ClassID:

199471

G11C11/2277 - CPC Classification

Classification description:

Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements; Auxiliary circuits Verifying circuits or methods

Recent Application in this class:
#1
20260120742
2026-04-30

DISTURBANCE-RESILIENT MEMORY ARCHITECTURE WITH INDEPENDENT PASS CONTROL FOR NON-VOLATILE TRANSISTOR ARRAYS

#2
20260064510
2026-03-05

METHODS FOR ACTIVITY-BASED MEMORY MAINTENANCE OPERATIONS AND MEMORY DEVICES AND SYSTEMS EMPLOYING THE SAME

#3
20250366073
2025-11-27

FERROELECTRIC TRANSISTOR AND METHOD OF OPERATING THE SAME

#4
20250364029
2025-11-27

OPERATION METHOD OF FERROELECTRIC MEMORY

#5
20250029647
2025-01-23

NONVOLATILE MEMORY DEVICE, STORAGE DEVICE HAVING THE SAME, AND OPERATING METHOD THEREOF

#6
20240202056
2024-06-20

METHODS FOR ACTIVITY-BASED MEMORY MAINTENANCE OPERATIONS AND MEMORY DEVICES AND SYSTEMS EMPLOYING THE SAME

#7
20230298651
2023-09-21

Data processing method, data processing circuit, and computing apparatus

#8
20230144541
2023-05-11

Methods for activity-based memory maintenance operations and memory devices and systems employing the same

#9
20230041784
2023-02-09

Integrated assemblies having ferroelectric transistors and methods of forming integrated assemblies

#10
20220406356
2022-12-22

Memory system configured to perform a reset on one or more non-volatile memory cells upon transitioning power states

#11
20220262422
2022-08-18

Memory device and method having a control circuit configured to acquire information on a state of a control target, causes the control target to execute a read and write operation based on the state

#12
20220093152
2022-03-24

Memory device

#13
20220093151
2022-03-24

Semiconductor memory device

#14
20220093149
2022-03-24

Semiconductor storage device

#15
20210366530
2021-11-25

Ferroelectric random-access memory with ROMFUSE area having redundant configuration wordlines

#16
20200235294
2020-07-23

Tunable resistive element

#17
20200234752
2020-07-23

Method for testing a memory device

#18
20200201698
2020-06-25

Methods for activity-based memory maintenance operations and memory devices and systems employing the same

#19
20190267067
2019-08-29

Selector threshold compensation

#20
20190198111
2019-06-27

Semiconductor storage device

#21
20190019545
2019-01-17

Dual mode memory array security apparatus, systems and methods

#22
20180294025
2018-10-11

Compensating for variations in selector threshold voltages

#23
20180122453
2018-05-03

Optimal write method for a ferroelectric memory

#24
20170249983
2017-08-31

Non-volatile ferroelectric memory cells with multilevel operation

#25
20170017546
2017-01-19

Dynamic enabling of redundant memory cells during operating life

#26
20170011790
2017-01-12

Dual mode memory array security apparatus, systems and methods

#27
20160358640
2016-12-08

Ferroelectric memory expansion for firmware updates

#28
20120170348
2012-07-05

Ferroelectric memory write-back

#29
20120147654
2012-06-14

Ferroelectric random access memory with single plate line pulse during read

#30
17510956
2022-11-22

Memory device, memory cell arrangement, and methods thereof