121330 ⎘
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape; Inorganic compounds or compositions Nitrides
Process for Depositing Scandium Nitride by Atomic Layer Deposition Techniques
#2METHODS FOR CRYSTAL GROWTH BY REPLACING A SUBLIMATED TARGET SOURCE MATERIAL WITH A CANDIDATE SOURCE MATERIAL
#3METHOD FOR MANUFACTURING GAN HEMT POWER SEMICONDUCTOR EPITAXIAL WAFERS WITH HIGH-QUALITY GAN CHANNEL REGION THROUGH GROWTH TEMPERATURE MODULATION
#43D MICRO-CURVED EPITAXIAL STRUCTURE AND PREPARATION METHOD
#5Group III/IV/V-assisted heteroepitaxial growth of II-(IV/V)-N optoelectronic semiconductors
#6SILICON NITRIDE SINTERED COMPACT, SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT BOARD, AND SEMICONDUCTOR DEVICE
#7SINGLE CRYSTALLINE TA3N5 NANOPARTICLES MODIFIED WITH A MOX COCATALYST, A CATALYST, METHODS FOR WATER SPLITTING USING THE CATALYST, AND METHODS TO MAKE SAME
#8DIAMOND STRUCTURE AND METHOD OF FORMING A DIAMOND STRUCTURE
#9BORON NITRIDE LAYER, APPARATUS INCLUDING THE SAME, AND METHOD OF FABRICATING THE BORON NITRIDE LAYER
#10QUANTITATIVE TEXTURED POLYCRYSTALLINE COATINGS
#11LAMINATED STRUCTURE, ELECTRONIC DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING THE SAME
#12GAN EPITAXIAL SUBSTRATE
#13GAN SUBSTRATE
#14NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
#15SEED SUBSTRATE FOR NITRIDE CRYSTAL GROWTH, PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERMEDIATE
#16METHODS AND APPARATUSES FOR CRYSTAL GROWTH
#17Tantalum Nitride Doped With One Or More Metals, A Catalyst, Methods For Water Splitting Using The Catalyst, And Methods To Make Same
#18SEMICONDUCTOR SUBSTRATE, MANUFACTURING METHOD AND MANUFACTURING APPARATUS THEREFOR, GaN-BASED CRYSTAL BODY, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
#19APPARATUS FOR PRODUCING ALN WHISKERS
#20ALPHA GALLIUM OXIDE THIN-FILM STRUCTURE HAVING HIGH CONDUCTIVITY OBTAINED USING SELECTIVE AREA GROWTH IN HVPE GROWTH MANNER AND METHOD FOR MANUFACTURING THE SAME
#21CONDUCTIVE C-PLANE GaN SUBSTRATE
#22GA2O3-BASED SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING GA2O3-BASED SINGLE CRYSTAL SUBSTRATE
#23EPITAXIAL SILICON CHANNEL GROWTH
#24EPITAXIAL SILICON CHANNEL GROWTH
#25COMPOSITE STRUCTURE OF CERAMIC SUBSTRATE
#26Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer
#27GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER GROWTH METHOD, NITRIDE SEMICONDUCTOR INGOT AND SPUTTERING TARGET
#28METHODS OF FORMING SINGLE CRYSTAL PIEZOELECTRIC LAYERS USING LOW TEMPERATURE EPITAXY AND RELATED SINGLE CRYSTALLINE PIEZOELECTRIC RESONATOR FILMS
#29METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SEED CRYSTAL SUBSTRATE
#30Vapor phase epitaxial growth device
#31Forming Nanotwinned Regions in a Ceramic Coating at a Tunable Volume Fraction
#32GROUP III NITRIDE CRYSTAL MANUFACTURING APPARATUS AND MANUFACTURING METHOD
#33AlN MONOCRYSTAL PLATE
#34Methods and compositions for RNA-directed target DNA modification and for RNA-directed modulation of transcription
#35Method for producing a group III compound crystal by hydride vapor phase epitaxy on a seed substrate formed on a group III nitride base substrate
#36NITRIDE CRYSTAL, SEMICONDUCTOR LAMINATE, AND METHOD FOR MANUFACTURING NITRIDE CRYSTAL
#37Method and apparatus for producing AlN whiskers, AlN whisker bodies, AlN whiskers, resin molded body, and method for producing resin molded body
#38Quantitative textured polycrystalline coatings
#39Two-dimensional, ordered, double transition metals carbides having a nominal unit cell composition m′2M″NXN+1
#40METHOD FOR PRODUCING GROUP 13 ELEMENT NITRIDE CRYSTAL LAYER, AND SEED CRYSTAL SUBSTRATE
#41Gallium nitride-based sintered compact and method for manufacturing same
#42NITRIDE SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND LAMINATED STRUCTURE
#43Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal
#44Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal
#45Nitride semiconductor substrate, method for manufacturing nitride semiconductor substrate, and laminated structure
#46Methods for crystal growth by replacing a sublimated target source material with a candidate source material
#47SEMICONDUCTOR WAFER
#48GaN single crystal and method for manufacturing GaN single crystal
#49METHOD OF FABRICATING METAL-NITRIDE VERTICALLY ALIGNED NANOCOMPOSITES
#50Unknown
#51Nitride semiconductor substrate, laminate, substrate selection program, substrate data output program, off-angle coordinate map, and methods thereof
#52Method for producing GaN crystal
#53Epitaxial structure
#54Boron nitride layer, apparatus including the same, and method of fabricating the boron nitride layer
#55Method for manufacturing nitride catalyst
#56Conductive C-plane GaN substrate
#57ALN CRYSTAL PREPARATION METHOD, ALN CRYSTALS, AND ORGANIC COMPOUND INCLUDING ALN CRYSTALS
#58ALUMINUM NITRIDE PLATE
#59Aluminum nitride plate
#60Fe—Pt based magnetic material sintered compact
#61Conductive C-plane GaN substrate
#62TRANSPARENT CERAMIC WITH COMPLEX GEOMETRY
#63Two-dimensional, ordered, double transition metals carbides having a nominal unit cell composition M′2M″NXN+1
#64Method for growing GaN crystal and c-plane GaN substrate
#65Vapor phase epitaxial growth device
#66Composite nitride-based film structure and method for manufacturing same
#67Base substrate, functional element, and production method for base substrate
#68Crystal laminate, semiconductor device and method for manufacturing the same
#69Nitride crystal substrate, semiconductor laminate, method of manufacturing semiconductor laminate and method of manufacturing semiconductor device
#70Group 13 element nitride layer, free-standing substrate and functional element
#71Group 13 element nitride layer, free-standing substrate and functional element
#72Nitride catalyst and method for manufacturing the same
#73Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements
#74Method and apparatus for producing AlN whiskers, AlN whisker bodies, AlN whiskers, resin molded body, and method for producing resin molded body
#75Pressure container for crystal production
#76Nitride crystal substrate and method for manufacturing the same
#77Source material for electronic device applications
#78Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities
#79Group III nitride semiconductor substrate and method for manufacturing group III nitride semiconductor substrate
#80Gallium nitride laminated substrate and semiconductor device
#81Apparatus provided with a crucible including a porous baffle plate therein for manufacturing compound single crystal and method for manufacturing compound single crystal
#82Nitride semiconductor substrate, manufacturing method therefor, and semiconductor device
#83Compound semiconductor substrate comprising a SiC layer
#84Semiconductor substrate, gallium nitride single crystal, and method for producing gallium nitride single crystal
#85GaAs substrate and method for manufacturing the same
#86Group 13 nitride layer, composite substrate, and functional element
#87Group III nitride stacked body, and semiconductor device having the stacked body
#88Method for growing GaN crystal and C-plane GaN substrate
#89Conductive C-plane GaN substrate
#90Production Method and Production Device for Nitrogen Compound
#91GaN single crystal and method for manufacturing GaN single crystal
#92Method for Producing Group III Nitride Laminate
#93Surface-coated cutting tool and method of producing the same
#94Epitaxial substrate
#95Method for producing GaN crystal
#96Manufacturing method for group III nitride semiconductor substrate and group III nitride semiconductor substrate
#97Epitaxial growing device and method for making epitaxial structure using the same
#98Epitaxial substrate for semiconductor elements, semiconductor element, and manufacturing method for epitaxial substrates for semiconductor elements
#99Group 13 (III) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities
#100Method for manufacturing nitride semiconductor substrate
#101PHOTOELECTRODE, METHOD FOR PRODUCING SAME AND PHOTOELECTROCHEMICAL CELL
#102RUTILE-TYPE NIOBIUM OXYNITRIDE, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR STRUCTURE
#103ANATASE-TYPE NIOBIUM OXYNITRIDE, METHOD FOR PRODUCING SAME, AND SEMICONDUCTOR STRUCTURE
#104Surface-coated cutting tool and method of producing the same
#105Method of making a single crystal wavelength conversion element, single crystal wavelength conversion element, and light source containing same
#106Nitride semiconductor template and nitride semiconductor device
#107Photocurable composition, pattern forming method, and method for manufacturing device
#108Two-dimensional, ordered, double transition metals carbides having a nominal unit cell composition M′M″X+1
#109METAL STRIP OR SHEET HAVING A CHROMIUM-NITRIDE COATING, BIPOLAR PLATE AND ASSOCIATED MANUFACTURING METHOD
#110Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN films and its alloys with AIN at low temperatures
#111Nitride semiconductor template, manufacturing method thereof, and epitaxial wafer
#112Method for producing crystal substrate
#113C-plane GaN substrate
#114GaN single crystal and method for manufacturing GaN single crystal
#115Apparatus for manufacturing large scale single crystal monolayer of hexagonal boron nitride and method for manufacturing the same
#116Group 13 element nitride crystal substrate and function element
#117Alumina substrate
#118SURFACE-COATED CUTTING TOOL HAVING EXCELLENT CHIP RESISTANCE
#119ALN CRYSTAL PREPARATION METHOD, ALN CRYSTALS, AND ORGANIC COMPOUND INCLUDING ALN CRYSTALS
#120Method for rinsing compound semiconductor, solution for rinsing compound semiconductor containing gallium as constituent element, method for fabricating compound semiconductor device, method for fabricating gallium nitride substrate, and gallium nitride substrate
#121Method for making epitaxial structure
#122Method of making a joint between sapphire parts
#123Transparent ceramic with complex geometry
#124METHOD FOR GROWING NIOBIUM OXYNITRIDE LAYER
#125Controlled growth of nanoscale wires
#126Process for producing group III nitride crystal and apparatus for producing group III nitride crystal
#127Method for producing group-III nitride crystal, group-III nitride crystal, semiconductor device, and device for producing group-III nitride crystal
#128Method for producing perovskite metal oxynitride
#129Nitride semiconductor single crystal substrate manufacturing method
#130Doped rare earth nitride materials and devices comprising same
#131Method for producing nitride crystal
#132Template for epitaxial growth, method for producing the same, and nitride semiconductor device
#133Source material for electronic device applications
#134METHOD FOR FABRICATING SINGLE-CRYSTALLINE NIOBIUM OXYNITRIDE FILM AND METHOD FOR GENERATING HYDROGEN USING SINGLE-CRYSTALLINE NIOBIUM OXYNITRIDE FILM
#135Epitaxial Structure and Growth Method of Group-III Nitrides
#136Metal nitride material for thermistor, method for producing same, and film type thermistor sensor
#137Metal nitride material for thermistor, method for producing same, and film type thermistor sensor
#138Composite substrate, method for fabricating same, function element, and seed crystal substrate
#139Magnetic material including α″-Fe(NZ)or a mixture of α″-FeZand α″-FeN, where Z includes at least one of C, B, or O
#140Electro-optical device, manufacturing method for electro-optical device, and electronic apparatus
#141MULTILAYER THIN FILM FOR CUTTING TOOL AND CUTTING TOOL INCLUDING THE SAME
#142Metal nitride material for thermistor, method for producing same, and film type thermistor sensor
#143Method for synthesizing hexagonal tungsten nitride, and hexagonal tungsten nitride
#144Method of synthesising nitride nanocrystals
#145METHOD FOR GROWING ZIRCONIUM NITRIDE CRYSTAL
#146Fe-Pt based magnetic material sintered compact
#147REN semiconductor layer epitaxially grown on REAIN/REO buffer on Si substrate
#148Epitaxial growth of cubic and hexagonal InN films and their alloys with AlN and GaN
#149CHIRAL STRUCTURE, METHOD OF MAKING A CHIRAL STRUCTURE, AND ROLLED-UP STRUCTURE WITH MODULATED CURVATURE
#150Metal nitride material for thermistor, method for producing same, and film type thermistor sensor
#151METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR
#152Metal nitride material for thermistor, method for producing same, and film type thermistor sensor
#153Metal nitride material for thermistor, method for producing same, and film thermistor sensor
#154Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrate
#155Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
#156Method for growing an AIN monocrystal and device for implementing same
#157Films of nitrides of group 13 elements and layered body including the same
#158SUPERHARD CARBON NITRIDE AND METHOD FOR PRODUCING THE SAME
#159Method for forming compound epitaxial layer by chemical bonding and epitaxy product made by the same method
#160Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperatures
#161System and process for high-density, low-energy plasma enhanced vapor phase epitaxy
#162Method for making epitaxial structure
#163SiCAlNsubstrate, and epitaxial wafer
#164Method for producing hexagonal boron nitride single crystals
#165METHOD AND APPARATUS FOR PRODUCING CRYSTAL OF METAL NITRIDE OF GROUP 13 OF THE PERIODIC TABLE
#166Method for producing N-type group III nitride single crystal, N-type group III nitride single crystal, and crystal substrate
#167Fabrication of nitride nanoparticles
#168Nanoparticles
#169Growth method of FeN material
#170Growth process for gallium nitride porous nanorods
#171Process for producing SiCAlNbase material, process for producing epitaxial wafer, SiCAlNbase material, and epitaxial wafer
#172Method for producing nanostructures on metal oxide substrate, method for depositing thin film on same, and thin film device
#173Method of manufacturing a SiCAlNsubstrate, method of manufacturing an epitaxial wafer, SiCAlNsubstrate, and epitaxial wafer
#174Composition Comprising Rare-earth Dielectric
#175NITRIDE CRYSTAL, NITRIDE CRYSTAL SUBSTRATE, EPILAYER-CONTAINING NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#176Production of a hexagonal boron nitride crystal body capable of emitting out ultraviolet radiation
#177Method for forming tungsten materials during vapor deposition processes
#178Solid-state high-luminance far ultraviolet light emitting element including highly pure hexagonal boron nitride single crystal
#179Hydrogen permeable film and method for manufacturing the same
#180METHOD FOR THE PREPARATION OF CERAMIC MATERIALS
#181Method for forming tungsten materials during vapor deposition processes
#182Method for depositing tungsten-containing layers by vapor deposition techniques
#183Low-temperature catalyzed formation of segmented nanowire of dielectric material
#184Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
#185Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
#186Epitaxial ferromagnetic NiFeN
#187System and process for high-density, low-energy plasma enhanced vapor phase epitaxy
#188Epitaxial oxide films via nitride conversion
#189TECHNIQUE FOR FORMING A SILICON NITRIDE LAYER HAVING HIGH INTRINSIC COMPRESSIVE STRESS
#190Method for forming tungsten materials during vapor deposition processes
#191Method for depositing tungsten-containing layers by vapor deposition techniques
#192Production of elemental films using a boron-containing reducing agent
#193Apparatus and method for growth of a thin film
#194Low-temperature catalyzed formation of segmented nanowire of dielectric material
#195Method for forming tungsten materials during vapor deposition processes
#196Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
#197Method for depositing tungsten-containing layers by vapor deposition techniques
#198Method for manufacturing granular silicon crystal
#199Single crystal of highly purified hexagonal boron nitride capable of far ultraviolet high-luminance light emission, process for producing the same, far ultraviolet high-luminance light emitting device including the single crystal, and utilizing the device, solid laser and solid light emitting unit
#200Method and system for controlling the presence of fluorine in refractory metal layers
#201Method for depositing nanolaminate thin films on sensitive surfaces
#202Composition comprising rare-earth dielectric
#203Method of forming a rare-earth dielectric layer
#204Epitaxial ferromagnetic NiFeN
#205Mehtod for processing nitride semiconductor crystal surface and nitride semiconductor crystal obtained by such method
#206Epitaxial oxide films via nitride conversion
#207Hafnium nitride buffer layers for growth of GaN on silicon
#208Rare earth-oxides, rare earth-nitrides, rare earth-phosphides and ternary alloys with silicon
#209Rare earth-oxides, rare earth -nitrides, rare earth -phosphides and ternary alloys with silicon
#210Method for depositing nanolaminate thin films on sensitive surfaces
#211Production of elemental films using a boron-containing reducing agent
#212Highly crystalline aluminum nitride multi-layered substrate and production process thereof
#213Method and system for controlling the presence of fluorine in refractory metal layers
#214Method of modifying source chemicals in an ALD process
#215Catalyst solvents for carbon nitride
#216Ultrapure mineralizers and methods for nitride crystal growth
#217Capsule for high pressure, high temperature processing of materials and methods of use