121308 ⎘
Production of homogeneous polycrystalline material with defined structure directly from the gas state
Sub-classes:SiC POLYCRYSTAL MANUFACTURING METHOD
#2PIEZOELECTRIC FILM, PIEZOELECTRIC STACK, PIEZOELECTRIC ELEMENT, AND METHOD FOR PRODUCING PIEZOELECTRIC STACK
#3SiC POLYCRYSTAL MANUFACTURING METHOD
#4LOW-DIMENSIONAL PEROVSKITE-STRUCTURED METAL HALIDE AND PREPARATION METHOD AND APPLICATION THEREOF
#5RUTILE PHASE TIOX DEPOSITION WITH PREFERRED CRYSTAL ORIENTATIONS
#6Component and semiconductor manufacturing device
#7Method for carrying out phosphide in-situ injection synthesis by carrier gas
#8Nitride semiconductor template, method for manufacturing nitride semiconductor template, and method for manufacturing nitride semiconductor free-standing substrate
#9Polycrystalline SiC substrate and method for manufacturing same
#10Method for synthesizing ultrahigh-purity silicon carbide
#11Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorph
#12Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon
#13METHOD FOR PRODUCING GEMSTONES FROM SILICON CARBIDE
#14Systems and methods for distributing gas in a chemical vapor deposition reactor
#15Method of manufacturing a SiCAlNsubstrate, method of manufacturing an epitaxial wafer, SiCAlNsubstrate, and epitaxial wafer
#16Method for growing thin film
#17Scintillator with fast decay time