121334 ⎘
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape; Inorganic compounds or compositions; AB compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi Gallium arsenide
Low Etch Pit Density Gallium Arsenide Crystals With Boron Dopant
#2GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING SAME
#3SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
#4METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSENIDE SUBSTRATES
#5GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND MANUFACTURING METHOD THEREFOR
#6FAST COOLING OF REACTOR FROM HIGH TEMPERATURES
#7LOW ETCH PIT DENSITY 6 INCH SEMI-INSULATING GALLIUM ARSENIDE WAFERS
#8GROUP III-V COMPOUND SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE AND PRODUCTION METHOD THEREFOR
#9GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING SAME
#10GAAS WAFER, GAAS WAFER GROUP, AND METHOD OF PRODUCING GAAS INGOT
#11METHOD FOR MANUFACTURING PHOTONIC CRYSTAL AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE
#12CONTROL OF SURFACE MORPHOLOGY DURING THE GROWTH OF (110)-ORIENTED GAAS BY HYDRIDE VAPOR PHASE EPITAXY
#13Method of producing large EMI shielded GaAs infrared windows
#14METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS
#15Method of producing large EMI shielded GaAs and GaP infrared windows
#16Method of optimizing the EMI shielding and infrared transparency of GaAs IR windows
#17Method of producing large GaAs and GaP infrared windows
#18SEMI-INSULATING GALLIUM ARSENIDE SINGLE CRYSTAL, PREPARATION METHOD AND GROWTH DEVICE THEREFOR
#19METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSENIDE SUBSTRATES
#20Low etch pit density 6 inch semi-insulating gallium arsenide wafers
#21GaAs WAFER AND METHOD OF PRODUCING GaAs INGOT
#22Optimized heteroepitaxial growth of semiconductors
#23GaAs INGOT AND METHOD OF PRODUCING GaAs INGOT, AND GaAs WAFER
#24METHOD OF FORMING SHADOW WALLS FOR FABRICATING PATTERNED STRUCTURES
#25Optimized heteroepitaxial growth of semiconductors
#26Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment
#27Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment
#28Optimized heteroepitaxial growth of semiconductors
#29Optimized heteroepitaxial growth of semiconductors
#30Optimized Heteroepitaxial Growth of Semiconductors
#31Optimized Heteroepitaxial Growth of Semiconductors
#32Optimized Heteroepitaxial Growth of Semiconductors
#33Optimized Heteroepitaxial Growth of Semiconductors
#34Optimized heteroepitaxial growth of semiconductors
#35Gallium arsenide single crystal substrate and method for producing gallium arsenide single crystal substrate
#36Method for manufacturing a monocrystalline layer of GaAs material and substrate for epitaxial growth of a monocrystalline layer of GaAs material
#37CRYSTALLIZATION OF TWO-DIMENSIONAL STRUCTURES COMPRISING MULTIPLE THIN FILMS
#38METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSENIDE SUBSTRATES
#39QPM STRUCTURES BASED ON OPTIMIZED OP-GaAs TEMPLATES WITHOUT MBE ENCAPSULATING LAYER
#40Optimized heteroepitaxial growth of semiconductors
#41Device and method of manufacturing AIII-BV-crystals and substrate wafers manufactured thereof free of residual stress and dislocations
#42Layered group III-V compound and nanosheet containing arsenic, and electrical device using the same
#43Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity
#44Gallium arsenide single crystal substrate
#45Method for producing a sheet from a melt by imposing a periodic change in the rate of pull
#46Crystal and substrate of conductive GaAs, and method for forming the same
#47Vapor phase epitaxy method
#48VAPOR PHASE EPITAXY METHOD
#49Vapor phase epitaxy method
#50HYDRIDE ENHANCED GROWTH RATES IN HYDRIDE VAPOR PHASE EPITAXY
#51Layered GaAs, method of preparing same, and GaAs nanosheet exfoliated from same
#52Concentric flow reactor
#53GaAsSbnanowires on a graphitic substrate
#54GALLIUM ARSENIDE SINGLE CRYSTAL AND GALLIUM ARSENIDE SINGLE CRYSTAL SUBSTRATE
#55Methods for improved III/V nano-ridge fabrication on silicon
#56Method for manufacturing a monocrystalline layer of GaAs material and substrate for epitaxtial growth of a monocrystalline layer of GaAs material
#57Crystallization of two-dimensional structures comprising multiple thin films
#58NITROGEN-ENABLED HIGH GROWTH RATES IN HYDRIDE VAPOR PHASE EPITAXY
#59Methods of exfoliating single crystal materials
#60HYDRIDE VAPOR PHASE EPITAXY REACTORS
#61Composite nitride-based film structure and method for manufacturing same
#62Low etch pit density gallium arsenide crystals with boron dopant
#63Low etch pit density 6 inch semi-insulating gallium arsenide wafers
#64Gallium arsenide crystal substrate
#65STRETCHABLE CRYSTALLINE SEMICONDUCTOR NANOWIRE AND PREPARATION METHOD THEREOF
#66Concentric flow reactor
#67SEMICONDUCTOR SYNTHESIZING DEVICE AND METHOD
#68REACTION DEVICE FOR HORIZONTAL BOAT PRODUCTION METHOD
#69Semi-insulating compound semiconductor substrate and semi-insulating compound semiconductor single crystal
#70Gallium-arsenide-based compound semiconductor crystal and wafer group
#71LAYERED GaAs, METHOD OF PREPARING SAME, AND GaAs NANOSHEET EXFOLIATED FROM SAME
#72HIGH GROWTH RATE DEPOSITION FOR GROUP III/V MATERIALS
#73METHOD FOR MANUFACTURING CRYSTAL INGOT
#74Gallium arsenide crystal body and gallium arsenide crystal substrate
#75GaAs substrate and method for manufacturing the same
#76GaAs crystal
#77Hydride enhanced growth rates in hydride vapor phase epitaxy
#78Architectures enabling back contact bottom electrodes for semiconductor devices
#79Crystal and substrate of conductive GaAs, and method for forming the same
#80Single-crystal pulling apparatus and single-crystal pulling method
#81OFF-AXIS EPITAXIAL LIFT PROCESS
#82Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneity
#83Off-axis epitaxial lift off process
#84Indium phosphide wafer, photoelectric conversion element, and method for producing a monocrystalline indium phosphide
#85GaAs thin film grown on Si substrate, and preparation method for GaAs thin film grown on Si substrate
#86Methods for high growth rate deposition for forming different cells on a wafer
#87Method for cleaning exhaust passage for semiconductor crystal manufacturing device
#88Selective nanoscale growth of lattice mismatched materials
#89Ultra long lifetime gallium arsenide
#90Concentric flower reactor
#91Heteroepitaxial growth of orientation-patterned materials on orientation-patterned foreign substrates
#92GaAs crystal
#93GaAs/GaAs(1-x-y)SbxNy CORE-SHELL NANOWIRES
#94Gas-phase synthesis of epitaxial semiconductor wires from seed crystals
#95Multi-zone variable power density heater apparatus containing and methods of using the same
#96InGaAs film grown on Si substrate and method for preparing the same
#97Method for determining preferential deposition parameters for a thin layer of III-V material
#98CONTROLLABLE OXYGEN CONCENTRATION IN SEMICONDUCTOR SUBSTRATE
#99Indium phosphide wafer, photoelectric conversion element, and method for producing a monocrystalline indium phosphide
#100Laser epitaxial lift-off of high efficiency solar cell
#101Use of freestanding nitride veneers in semiconductor devices
#102GaAs thin films and methods of making and using the same
#103IIIA-VA group semiconductor single crystal substrate and method for preparing same
#104Rapid Thinning of GaN and SiC Substrates and Dry Epitaxial Lift-off
#105Substrate structures and methods
#106Selective nanoscale growth of lattice mismatched materials
#107Nanowire device having graphene top and bottom electrodes and method of making such a device
#108Methods for growing III-V materials on a non III-V material substrate
#109Vacuum storage method and device for crystalline material
#110Method of producing GaAs single crystal and GaAs single crystal wafer
#111Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal
#112Generating a homogeneous magnetic field while pulling a single crystal from molten semiconductor material
#113Fabrication of low-loss, light-waveguiding, orientation-patterned semiconductor structures
#114Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient
#115Apparatus for cleaning exhaust passage for semiconductor crystal manufacturing device
#116Off-axis epitaxial lift off process
#117USE OF FREESTANDING NITRIDE VENEERS IN SEMICONDUCTOR DEVICES
#118Methods For Monitoring Growth Of Semiconductor Layers
#119GaAs SINGLE CRYSTAL WAFER AND METHOD OF MANUFACTURING THE SAME
#120CRYSTAL GROWTH APPARATUS AND METHOD
#121GaAs Wafer And Method For Manufacturing The GaAs Wafer
#122Method and apparatus for producing semiconductor crystal, and semiconductor crystal
#123Method and Apparatus for Producing Gallium Arsenide and Silicon Composites and Devices Incorporating Same
#124MOCVD REACTOR HAVING A CEILING PANEL COUPLED LOCALLY DIFFERENTLY TO A HEAT DISSIPATION MEMBER
#125Low etch pit density (EPD) semi-insulating III-V wafers
#126CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING THE SAME
#127System and method for crystal growing
#128High throughput recrystallization of semiconducting materials
#129LOW ETCH PIT DENSITY (EPD) SEMI-INSULATING III-V WAFERS
#130Method of high growth rate deposition for group III/V materials
#131Method of reducing memory effects in semiconductor epitaxy
#132Si-doped GaAs single crystal ingot and process for producing the same, and Si-doped GaAs single crystal wafer produced from Si-doped GaAs single crystal ingot
#133Nanowire synthesis
#134BASE STRUCTURE FOR III-V SEMICONDUCTOR DEVICES ON GROUP IV SUBSTRATES AND METHOD OF FABRICATION THEREOF
#135Method for manufacturing light emitting device and light emitting device
#136Tiled substrates for deposition and epitaxial lift off processes
#137REACTOR LID ASSEMBLY FOR VAPOR DEPOSITION
#138Methods for heating with lamps
#139Method for vapor deposition
#140HEATING LAMP SYSTEM
#141Wafer carrier track
#142VAPOR DEPOSITION REACTOR SYSTEM
#143Multiple stack deposition for epitaxial lift off
#144Continuous feed chemical vapor deposition
#145NANOSTRUCTURE ARRAYS AND METHODS FOR FORMING SAME
#146METHOD FOR MANUFACTURING III-V COMPOUND SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING EPITAXIAL WAFER, III-V COMPOUND SEMICONDUCTOR SUBSTRATE, AND EPITAXIAL WAFER
#147Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficient
#148Low Etch Pit Density (EPD) Semi-Insulating GaAs Wafers
#149METHODS AND APPARATUS FOR A CHEMICAL VAPOR DEPOSITION REACTOR
#150Methods and apparatus for a chemical vapor deposition reactor
#151SEMICONDUCTOR WAFER
#152Method for constructing a phase conjugate mirror
#153High Quality Single Crystal and Method of Growing the Same
#154Crystal growth apparatus and method
#155Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer
#156Si-Doped GaAs Single Crystal Ingot and Process for Producing the Same, and Si-Doped GaAs Single Crystal Wafer Produced From Si-Doped GaAs Single Crystal Ingot
#157Method for Growing Thin Semiconductor Ribbons
#158Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystal
#159GaAs semiconductor substrate and fabrication method thereof
#160Low etch pit density (EPD) semi-insulating GaAs wafers
#161Method, system, and apparatus for doping and for multi-chamber high-throughput solid-phase epitaxy deposition process
#162Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal
#163Method for manufacturing a SOI substrate associating silicon based areas and GaAs based areas
#164Crystal growth crucible
#165Nanostructure arrays and methods for forming same
#166System and method for crystal growing
#167High Flow GaCl3 Delivery
#168System and method for crystal growing
#169Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal wafer
#170Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystal
#171Vessel for growing a compound semiconductor single crystal, compound semiconductor single crystal, and process for fabricating the same
#172Method of making a substrate structure with enhanced surface area
#173Apparatus and method for reducing impurities in a semiconductor material
#174Semiconductive GaAs wafer and method of making the same
#175Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor
#176Organometallic compounds
#177Notched compound semiconductor wafer
#178Notched compound semiconductor wafer
#179High quality single crystal and method of growing the same
#180Si-doped GaAs single crystal substrate
#181Notched compound semiconductor wafer
#182GaInP / GaAs / Si triple junction solar cell enabled by wafer bonding and layer transfer
#183Method for fabricating a compound semiconductor epitaxial wafer
#184Method of growing semiconductor nanowires with uniform cross-sectional area using chemical vapor deposition
#185Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace
#186Growing smooth semiconductor layers
#187Method of growing III-V compound semiconductor layer, substrate product, and semiconductor device
#188Molecular beam epitaxy growth apparatus and method of controlling same
#189Doping-assisted defect control in compound semiconductors
#190Gallium arsenide single crystal and preparation method thereof
#191Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment
#192Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment
#193Optimized Heteroepitaxial growth of semiconductors
#194Continuous system for fabricating multilayer heterostructures via hydride vapor phase epitaxy
#195Transfer printing an epitaxial layer to a read/write head to form an integral laser