199512 ⎘
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger; Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
SRAM arrays and methods of manufacturing same
#2SRAM arrays and methods of manufacturing same
#3SRAM arrays and methods of manufacturing same
#4SRAM arrays and methods of manufacturing same
#5Bipolar logic gates on MOS-based memory chips
#6Bipolar logic gates on MOS-based memory chips
#7Low power transient voltage collapse apparatus and method for a memory cell