ClassID:

171716

G01R31/261 - CPC Classification

Classification description:

Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere; Testing of individual semiconductor devices; Circuits therefor for testing bipolar transistors for measuring break-down voltage or punch through voltage therefor

Recent Application in this class:
#1
20250123317
2025-04-17

TEST CIRCUIT AND TESTING METHOD

#2
20230113109
2023-04-13

Test method

#3
20220003807
2022-01-06

IGBT module reliability evaluation method and device based on bonding wire degradation

#4
20200403610
2020-12-24

Serial IGBT voltage equalization method and system based on auxiliary voltage source

#5
20180354384
2018-12-13

Double-pulse test systems and methods

#6
20180188311
2018-07-05

Method of testing semiconductor devices and system for testing semiconductor devices

#7
20180088170
2018-03-29

Evaluation apparatus including a plurality of insulating portions surrounding a probe and semiconductor device evaluation method based thereon

#8
20180017612
2018-01-18

Method for determining a deterioration of power semiconductor modules as well as a device and circuit arrangement

#9
20150316602
2015-11-05

Apparatus and method for monitoring operation of an insulated gate bipolar transistor

#10
20150276848
2015-10-01

Examination device and examination method

#11
20150042373
2015-02-12

Semiconductor device

#12
20140368232
2014-12-18

Insulated gate bipolar transistor failure mode detection and protection system and method

#13
20130106453
2013-05-02

Jig for use in semiconductor test and method of measuring breakdown voltage by using the jig

#14
20120268138
2012-10-25

Avalanche breakdown test apparatus

#15
20120153977
2012-06-21

Test apparatus

#16
20110279142
2011-11-17

Time dependent dielectric breakdown (TDDB) test structure of semiconductor device and method of performing TDDB test using the same