicon wafer using the same

SYSTEM FOR MEASURING MATERIAL THICKNESSES AT HIGH TEMPERATURES

C-PLANE SAPPHIRE METHOD AND APPARATUS

Crystal pulling system and method for inhibiting precipitate build-up in exhaust flow path

Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects

Method for growing a silicon single crystal while suppressing a generation of slip dislocations in a tail portion

Method for growing a silicon crystal substrate from a melt by directing a flow of molten silicon around a baffle structure

Manufacturing method of silicon monocrystal

Method for manufacturing silicon single crystal

Silicon single crystal pulling apparatus comprising a vertically movable supporting member holding the heater and shield

Silicon single crystal growing device and method of growing the same

Method for producing single crystal, and method for producing silicon wafer

Epitaxial silicon wafer and method for manufacturing same

Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size

Crystal growing systems and methods including a passive heater

Cooling rate control apparatus and ingot growing apparatus including same

Method for growing silicon single crystal

Method for growing silicon carbide crystal

Method for growing silicon carbide crystal

Method for producing SiC single crystal

Silicon wafer and method for manufacturing the same

Silicon single crystal wafer, manufacturing method thereof and method of detecting defects

C-Plane Sapphire Method

Semiconductor structure and method

Method and an apparatus for growing a silicon single crystal from a melt

Silicon single crystal substrate and method of manufacturing the same

Thermal load leveling during silicon crystal growth from a melt using anisotropic materials

METHOD FOR FORMING BULK CRYSTALS, IN PARTICULAR MONOCRYSTALS OF FLUORIDES DOPED WITH RARE-EARTH IONS

METHOD OF MANUFACTURING SINGLE CRYSTAL INGOT AND WAFER MANUFACTURED BY THEREBY

SINGLE CRYSTAL COOLER AND SINGLE CRYSTAL GROWER INCLUDING THE SAME

Epitaxial wafer and production method thereof

Single-crystal manufacturing apparatus and single-crystal manufacturing method

Method and an apparatus for growing a silicon single crystal from a melt

SILICON SINGLE CRYSTAL AND METHOD FOR GROWING THEREOF, AND SILICON WAFER AND METHOD FOR MANUFACTURING THEREOF

SILICON WAFER AND METHOD FOR PRODUCING THE SAME

Silicon wafer and method for producing the same

Method for producing silicon wafer

Single crystal pulling apparatus

Method for predicting precipitation behavior of oxygen in silicon single crystal, method for determining production parameter of silicon single crystal, and storage medium for storing program for predicting precipitation behavior of oxygen in silicon single crystal

Apparatus for pulling single crystal by CZ method

Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot

Device and process for growing Ga-doped single silicon crystals suitable for making solar cells

Silicon single crystal producing method, annealed wafer, and method of producing annealed wafer

SINGLE CRYSTAL SILICON HAVING IMPROVED GATE OXIDE INTEGRITY

Apparatus for pulling single crystal by CZ method

Apparatus for pulling single crystal by CZ method

SILICON SINGLE CRYSTAL WAFER AND THE PRODUCTION METHOD

Method for manufacturing epitaxial wafer

Silicon wafer for semiconductor and manufacturing method thereof

C-plane sapphire method and apparatus

SILICON ON INSULATOR STRUCTURE WITH A SINGLE CRYSTAL CZ SILICON DEVICE LAYER HAVING A REGION WHICH IS FREE OF AGGLOMERATED INTRINSIC POINT DEFECTS

Silicon material with controlled agglomerated point defects and oxygen clusters induced by the lateral surface

Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growth

Apparatus for pulling single crystal by CZ method

Process for forming low defect density, ideal oxygen precipitating silicon

Nitrogen-doped silicon substantially free of oxidation induced stacking faults

Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributions

Method for producing a single crystal

Silicon single crystal, and process for producing it

Method of simulation with respect to density distribution and size distribution of void defect within single crystal and oxygen precipitation nucleus within single crystal

Silicon wafer, its manufacturing method, and its manufacturing apparatus

Apparatus for pulling single crystal by CZ method

Vacancy-dominated, defect-free silicon

Silicon wafer for epitaxial growth, an epitaxial wafer, and a method for producing it

Low defect density silicon

Low defect density, ideal oxygen precipitating silicon

Process for preparing single crystal silicon having improved gate oxide integrity

Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults

Method for the production of low defect density silicon

Process for implementing oxygen into a silicon wafer having a region which is free of agglomerated intrinsic point defects

Asymmetric thermal fields for excluding impurities in single crystal manufacturing device