ClassID:

121335

C30B29/44 - CPC Classification

Classification description:

Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape; Inorganic compounds or compositions; AB compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi Gallium phosphide

Recent Application in this class:
#1
20240352624
2024-10-24

APPARATUS AND METHOD FOR SYNTHESIZING AND CONTINUOUSLY GROWING PHOSPHIDE IN MAGNETIC FIELD IN IMMERSION FASHION

#2
20240184015
2024-06-06

METHOD OF PRODUCING LARGE GaAs AND GaP INFRARED WINDOWS

#3
20240183075
2024-06-06

Method of producing large EMI shielded GaAs and GaP infrared windows

#4
20240183065
2024-06-06

Method of producing large GaAs and GaP infrared windows

#5
20230352302
2023-11-02

Optimized heteroepitaxial growth of semiconductors

#6
20230148397
2023-05-11

Optimized heteroepitaxial growth of semiconductors

#7
20230139650
2023-05-04

Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment

#8
20230137113
2023-05-04

Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment

#9
20230095501
2023-03-30

Optimized heteroepitaxial growth of semiconductors

#10
20230090724
2023-03-23

Optimized heteroepitaxial growth of semiconductors

#11
20230045019
2023-02-09

Optimized Heteroepitaxial Growth of Semiconductors

#12
20230042736
2023-02-09

Optimized Heteroepitaxial Growth of Semiconductors

#13
20230042689
2023-02-09

Optimized Heteroepitaxial Growth of Semiconductors

#14
20230038745
2023-02-09

Optimized Heteroepitaxial Growth of Semiconductors

#15
20230033788
2023-02-02

Optimized heteroepitaxial growth of semiconductors

#16
20220267927
2022-08-25

QPM STRUCTURES BASED ON OPTIMIZED OP-GaAs TEMPLATES WITHOUT MBE ENCAPSULATING LAYER

#17
20220267925
2022-08-25

Optimized heteroepitaxial growth of semiconductors

#18
20220073351
2022-03-10

Layered group III-V compound and nanosheet containing phosphorus, and electrical device using the same

#19
20200255977
2020-08-13

Composite nitride-based film structure and method for manufacturing same

#20
20200243709
2020-07-30

METHOD FOR PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR CHIP, AND OPTOELECTRONIC SEMICONDUCTOR CHIP

#21
20200157704
2020-05-21

Method for carrying out phosphide in-situ injection synthesis by carrier gas

#22
20190164753
2019-05-30

Method for fabricating InGaP epitaxial layer by metal organic chemical vapor deposition (MOCVD)

#23
20170183793
2017-06-29

Heteroepitaxial growth of orientation-patterned materials on orientation-patterned foreign substrates

#24
20160053404
2016-02-25

CONTROLLABLE OXYGEN CONCENTRATION IN SEMICONDUCTOR SUBSTRATE

#25
20140230720
2014-08-21

Direct band gap wurtzite semiconductor nanowires

#26
20140037258
2014-02-06

Fabrication of low-loss, light-waveguiding, orientation-patterned semiconductor structures

#27
20120112135
2012-05-10

Method and apparatus for producing semiconductor crystal, and semiconductor crystal

#28
20100276709
2010-11-04

Method for manufacturing compound semiconductor substrate, compound semiconductor substrate and light emitting device

#29
20100263707
2010-10-21

BASE STRUCTURE FOR III-V SEMICONDUCTOR DEVICES ON GROUP IV SUBSTRATES AND METHOD OF FABRICATION THEREOF

#30
20100237366
2010-09-23

Method for manufacturing light emitting device and light emitting device

#31
20100151661
2010-06-17

Nanostructures formed of branched nanowhiskers and methods of producing the same

#32
20060057360
2006-03-16

Nanostructures formed of branched nanowhiskers and methods of producing the same

#33
17119131
2022-07-19

Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment

#34
17119079
2022-12-27

Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment

#35
17118848
2022-07-12

Optimized Heteroepitaxial growth of semiconductors

#36
15797683
2019-01-29

Continuous system for fabricating multilayer heterostructures via hydride vapor phase epitaxy