121292 ⎘
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth; Epitaxial-layer growth Controlling or regulating
Sub-classes:COOLING ARRANGEMENTS FOR PROCESSING SYSTEMS, CHAMBERS, AND RELATED METHODS TO MODIFY SUBSTRATE TEMPERATURE PROFILES
#2PROCESS MODULES INCLUDING INDEPENDENTLY OPERABLE LIFT MECHANISMS AND SEMICONDUCTOR PROCESSING SYSTEMS INCLUDING SUCH PROCESS MODULES
#3SEMICONDUCTOR WAFER PROVIDING METHOD AND SEMICONDUCTOR WAFER PROVIDING SYSTEM
#4DEVICE AND SYSTEM FOR IN-SITU SCANNING SUBSTRATE TEMPERATURE IN AN EPITAXIAL REACTOR
#5METHOD FOR FORMING AN EPITAXIAL STRUCTURE ONTO A SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS
#6ACTIVE SIC HEATING WITH ZONALITY CONTROL FOR EPI CHAMBER THERMAL PROFILE ADJUSTING
#7CHAMBER AND METHOD FOR CONTROLLING FILM DEFECTS AT AN EDGE AREA OF A SUBSTRATE
#8TEMPERATURE AND FILM ADJUSTMENTS FOR PROCESS CHAMBERS, AND RELATED SYSTEMS AND METHODS
#9MULTI-LAYERED EPITAXIAL STACK FORMED IN A PRESENCE OF A HIGHER ORDER SILICON PRECURSOR
#10SINGLE CRYSTAL SYNTHETIC DIAMOND MATERIAL VIA CHEMICAL VAPOUR DEPOSITION
#11LARGE AREA SYNTHESIS OF CUBIC PHASE GALLIUM NITRIDE ON SILICON
#12ULTRAVIOLET (UV) TREATMENT CHAMBER FOR LOW TEMPERATURE EPITAXIAL GROWTH
#13CHEMICAL VAPOR DEPOSITION PROCESS AND APPARATUS FOR DEPOSITION OF DIAMOND MATERIAL
#14MATERIAL DEPOSITION APPARATUS AND RELATED METHOD
#15PREDICTION METHOD AND DEVICE FOR EPITAXIAL LAYER OF BETA-GA2O3 GROWN BY MOCVD
#16Deposition Equipment with Adjustable Temperature Source
#17Apparatus and Method for Growth of Two-Dimensional Crystal Material
#18METHOD AND SYSTEM FOR OBTAINING HIGH-QUALITY CUBIC SILICON CARBIDE
#19METHOD FOR PRODUCING HETEROEPITAXIAL WAFER
#20IN-SITU PYROMETER FOR SILICON CARBIDE WAFER
#21LOW TEMPERATURE ATMOSPHERIC EPITAXIAL PROCESS
#22SUSCEPTOR AND EPITAXIAL LAYER GROWTH APPARATUS INCLUDING THE SAME
#23GROUP III NITRIDE LAMINATE AND METHOD OF PRODUCING GROUP III NITRIDE LAMINATE
#24METHOD FOR SUPPRESSING FORMATION OF STACKING FAULT, STRUCTURE PRODUCED BY THIS METHOD, AND METHOD FOR EVALUATING AFFECTED LAYER
#25METHOD FOR PRODUCING HETEROEPITAXIAL FILM
#26UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE AND METHOD FOR PRODUCING THEM
#27METHOD FOR THE FABRICATION OF P-TYPE Ga2O3 BY PHOSPHORUS ION IMPLANTATION
#28METHODS FOR DETERMINING SUITABILITY OF CZOCHRALSKI GROWTH CONDITIONS FOR PRODUCING SUBSTRATES FOR EPITAXY
#29SEMICONDUCTOR PROCESSING CHAMBER, SEMICONDUCTOR PROCESSING EQUIPMENT AND VAPOR EPITAXY EQUIPMENT
#30SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER
#31SILICON CARBIDE SINGLE CRYSTAL MANUFACTURING APPARATUS, COMPUTING DEVICE, AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
#32GAS-PHASE REACTOR SYSTEM-WITH A REACTION CHAMBER, A SOLID PRECURSOR SOURCE VESSEL, A GAS DISTRIBUTION SYSTEM, AND A FLANGE ASSEMBLY
#33Method of Growing Single Crystal Diamond Assisted by Polycrystalline Diamond Growth
#34EPITAXIAL WAFER MANUFACTURING METHOD AND EPITAXIAL WAFER MANUFACTURING APPARATUS
#35GROWTH CHAMBER SMART SEASONING
#36SIGNAL-TO-NOISE CORRECTION METHOD FOR ACCURATE FILMS MEASUREMENT
#37METHODS FOR DETERMINING SUITABILITY OF SILICON SUBSTRATES FOR EPITAXY
#38AUTOMATED THIN FILM DEPOSITION SYSTEM AND THIN FILM DEPOSITION METHOD TO WHICH MACHINE LEARNING IS APPLIED
#39VIRTUAL SENSOR FOR PREDICTING AND MONITORING TEMPERATURE OF CHAMBER COMPONENTS
#40SUPERLATTICE STRUCTURE AND MANUFACTURING METHOD THEREFOR
#41IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS FOR SUBSTRATE PROCESSING
#42METHOD OF GROWING BULK SINGLE CRYSTAL DIAMOND ON A SUBSTRATE IN A PRESCRIBED GAS ENVIRONMENT AT A PRESCRIBED TEMPERATURE AND PRESSURE
#43METHOD OF MANUFACTURE OF A WATCH CRYSTAL
#44Deposition Equipment with Adjustable Temperature Source
#45DEFECT REDUCTION IN DIAMOND
#46METHOD FOR PRODUCING A GALLIUM OXIDE LAYER ON A SUBSTRATE
#47METHOD FOR MEASURING THICKNESS OF SILICON EPITAXIAL LAYER
#48PHASE-CONTROLLABLE SYNTHESIS OF TRANSITION METAL DICHALCOGENIDE MONOLAYER CRYSTALS
#49DEFORMATION COMPENSATION METHOD FOR GROWING THICK GALIUM NITRIDE ON SILICON SUBSTRATE
#50LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING LAMINATED STRUCTURE
#51METHOD FOR CONTROLLING LAYER-TO-LAYER THICKNESS IN MULTI-TIER EPITAXIAL PROCESS
#52PRE-HEAT RINGS AND PROCESSING CHAMBERS INCLUDING BLACK QUARTZ, AND RELATED METHODS
#53THIN-FILM DEPOSITION APPARATUS
#54THERMAL MONITOR FOR HIGH PRESSURE PROCESSING
#55METHOD FOR DEPOSITING AN EPITAXIAL LAYER ON A SUBSTRATE WAFER MADE OF SEMICONDUCTOR MATERIAL IN A DEPOSITION DEVICE
#56METHODS FOR FORMING MULTILAYER STRUCTURES ON A SUBSTRATE AND RELATED MULTILAYER STRUCTURES
#57METHOD OF FORMING AN EPITAXIAL LAYER
#58SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING DEVICE
#59SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
#60LARGE-SIZE DIAMOND, MPCVD DEVICE AND PREPARATION METHOD OF LARGE-SIZE DIAMOND
#61Method of optimizing the EMI shielding and infrared transparency of GaAs IR windows
#62METHOD FOR SIC STEP FLOW GROWTH BY REGULATING GROWTH MONMOERS USING CHEMICAL POTENTIAL UNDER NON-EQUILIBRIUM CONDITION
#63CARBON-CONTAINING CAP LAYER FOR DOPED SEMICONDUCTOR EPITAXIAL LAYER
#64DICHROIC MIRROR AND SHORTPASS FILTER FOR IN-SITU REFLECTOMETRY
#65SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
#66DYNAMIC HVPE OF COMPOSITIONALLY GRADED BUFFER LAYERS
#67Single crystal synthetic diamond material
#68Methods of forming silicon carbide coated base substrates at multiple temperatures
#69Method for growing halide perovskite nanocrystals through in-situ chemical vapor deposition
#70METHOD FOR DEPOSITING AN EPITAXIAL LAYER ON A SUBSTRATE WAFER
#71IN-SITU EPI GROWTH RATE CONTROL OF CRYSTAL THICKNESS USING PARAMETRIC RESONANCE SENSING
#72SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer preliminary class
#73Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
#74Method of Growing Single Crystal Diamond Assisted by Polycrystalline Diamond Growth
#75EPI self-heating sensor tube as in-situ growth rate sensor
#76METHOD FOR GROWING CRYSTALS
#77MULTIJUNCTION SOLAR CELLS WITH LIGHT SCATTERING LAYER
#78FILM DEPOSITION METHOD
#79METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, RECORDING MEDIUM, AND SUBSTRATE PROCESSING APPARATUS
#80SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL
#81Method of manufacture of single crystal synthetic diamond material
#82METHOD FOR DEPOSITING AN EPITAXIAL LAYER ON A SUBSTRATE WAFER
#83Ultra-high ambipolar mobility cubic boron arsenide
#84METHODS OF FORMING SINGLE CRYSTAL PIEZOELECTRIC LAYERS USING LOW TEMPERATURE EPITAXY AND RELATED SINGLE CRYSTALLINE PIEZOELECTRIC RESONATOR FILMS
#85LARGE AREA SYNTHESIS OF CUBIC PHASE GALLIUM NITRIDE ON SILICON
#86LARGE AREA SYNTHESIS OF CUBIC PHASE GALLIUM NITRIDE ON SILICON
#87APPARATUS FOR FORMING SINGLE CRYSTAL PIEZOELECTRIC LAYERS USING LOW-VAPOR PRESSURE METALORGANIC PRECURSORS IN CVD REACTORS WITH TEMPERATURE-CONTROLLED INJECTOR COLUMNS AND METHODS OF FORMING SINGLE CRYSTAL PIEZOELECTRIC LAYERS USING THE SAME
#88BEARING SYSTEMS AND POWER CONTROL METHODS FOR BEARING DEVICE
#89GA2O3 CRYSTAL FILM DEPOSITION METHOD ACCORDING TO HVPE, DEPOSITION APPARATUS AND GA2O3 CRYSTAL FILM-DEPOSITED SUBSTRATE USING THE SAME
#90METHOD AND DEVICE FOR DEPOSITING AN EPITAXIAL LAYER ON A SUBSTRATE WAFER MADE OF SEMICONDUCTOR MATERIAL
#91APPARATUS AND METHODS FOR REDUCING SUBSTRATE COOL DOWN TIME
#92MOLECULAR BEAM EPITAXY (MBE) REACTORS AND METHODS FOR n+GaN REGROWTH
#93Method of selectively controlling nucleation for crystalline compound formation by irradiating a precursor with a pulsed energy source
#94Manufacturing method for semiconductor silicon wafer
#95Silicon carbide crystal manufacturing apparatus, control device of silicon carbide crystal manufacturing apparatus, and method of generating learning model and controlling silicon carbide crystal manufacturing apparatus
#96SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer
#97Substrate support device for a reaction chamber of an epitaxial reactor with gas flow rotation, reaction chamber and epitaxial reactor
#98Method of manufacturing semiconductor device
#99Methods for determining suitability of Czochralski growth conditions for producing substrates for epitaxy
#100Methods for determining suitability of silicon substrates for epitaxy
#101Method of producing a two-dimensional material
#102Deposition equipment with adjustable temperature source
#103IN-SITU EPI GROWTH RATE CONTROL OF CRYSTAL THICKNESS MICRO-BALANCING SENSOR
#104Method for growing a GaN single crystal film on a buffer layer on a ScAlMgO4 substrate and performing cooling so that the GaN film is peeled from the ScAlMgO4 substrate
#105Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet
#106IN-SITU AND SELECTIVE AREA ETCHING OF SURFACES OR LAYERS, AND HIGH-SPEED GROWTH OF GALLIUM NITRIDE, BY ORGANOMETALLIC CHLORINE PRECURSORS
#107In-situ film growth rate monitoring apparatus, systems, and methods for substrate processing
#108MECHANISMS FOR SUPPLYING PROCESS GAS INTO WAFER PROCESS APPARATUS
#109TREATING ARRANGEMENT WITH STORAGE CHAMBER AND EPITAXIAL REACTOR
#110ANISOTROPIC EPITAXIAL GROWTH
#111METHODS AND SYSTEMS FOR PREPARING COMPOSITE CRYSTALS
#112WAFER TEMPERATURE GRADIENT CONTROL TO SUPPRESS SLIP FORMATION IN HIGH-TEMPERATURE EPITAXIAL FILM GROWTH
#113Apparatus and method for manufacturing hexagonal silicon crystal
#114Methods of forming silicon carbide coated base substrates at multiple temperatures
#115DEVICE AND METHOD FOR MANUFACTURING GROUP III NITRIDE SUBSTRATE
#116Single crystal composite synthetic diamond material
#117Single crystal synthetic diamond material
#118Semiconductor wafer evaluation apparatus and semiconductor wafer manufacturing method
#119Method of growing single crystal diamond assisted by polycrystalline diamond growth
#120In-situ temperature mapping for epi chamber
#121Method and hardware for post maintenance vacuum recovery system
#122Method of producing a two-dimensional material
#123EPITAXIAL DIRECTED ALD CRYSTAL GROWTH
#124Epitaxial wafer production system for performing a correction based on variation in total output value of upper and lower lamps
#125Method of manufacture of single crystal synthetic diamond material
#126DIAMOND BASED GEM AND METHOD OF MAKING SAME
#127MULTI-DOPED DIAMOND FORMATION
#128Method of growing bulk single crystal diamond on a substrate in a prescribed gas environment at a prescribed temperature and pressure
#129Methods for forming large area single crystal diamond substrates with high crystallographic alignment
#130Linear lamp array for improved thermal uniformity and profile control
#131Apparatus and method for manufacturing epitaxial wafer
#132Method of selectively controlling nucleation for crystalline compound formation by irradiating a precursor with a pulsed energy source
#133GaAsSbnanowires on a graphitic substrate
#134NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR ELEMENT PRODUCTION METHOD
#135Method for calibrating temperature in chemical vapor deposition
#136Method of synthesizing molybdenum oxychloride by reacting molybdenum oxide powder and chlorine gas and growing crystals of molybdenum oxychloride from the gaseous raw material
#137System for horizontal growth of high-quality semiconductor single crystals by physical vapor transport
#138NITROGEN-ENABLED HIGH GROWTH RATES IN HYDRIDE VAPOR PHASE EPITAXY
#139METHOD OF MEASURING FILM THICKNESS, METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LAMINATE AND NITRIDE SEMICONDUCTOR LAMINATE
#140METHOD OF PRODUCING PARTICLE-SHAPED DIAMOND SINGLE-CRYSTAL USING CHEMICAL VAPOR DEPOSITION
#141Method of manufacturing p-type gallium oxide by intrinsic doping, the thin film obtained from gallium oxide and its use
#142Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
#143Epitaxial silicon carbide single crystal wafer and process for producing the same
#144Controlled homo-epitaxial growth of hybrid perovskites
#145METHOD AND DEVICE FOR MONITORING A MICROWAVE PLASMA ASSISTED DEPOSITION
#146METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND OPTOELECTRONIC SEMICONDUCTOR CHIP
#147Semiconductor substrate, and epitaxial wafer and method for producing same
#148Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate
#149Method of producing a two-dimensional material
#150Semi-insulating silicon carbide crystalline ingot having a resistivity larger than 10∧7 Ohm-cm and manufacturing method therefor
#151Method for calibrating temperature in chemical vapor deposition
#152Crystal growth apparatus
#153MULTIZONE LAMP CONTROL AND INDIVIDUAL LAMP CONTROL IN A LAMPHEAD
#154Toroidal plasma processing apparatus with a shaped workpiece holder
#155APPARATUS AND METHOD OF PRODUCING DIAMOND AND PERFORMING REAL TIME IN SITU ANALYSIS
#156Method for producing III-N templates and the reprocessing thereof and III-N template
#157METHOD AND APPARATUS FOR FORMING SILICON FILM, GERMANIUM FILM, OR SILICON GERMANIUM FILM
#158A METHOD OF MAKING AN ARRAY OF SENSOR PIXELS, AND ASSOCIATED APPARATUS AND METHODS
#159ELECTROSTATIC CONTROL OF METAL WETTING LAYERS DURING DEPOSITION
#160Method for manufacturing electronic component for heterojunction provided with buried barrier layer
#161Method for calibrating temperature in chemical vapor deposition
#162Epitaxial growing device and method for making epitaxial structure using the same
#163Method of producing a two-dimensional material
#164Processes for producing III-N single crystals, and III-N single crystal
#165PHOSPHORUS DOPED DIAMOND ELECTRODE WITH TUNABLE LOW WORK FUNCTION FOR EMITTER AND COLLECTOR APPLICATIONS
#166VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD
#167METHOD FOR CONTROLLING VAPOR PHASE GROWTH APPARATUS
#168Method of evaluating manufacturing process of silicon material and manufacturing method of silicon material
#169PROCESS OF FORMING SEMICONDUCTOR DEVICE
#170System for rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow
#171Method of manufacturing a gallium nitride substrate
#172Method for forming a thin film comprising an ultrawide bandgap oxide semiconductor
#173Method for manufacturing two-dimensional transition metal dichalcogemide thin film
#174Scintillator, scintillator panel, radiation detector and method of manufacturing scintillator
#175Epitaxial silicon carbide single crystal wafer and process for producing the same
#176Phosphorus incorporation for n-type doping of diamond with (100) and related surface orientation
#177Phosphorus doped diamond electrode with tunable low work function for emitter and collector applications
#178Method and apparatus for producing large, single-crystals of aluminum nitride
#179One-dimensional titanium nanostructure and method for fabricating the same
#180Multizone control of lamps in a conical lamphead using pyrometers
#181DIAMOND PRODUCING METHOD AND DC PLASMA ENHANCED CVD APPARATUS
#182Apparatus for depositing a thin film
#183Vapor deposition method and vapor deposition apparatus
#184Semiconductor devices comprising 2D-materials and methods of manufacture thereof
#185SiC epitaxial wafer and method for producing same, and device for producing SiC epitaxial wafer
#186Susceptor Heating For Epitaxial Growth Process
#187VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD
#188Toroidal plasma processing apparatus with a shaped workpiece holder
#189Apparatus and Method of Producing Diamond and Performing Real Time In Situ Analysis
#190VAPOR DEPOSITION EQUIPMENT INCLUDING A SELENIZATION PROCESS FOR FABRICATING CIGS FILM
#191FILM FORMING METHOD, FILM FORMING APPARATUS, AND STORAGE MEDIUM
#192APPARATUS AND METHOD FOR EPITAXIALLY GROWING SOURCES AND DRAINS OF A FINFET DEVICE
#193Substrate treatment device
#194Method of fabricating group III nitride with gradually degraded crystal structure
#195Method of fabricating bulk group III nitride crystals in supercritical ammonia
#196Multizone control of lamps in a conical lamphead using pyrometers
#197Method for determining preferential deposition parameters for a thin layer of III-V material
#198Method of producing epitaxial wafer
#199Post-synthesis processing of diamond and related super-hard materials
#200Contamination control method of vapor deposition apparatus and method of producing epitaxial silicon wafer
#201Fabrication of semiconductor device using alternating high and low temperature layers
#202Heterogeneous material integration through guided lateral growth
#203Silicon carbide semiconductor device manufacturing method and silicon carbide semiconductor device
#204Vapor phase growth method of growing a film on a substrate while heating the substrate with a heating unit
#205Method for producing III-N single crystals, and III-N single crystal
#206Transfer chamber metrology for improved device yield
#207Epitaxial wafer and method for fabricating the same
#208Method of measuring contamination amount of vapor phase growth apparatus, and method of manufacturing epitaxial wafer
#209Thick polycrystalline synthetic diamond wafers for heat spreading applications and microwave plasma chemical vapour depositon synthesis techniques
#210Silicon carbide semiconductor device manufacturing method
#211Mechanisms for supplying process gas into wafer process apparatus
#212Method of purifying nanodiamond powder and purified nanodiamond powder
#213PREFERRED VOLUMETRIC ENLARGEMENT OF III-NITRIDE CRYSTALS
#214Method and apparatus for producing large, single-crystals of aluminum nitride
#215Method for manufacturing a single crystal diamond
#216Method for producing III-N templates and the reprocessing thereof and III-N template
#217VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD
#218THIN FILM FORMATION
#219Single crystal CVD synthetic diamond material
#220Ingot, silicon carbide substrate, and method for producing ingot
#221Film formation apparatus and film formation method
#222Wafer and method of fabricating the same
#223Asymmetric cyclic desposition etch epitaxy
#224Selective epitaxial growth method and film forming apparatus
#225Crystal layered structure and method for manufacturing same, and semiconductor element
#226Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
#227Method for manufacturing carbon nanotubes
#228Nitride semiconductor crystal producing method including growing nitride semiconductor crystal over seed crystal substrate
#229Method and apparatus for measuring temperature of semiconductor layer
#230Methods for increasing growth rate during atomic layer deposition of thin films
#231SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME, AND DEVICE FOR PRODUCING SIC EPITAXIAL WAFER
#232Method of fabricating wafer
#233Diamond producing method and DC plasma enhanced CVD apparatus
#234APPARATUS AND METHOD FOR MEASURING THE DIMENSIONS OF 1-DIMENSIONAL AND 0-DIMENSIONAL NANOSTRUCTURES IN REAL-TIME DURING EPITAXIAL GROWTH
#235Method of purifying nanodiamond powder and purified nanodiamond powder
#236Method for crystal growth of a metal-nonmetal compound using a metallophobic-metallophilic surfactant and a thin metal wetting layer
#237Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture
#238Susceptor assemblies for supporting wafers in a reactor apparatus
#239Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and method for fabricating a nitride semiconductor template
#240Load lock having secondary isolation chamber
#241VAPOR PHASE GROWTH APPARATUS
#242TARGETED TEMPERATURE COMPENSATION IN CHEMICAL VAPOR DEPOSITION SYSTEMS
#243FILM-FORMING METHOD AND FILM-FORMING APPARATUS
#244Method and apparatus for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber
#245Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate
#246VAPOR GROWTH METHOD AND VAPOR GROWTH APPARATUS
#247DEPOSITION SYSTEMS HAVING REACTION CHAMBERS CONFIGURED FOR IN-SITU METROLOGY AND RELATED METHODS
#248VAPOR GROWTH APPARATUS AND VAPOR GROWTH METHOD
#249METHOD OF VAPOR PHASE EPITAXY AND VAPOR PHASE EPITAXY DEVICE
#250Titanium-doped indium oxide films
#251Methods For Monitoring Growth Of Semiconductor Layers
#252SIC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME
#253NITRIDE SEMICONDUCTOR MULTILAYER STRUCTURE, METHOD FOR PRODUCING SAME, AND NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT
#254Method and apparatus for the selective deposition of epitaxial germanium stressor alloys
#255Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow
#256Production method of a layered body
#257Method and apparatus for producing epitaxial wafer
#258EPITAXIAL GROWTH TEMPERATURE CONTROL IN LED MANUFACTURE
#259Transfer chamber metrology for improved device yield
#260METHOD FOR MANUFACTURING CARBON NANOTUBES
#261Manufacturing method and apparatus for semiconductor device
#262Controlling an epitaxial growth process in an epitaxial reactor
#263Method of temperature determination for deposition reactors
#264FILM DEPOSITION APPARATUS
#265MOCVD REACTOR HAVING A CEILING PANEL COUPLED LOCALLY DIFFERENTLY TO A HEAT DISSIPATION MEMBER
#266Method and device for measuring temperature during deposition of semiconductor
#267FILM FORMING APPARATUS AND METHOD
#268Methods of growing a silicon carbide epitaxial layer on a substrate to increase and control carrier lifetime
#269Apparatus for manufacturing carbon nanotubes
#270COATING APPARATUS AND COATING METHOD
#271SUBSTRATE PROCESSING APPARATUS
#272Method for producing epitaxially coated silicon wafers
#273Load lock having secondary isolation chamber
#274Production Method for a Codoped Bulk SiC Crystal and High-Impedance SiC Substrate
#275Method and apparatus for manufacturing epitaxial silicon wafer
#276Growth of germanium epitaxial thin film with negative photoconductance characteristics and photodiode using the same
#277Membrane separation of feed and growth environments in carbon nanostructure growth
#278Ultratough single crystal boron-doped diamond
#279Microwave plasma reactors
#280Method and apparatus for producing group III nitride
#281Titanium-doped indium oxide films
#282Method for Manufacturing Epitaxial Wafer and Epitaxial Wafer
#283CONTROLLED EDGE RESISTIVITY IN A SILICON WAFER
#284Methods for calibrating a process for growing an epitaxial silicon film and methods for growing an epitaxial silicon film
#285Apparatus and Method for Controlling the Surface Temperature of a Substrate in a Process Chamber
#286EPITAXIAL REACTOR WITH SUSCEPTOR CONTROLLED POSITIONING
#287SEMICONDUCTOR MANUFACTURING APPARATUS AND SUBSTRATE PROCESSING METHOD
#288Method for Manufacturing Epitaxial Wafer and Epitaxial Wafer Manufactured by this Method
#289Method of controlling an epitaxial growth process in an epitaxial reactor
#290Method and apparatus for producing single crystalline diamonds
#291Apparatus for measuring semiconductor physical characteristics
#292Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device
#293Method for growing epitaxial crystal
#294Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate
#295TECHNIQUE FOR FORMING A SILICON NITRIDE LAYER HAVING HIGH INTRINSIC COMPRESSIVE STRESS
#296Atomic layer deposited titanium-doped indium oxide films
#297Method and apparatus for producing large, single-crystals of aluminum nitride
#298Temperature control method of epitaxial growth apparatus
#299Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path
#300Apparatus for measuring semiconductor physical characteristics