121287 ⎘
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth; Epitaxial-layer growth Reaction chambers; Selection of materials therefor
SEMICONDUCTOR PROCESSING SYSTEMS INCLUDING PROCESS MODULES AND GAS DELIVERY ASSEMBLIES CONFIGURED FOR PERFORMING CONCURRENT EPITAXIAL DEPOSITION OF MATERIAL LAYERS
#2PROCESS MODULES CONFIGURED FOR PERFORMING CONCURRENT EPITAXIAL DEPOSITION OF MATERIAL LAYERS AND SEMICONDUCTOR PROCESSING SYSTEMS INCLUDING SUCH PROCESS MODULES
#3PROCESS MODULES INCLUDING INDEPENDENTLY OPERABLE LIFT MECHANISMS AND SEMICONDUCTOR PROCESSING SYSTEMS INCLUDING SUCH PROCESS MODULES
#4VENTED SEMICONDUCTOR PROCESSING CHAMBER
#5PLASMA GENERATOR AND INJECTOR ASSEMBLY FOR LAYER INSERTION, AND RELATED METHODS, PROCESSING CHAMBERS, AND SYSTEMS
#6SUBSTRATE PROCESSING APPARATUS
#7FLOW GUIDE ARRANGEMENTS FOR GAS ACTIVATION AND GAS DISTRIBUTION, AND RELATED CHAMBER KITS, METHODS, AND PROCESSING CHAMBERS
#8CHAMBER AND METHOD FOR CONTROLLING FILM DEFECTS AT AN EDGE AREA OF A SUBSTRATE
#9APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL
#10REACTION APPARATUS AND METHODS FOR DEPOSITING AN EPITAXIAL LAYER ON A SEMICONDUCTOR STRUCTURE WITH SIDE INJECTION
#11SEMICONDUCTOR CRYSTAL MANUFACTURING APPARATUS
#12REACTION CHAMBER ASSEMBLY
#13MATERIAL DEPOSITION APPARATUS AND RELATED METHOD
#14ENVELOPE AND ISOLATION PLATE FOR IR TRANSMISSION ADJUSTMENT
#15METHOD AND SYSTEM FOR MANUFACTURING A GERMANIUM-BASED MEMBRANE, AND GERMANIUM-BASED SUBSTRATE
#16CHAMBER LINERS AND CHAMBER KITS TO REDUCE EDGE ROLL OFF FOR PROCESSING CHAMBERS
#17MONCRYSTALLINE COATINGS FOR REACTOR PARTS SUITABLE FOR THE EPITAXIAL DEPOSITION OF SEMICONDUCTOR FILMS
#18LOW TEMPERATURE ATMOSPHERIC EPITAXIAL PROCESS
#19LINERS HAVING FLOW OPENINGS, AND RELATED CHAMBER KITS, PROCESSING CHAMBERS, AND METHODS FOR SEMICONDUCTOR MANUFACTURING
#20VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD
#21REACTOR CASING ASSEMBLY
#22REACTOR CASING ASSEMBLY
#23REACTOR WITH REMOVABLE REACTION UNIT
#24LOW TEMPERATURE EPI CHAMBER
#25FAST COOLING OF REACTOR FROM HIGH TEMPERATURES
#26TWO-CHAMBER REACTOR FOR EPITAXIAL DEPOSITION OF SEMICONDUCTOR MATERIAL ON SUBSTRATES
#27APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS WITH SELECTIVE EPITAXIAL DEPOSITION
#28SEMICONDUCTOR PROCESSING CHAMBER, SEMICONDUCTOR PROCESSING EQUIPMENT AND VAPOR EPITAXY EQUIPMENT
#29CEILING PLATE AND EPITAXIAL GROWTH DEVICE HAVING THE SAME
#30ANGULAR SPEED MEASUREMENT SYSTEM FOR SUBSTRATES USED IN EPITAXIAL DEPOSITION REACTORS
#31MULTI-LAYER EPI CHAMBER BODY
#32METHOD FOR PREPARING GALLIUM NITRIDE (GAN) SINGLE-CRYSTAL SUBSTRATE WITH EDGE METAL MASK TECHNOLOGY
#33GAS-PHASE REACTOR SYSTEM-WITH A REACTION CHAMBER, A SOLID PRECURSOR SOURCE VESSEL, A GAS DISTRIBUTION SYSTEM, AND A FLANGE ASSEMBLY
#34GROUP III NITRIDE CRYSTAL MANUFACTURING APPARATUS AND MANUFACTURING METHOD
#35APPARATUS, SYSTEMS, AND METHODS OF USING ATOMIC HYDROGEN RADICALS WITH SELECTIVE EPITAXIAL DEPOSITION
#36REACTOR FOR EPITAXIAL DEPOSITION OF SEMICONDUCTOR MATERIAL ON SUBSTRATES WITH SLIDING SLEDGE FOR REACTION CHAMBER
#37GALLIUM OXIDE FILM, AND MANUFACTURING DEVICE AND MANUFACTURING METHOD FOR SAME
#38PROCESS FOR PRODUCING COATED SUBSTRATES AND COATED SUBSTRATE AND USE THEREOF
#39REACTION CHAMBER AND SEMICONDUCTOR EQUIPMENT
#40MULTI-THERMAL CVD CHAMBERS WITH SHARED GAS DELIVERY AND EXHAUST SYSTEM
#41MANUFACTURING DEVICE AND MANUFACTURING METHOD FOR GROUP III NITRIDE CRYSTAL
#42PREPARATION OF SHAPED CRYSTALLINE LAYERS
#43PROCESSING SYSTEMS, CHAMBERS, AND RELATED METHODS INCLUDING TURBINES FOR ENERGY HARNESSING
#44PROCESSING SYSTEMS, CHAMBERS, AND RELATED METHODS INCLUDING THERMOELECTRIC GENERATORS FOR ENERGY HARNESSING
#45HIGHLY REFLECTIVE METALLIC ALLOYS FOR COMPONENTS OF SEMICONDUCTOR PROCESSING EQUIPMENT, AND RELATED METHODS
#46DIAMOND SUBSTRATE AND METHOD FOR MANUFACTURING SAME
#47REACTION CHAMBER WITH COVERING SYSTEM AND EPITAXIAL REACTOR
#48CELL ARCHITECTURAL STRUCTURES FOR ENHANCED THERMAL MANAGEMENT IN EPITAXIAL GROWTH PROCESSING CHAMBER
#49PRE-HEAT RINGS AND PROCESSING CHAMBERS INCLUDING BLACK QUARTZ, AND RELATED METHODS
#50CHAMBER ARCHITECTURE FOR EPITAXIAL DEPOSITION AND ADVANCED EPITAXIAL FILM APPLICATIONS
#51LARGE-SIZE DIAMOND, MPCVD DEVICE AND PREPARATION METHOD OF LARGE-SIZE DIAMOND
#52METHOD OF PRODUCING EPITAXIAL LAYER WAFERS IN A CHAMBER OF A DEPOSITION REACTOR
#53GROUP III-V SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION OF SAME INCLUDING IN-SITU SURFACE PASSIVATION
#54CHEMICAL VAPOR DEPOSITION REACTOR IN POLYSILICON PRODUCTION PROCESS
#55Method and Device for Producing a SiC Solid Material
#56Method and Device for Producing a SiC Solid Material
#57FLOW GUIDE STRUCTURES AND HEAT SHIELD STRUCTURES, AND RELATED METHODS, FOR DEPOSITION UNIFORMITY AND PROCESS ADJUSTABILITY
#58Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
#59VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD
#60METHOD FOR CVD DEPOSITION OF N-TYPE DOPED SILICON CARBIDE AND EPITAXIAL REACTOR
#61Apparatus for growing a semiconductor wafer and associated manufacturing process
#62APPARATUS AND METHOD FOR DEPOSITING A LAYER OF SEMICONDUCTOR MATERIAL ON A SUBSTRATE WAFER
#63Apparatus and method for manufacturing hexagonal crystals
#64Apparatus for heating multiple crucibles
#65WAFER EDGE TEMPERATURE CORRECTION IN BATCH THERMAL PROCESS CHAMBER
#66Substrate lift mechanism and reactor including same
#67Gallium nitride vapor phase epitaxy apparatus used in vapor phase epitaxy not using organic metal as a gallium raw material and manufacturing method therefor
#68Reaction chamber
#69Substrate support device for a reaction chamber of an epitaxial reactor with gas flow rotation, reaction chamber and epitaxial reactor
#70Chamber architecture for epitaxial deposition and advanced epitaxial film applications
#71EPITAXIAL DEVICE AND GAS INTAKE STRUCTURE FOR EPITAXIAL DEVICE
#72GROWTH OF A-B CRYSTALS WITHOUT CRYSTAL LATTICE CURVATURE
#73Epitaxial growth apparatus and method of producing epitaxial wafer
#74Multi-layer EPI chamber body
#75REACTION CHAMBER FOR A DEPOSITION REACTOR WITH INTERSPACE AND LOWER CLOSING ELEMENT AND REACTOR
#76CVD REACTOR CHAMBER WITH RESISTIVE HEATING FOR SILICON CARBIDE DEPOSITION
#77Method for making transition metal dichalcogenide crystal
#78Semiconductor deposition monitoring device
#79Multi-thermal CVD chambers with shared gas delivery and exhaust system
#80WAFER, EPITAXIAL WAFER, METHOD FOR MANUFACTURING A WAFER AND METHOD FOR MANUFACTURING AN EPITAXIAL WAFER
#81Methods for forming large area single crystal diamond substrates with high crystallographic alignment
#82GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF
#83Linear lamp array for improved thermal uniformity and profile control
#84Vapor phase epitaxy method
#85Tantalum carbide coated carbon material, manufacturing method thereof, and member for apparatus for manufacturing semiconductor single crystal
#86Modular reactor for microwave plasma-assisted deposition
#87Apparatus for growing a semiconductor wafer and associated manufacturing process
#88System for horizontal growth of high-quality semiconductor single crystals by physical vapor transport
#89Apparatus and methods for alignment of a susceptor
#90NITROGEN-ENABLED HIGH GROWTH RATES IN HYDRIDE VAPOR PHASE EPITAXY
#91Substrate lift mechanism and reactor including same
#92METHOD OF PRODUCING PARTICLE-SHAPED DIAMOND SINGLE-CRYSTAL USING CHEMICAL VAPOR DEPOSITION
#93Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
#94Growth of A-B crystals without crystal lattice curvature
#95Vapor phase growth method
#96Purged viewport for quartz dome in epitaxy reactor
#97REACTOR AND METHOD FOR PRODUCTION OF SILICON
#98Crystal growth apparatus
#99Vapor-liquid reaction device, reaction tube, film forming apparatus
#100Liner for processing chamber
#101Epitaxial deposition reactor with reflector external to the reaction chamber and cooling method of a susceptor and substrates
#102Group-III nitride substrate containing carbon at a surface region thereof
#103Heat-insulating shield member and single crystal manufacturing apparatus having the same
#104Group III nitride crystal substrate having a diameter of 4 inches or more and a curved c-plane with a radius of curvature of 15 m or more
#105Method of utilizing a degassing chamber to reduce arsenic outgassing following deposition of arsenic-containing material on a substrate
#106Lower side wall for epitaxtail growth apparatus
#107Method and apparatus for surface preparation prior to epitaxial deposition
#108Substrate lift mechanism and reactor including same
#109Method to improve MOCVD reaction process by forming protective film
#110Single-crystal diamond, method for manufacturing single-crystal diamond, and chemical vapor deposition device used in same
#111Method for epitaxially coating semiconductor wafers, and semiconductor wafer
#112Gallium nitride crystal, its manufacturing method, and crystal growth apparatus
#113Alkyl push flow for vertical flow rotating disk reactors
#114Method for manufacturing silicon carbide epitaxial substrate, method for manufacturing silicon carbide semiconductor device, and apparatus for manufacturing silicon carbide epitaxial substrate
#115Epitaxial growth device, production method for epitaxial wafer, and lift pin for epitaxial growth device
#116EQUIPMENT FOR MANUFACTURING SEMICONDUCTOR
#117Film growth apparatus, film growth method and maintenance method of film growth apparatus
#118Growth of A-B crystals without crystal lattice curvature
#119Film forming apparatus and film forming method
#120DEGASSING CHAMBER FOR ARSENIC RELATED PROCESSES
#121Upper dome with injection assembly
#122GAS PURGE SYSTEM AND METHOD FOR OUTGASSING CONTROL
#123High throughput semiconductor deposition system
#124CVD REACTOR WITH A MULTI-ZONE HEATED PROCESS CHAMBER
#125METHOD OF PREPARING FOR RE-OPERATION OF REACTOR FOR GROWING EPITAXIAL WAFER
#126Apparatus for manufacturing large scale single crystal monolayer of hexagonal boron nitride and method for manufacturing the same
#127Semiconductor manufacturing device and semiconductor manufacturing method
#128Process for the generation of thin inorganic films
#129Coated flat component in a CVD reactor
#130Large aluminum nitride crystals with reduced defects and methods of making them
#131Multizone control of lamps in a conical lamphead using pyrometers
#132Process and apparatus for diamond synthesis
#133Rotating disk reactor with ferrofluid seal for chemical vapor deposition
#134PRODUCTION METHOD OF EPITAXIAL SILICON WAFER, VAPOR DEPOSITION EQUIPMENT AND VALVE
#135Apparatus for depositing a thin film
#136METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
#137Reaction chamber for epitaxial growth with a loading/unloading device and reactor
#138VAPOR DEPOSITION EQUIPMENT INCLUDING A SELENIZATION PROCESS FOR FABRICATING CIGS FILM
#139Chamber components for epitaxial growth apparatus
#140Chamber components for epitaxial growth apparatus
#141EPITAXIAL WAFER GROWTH APPARATUS
#142Method for producing epitaxial silicon carbide wafer
#143Method of producing a synthetic diamond
#144APPARATUS AND METHOD FOR EPITAXIALLY GROWING SOURCES AND DRAINS OF A FINFET DEVICE
#145Large aluminum nitride crystals with reduced defects and methods of making them
#146Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
#147Nitride semiconductor crystal, manufacturing method and manufacturing equipment
#148Linear Cluster Deposition System
#149Multizone control of lamps in a conical lamphead using pyrometers
#150APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND METHOD FOR PRODUCING THE SAME
#151Production method of epitaxial silicon wafer and vapor deposition apparatus
#152Protecting a target pump interior with an ALD coating
#153Liner for epi chamber
#154Film forming apparatus, susceptor, and film forming method
#155DOPING CONTROL METHODS AND RELATED SYSTEMS
#156Apparatus and methods for alignment of a susceptor
#157Indexed gas jet injector for substrate processing system
#158ONE-PIECE INJECTOR ASSEMBLY AND ONE-PIECE EXHAUST LINER
#159WINDOW ASSEMBLY FOR SUBSTRATE PROCESSING SYSTEM
#160Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor template
#161FILM-FORMING DEVICE
#162High throughput semiconductor deposition system
#163METHOD AND APPARATUS FOR THE FABRICATION OF NANOSTRUCTURES, NETWORK OF INTERCONNECTED NANOSTRUCTURES AND NANOSTRUCTURE
#164Ceiling portion for epitaxial growth apparatus
#165Lower side wall for epitaxial growth apparatus
#166Apparatus for evaluating quality of crystal, and method and apparatus for manufacturing semiconductor light-emitting device including the apparatus
#167Upper dome with injection assembly
#168Density-matching alkyl push flow for vertical flow rotating disk reactors
#169Pre-cleaning method and preparation method of low-temperature polysilicon thin film, liquid crystal display device, and manufacturing system thereof
#170Epitaxial growth apparatus
#171APPARATUS FOR SELF-CENTERING PRE-HEAT RING
#172DEPOSITION SYSTEMS HAVING DEPOSITION CHAMBERS CONFIGURED FOR IN-SITU METROLOGY WITH RADIATION DEFLECTION AND RELATED METHODS
#173EPI pre-heat ring
#174Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
#175NITRIDE SEMICONDUCTOR GROWTH APPARATUS, AND EPITAXIAL WAFER FOR NITRIDE SEMICONDUCTOR POWER DEVICE
#176Layered substrate with a miscut angle comprising a silicon single crystal substrate and a group-III nitride single crystal layer
#177Apparatus for impurity layered epitaxy
#178CRYSTAL FILM, METHOD FOR MANUFACTURING CRYSTAL FILM, VAPOR DEPOSITION APPARATUS AND MULTI-CHAMBER APPARATUS
#179Reactor gas panel common exhaust
#180Single-cystalline aluminum nitride substrate and a manufacturing method thereof
#181Method for growing an AIN monocrystal and device for implementing same
#182High throughput multi-wafer epitaxial reactor
#183Alkyl push flow for vertical flow rotating disk reactors
#184MOCVD APPARATUS
#185Epitaxial wafer manufacturing device and manufacturing method
#186Continuous nanosynthesis apparatus and process
#187Silicon carbide single crystal manufacturing apparatus
#188Gas hydrate conversion system for harvesting hydrocarbon hydrate deposits
#189METHOD AND APPARATUS FOR FABRICATING FREE-STANDING GROUP III NITRIDE CRYSTALS
#190DOORS FOR HIGH VOLUME, LOW COST SYSTEM FOR EPITAXIAL SILICON DEPOSITION
#191Gas exhaust for high volume, low cost system for epitaxial silicon deposition
#192Crystal Growth Apparatus
#193Abatement of reaction gases from gallium nitride deposition
#194MICRO COIL, MANUFACTURING METHOD AND MANUFACTURING APPARATUS THEREOF
#195SYSTEM FOR USE IN THE FORMATION OF SEMICONDUCTOR CRYSTALLINE MATERIALS
#196METHODS AND APPARATUS FOR A CHEMICAL VAPOR DEPOSITION REACTOR
#197Self-gettering differential pump
#198METHOD OF CLEANING FILM FORMING APPARATUS
#199DEPOSITION SYSTEMS HAVING REACTION CHAMBERS CONFIGURED FOR IN-SITU METROLOGY AND RELATED METHODS
#200Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor template
#201REACTOR AND METHOD FOR PRODUCTION OF SILICON
#202FILM-FORMING APPARATUS AND METHOD
#203Substrate processing apparatus
#204Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer
#205Method of Synthesizing Nitride Semiconductor Single-Crystal Substrate
#206Method for equipping an epitaxy reactor
#207PROCESSING SYSTEMS AND APPARATUSES HAVING A SHAFT COVER
#208FILM FORMING APPARATUS, WAFER HOLDER, AND FILM FORMING METHOD
#209Linear Cluster Deposition System
#210METHOD OF FORMING FILM AND SUBSTRATE PROCESSING APPARATUS
#211THERMAL PROCESSING APPARATUS
#212Reaction chamber of an epitaxial reactor and reactor that uses said chamber
#213HVPE CHAMBER
#214Substrate processing apparatus and method for manufacturing a semiconductor device
#215Chemical vapour deposition system and process
#216CHEMICAL VAPOR DEPOSITION REACTOR WITH ISOLATED SEQUENTIAL PROCESSING ZONES
#217Method for the growth of SiC, by chemical vapor deposition, using precursors in modified cold-wall reactor
#218Method and apparatus for cleaning a substrate surface
#219Tapered Horizontal Growth Chamber
#220METAL ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS HAVING SATELLITE N-TYPE AND P-TYPE DOPING CHAMBERS
#221Substrate treatment device
#222GOLD-COATED POLYSILICON REACTOR SYSTEM AND METHOD
#223Modern hydride vapor-phase epitaxy system and methods
#224FILM DEPOSITION APPARATUS AND METHOD
#225PARALLEL SYSTEM FOR EPITAXIAL CHEMICAL VAPOR DEPOSITION
#226Metal organic chemical vapor deposition apparatus and method
#227Gas hydrate conversion system for harvesting hydrocarbon hydrate deposits
#228HEAT TREATMENT APPARATUS
#229MODULAR AND READILY CONFIGURABLE REACTOR ENCLOSURES AND ASSOCIATED FUNCTION MODULES
#230Method for Manufacturing Compound Semiconductor and Apparatus for Manufacturing the Same
#231Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
#232High throughput multi-wafer epitaxial reactor
#233Epitaxial growth method
#234COATING APPARATUS AND COATING METHOD
#235Silicon film formation apparatus and method for using same
#236CHEMICAL VAPOR DEPOSITION APPARATUS
#237METHODS AND APPARATUS FOR A CHEMICAL VAPOR DEPOSITION REACTOR
#238Methods and apparatus for a chemical vapor deposition reactor
#239METHOD AND REACTOR FOR GROWING CRYSTALS
#240Abatement of reaction gases from gallium nitride deposition
#241Process and apparatus for diamond synthesis
#242Epitaxial reactor for mass production of wafers
#243PROCESSING SYSTEM FOR FABRICATING COMPOUND NITRIDE SEMICONDUCTOR DEVICES
#244Substrate processing apparatus and method for manufacturing a semiconductor device
#245Arrangement in Connection with ALD Reactor
#246Metalorganic chemical vapor deposition reactor
#247Vapor phase growth apparatus
#248Layer depositing device and method for operating it
#249Reactor
#250Method and apparatus for cleaning a substrate surface
#251Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
#252Reactor and process for the preparation of silicon
#253Substrate treatment device
#254Apparatus for fabrication of GaN bulk single crystal and fabrication method of GaN single crystal ingot using the same
#255Apparatus for low-temperature epitaxy on a plurality semiconductor substrates
#256SINTERED METAL COMPONENTS FOR CRYSTAL GROWTH REACTORS
#257Crystal growth method and reactor design
#258Seed holder for crystal growth reactors
#259Large aluminum nitride crystals with reduced defects and methods of making them
#260Density-matching alkyl push flow for vertical flow rotating disk reactors
#261CVD reactor with stabilized process chamber height
#262Alkyl push flow for vertical flow rotating disk reactors
#263Semiconductor device including container having epitaxial silicon therein
#264Apparatus for fabrication of GaN bulk single crystal and fabrication method of GaN single crystal ingot using the same
#265Substrate processing apparatus and method for manufacturing a semiconductor device
#266Vapor phase growth apparatus
#267Multi-chamber MOCVD growth apparatus for high performance/high throughput
#268Nitride Semiconductor Single-Crystal Substrate and Method of Its Synthesis
#269Methods of growing epitaxial silicon
#270Chemical vapor deposition apparatuses and deposition methods
#271Reactor having a movable shutter
#272Single reactor, multi-pressure chemical vapor deposition for semiconductor devices
#273Systems and methods for epitaxially depositing films on a semiconductor substrate
#274Atmospheric substrate processing apparatus for depositing multiple layers on a substrate
#275Staggered ribs on process chamber to reduce thermal effects
#276HVPE apparatus and methods for growing indium nitride and indium nitride materials and structures grown thereby
#277Composition for preparing silicon carbide ingot and method for preparing silicon carbide ingot using the same
#278Continuous system for fabricating multilayer heterostructures via hydride vapor phase epitaxy