199522 ⎘
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
Magnetic tunnel junction cell adapted to store multiple digital values
#302Resistive memory
#303Method for reading memory cell
#304METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS
#305Nanowire and memory device using it as a medium for current-induced domain wall displacement
#306Non-volatile memory cell stack with dual resistive elements
#307Multi-bit STRAM memory cells
#308Method and apparatus for increasing the reliability of an access transitor coupled to a magnetic tunnel junction (MTJ)
#309Bio-sensor with hard-direction field
#310Multilevel Nonvolatile Memory via Dual Polarity Programming
#311Pipeline sensing using voltage storage elements to read non-volatile memory cells
#312Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
#313Method and system for coding and read out of information in a microscopic cluster comprising coupled functional islands
#314Thermally assisted multi-bit MRAM
#315Method of forming a magnetic tunnel junction device
#316Memory Device with adaptive capacity
#317MAGNETIC STRUCTURE WITH MULTIPLE-BIT STORAGE CAPABILITIES
#318Magnetic Data Storage
#319High density spin torque three dimensional (3D) memory arrays addressed with microwave current
#320Resistive memory
#321Magnetoresistive effect device and magnetic memory
#322Thermally assisted multi-bit MRAM
#323Tri-state memory device and method
#324Storage apparatus including non-volatile SRAM
#325Multi-bit STRAM memory cells
#326High speed low power magnetic devices based on current induced spin-momentum transfer
#327Method and integrated circuit for determining the state of a resistivity changing memory cell
#328Giant magnetoresistance (GMR) memory device
#329Semiconductor memory device
#330Multi-layer magnetic random access memory using spin-torque magnetic tunnel junctions and method for write state of the multi-layer magnetic random access memory
#331Multilevel magnetic storage device
#332Magnetic tunnel junction cell including multiple vertical magnetic domains
#333Method of forming a magnetic tunnel junction device
#334MULTI-STATE SPIN-TORQUE TRANSFER MAGNETIC RANDOM ACCESS MEMORY
#335Semiconductor signal processing device
#336Multibit magnetic random access memory device
#337Magnetic tunnel junction cell including multiple magnetic domains
#338Integrated Circuit, Cell Arrangement, Method for Operating an Integrated Circuit and for Operating a Cell Arrangement, Memory Module
#339Information storage devices using magnetic domain wall movement and methods of operating the same
#340Integrated circuit, cell arrangement, method for manufacturing an integrated circuit and for reading a memory cell status, memory module
#341Thermally assisted magnetic write memory
#342Compound cell spin-torque magnetic random access memory
#343Memory accessing circuit and method
#344Magnetic random access memory, manufacturing method and programming method thereof
#345Method and apparatus for write enable and inhibit for high density spin torque three dimensional (3D) memory arrays
#346Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion
#347Magnetoresistive element and magnetic memory
#348Integrated Circuits, Method of Programming a Cell, Thermal Select Magnetoresistive Element, Memory Module
#349Method of controlling a magnetoresistive device using an electric field pulse
#350Magnetic memory device using domain structure and multi-state of ferromagnetic material
#351Magnetic memory cell with multiple-bit in stacked structure and magnetic memory device
#352MRAM cell with multiple storage elements
#353MAGNETORESISTIVE RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME
#354High speed low power magnetic devices based on current induced spin-momentum transfer
#355High Capacity Low Cost Multi-State Magnetic Memory
#356Low cost multi-state magnetic memory
#357Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials
#358Magnetic random access memory and write method thereof
#359Semiconductor memory device and data write and read methods of the same
#360Magnetic memory element and magnetic memory apparatus
#361Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM)
#362Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods
#363Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof
#364Multi-state thermally assisted storage
#365Magnetic multilayer device, method for producing such a device, magnetic field sensor, magnetic memory and logic gate using such a device
#366High density spin torque three dimensional (3D) memory arrays addressed with microwave current
#367Spin glass memory cell
#368High speed low power magnetic devices based on current induced spin-momentum transfer
#369Advanced multi-bit magnetic random access memory device
#370Magnetic device having perpendicular magnetization and interaction compensating interlayer
#371Tunneling magnetoresistive element, semiconductor junction element, magnetic memory and semiconductor light emitting element
#372Exchange-bias based multi-state magnetic memory and logic devices and magnetically stabilized magnetic storage
#373Multi-valued data recording spin injection magnetization reversal element and device using the element
#374Memory device and method for transforming between non-power-of-2 levels of multilevel memory cells and 2-level data bits
#375Spin memory with write pulse
#376Multi-bit spin memory
#377Multi-state sense amplifier
#378Multiple port resistive memory cell
#379Magnetoresistive memory cell
#380Mesoscopic Magnetic Body Having Circular Single Magnetic Domain Structure, its Production Method, and Magnetic Recording Device Using the Same
#381Spin based memory coupled to CMOS amplifier
#382Multi-bit magnetic memory device using spin-polarized current and methods of manufacturing and operating the same
#383Spin based magnetic sensor
#384High-bandwidth magnetoresistive random access memory devices
#385High capacity low cost multi-state magnetic memory
#386Magnetic memory devices using magnetic domain dragging
#387Multi-state thermally assisted storage
#388High-bandwidth magnetoresistive random access memory devices and methods of operation thereof
#389Nonvolatile semiconductor memory device
#390High speed low power annular magnetic devices based on current induced spin-momentum transfer
#391Method and structure for generating offset fields for use in MRAM devices
#392Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same
#393Magnetic random access memory
#394Thin film magnetic memory device storing program information efficiently and stably
#395Magnetic random access memory with stacked toggle memory cells having oppositely-directed easy-axis biasing
#396Magnetic cell and magnetic memory
#397Spin based sensor device
#398Memory cell and programmable logic having ferromagnetic structures exhibiting the extraordinary hall effect
#399Magnetic random access memory with memory cell stacks having more than two magnetic states
#400Spin based electronic device
#401Method and structure for generating offset fields for use in MRAM devices
#402Multi-sensing level MRAM structure with different magneto-resistance ratios
#403Spin based device with low transmission barrier
#404Magnetic cell and magnetic memory
#405Multi bits flash memory device and method of operating the same
#406Magneto-resistive RAM having multi-bit cell array structure
#407Duty cycle correction circuit and a method for duty cycle correction in a delay locked loop using an inversion locking scheme
#408Advanced multi-bit magnetic random access memory device
#409Electronic memory with binary storage elements
#410Multi-sensing level MRAM structures
#411Multi-sensing level MRAM structures
#412High speed low power magnetic devices based on current induced spin-momentum transfer
#413Multi-state magnetoresistance random access cell with improved memory storage density
#414Read out scheme for several bits in a single MRAM soft layer
#415Magnetic cell and magnetic memory
#416Magnetic cell and magnetic memory
#417Multi-bit magnetic random access memory element
#418Multi-bit magnetic random access memory device
#419Magnetic memory device structure
#420Magnetic memory and recording method thereof
#421Magnetic random access memory
#422Thin film magnetic memory device storing program information efficiently and stably
#423Digital processing device with disparate magnetoelectronic gates
#424Multiple-bit magnetic random access memory cell employing adiabatic switching
#425Multi-bit MRAM device with switching nucleation sites
#426Magnetoelectronic memory element with inductively coupled write wires
#427Tunneling magnetoresistance device semiconductor junction device magnetic memory and semiconductor light-emitting device
#428Electronic memory with tri-level cell pair
#429Logic-in-memory circuit using magnetoresistive element
#430Multi-stage per cell magnetoresistive random access memory
#431Magnetic field sensor using spin polarized current
#432Multi-bit magnetic memory cells
#433Method of operating a stacked spin based memory
#434Patterned multilevel perpendicular magnetic recording media
#435Hybrid semiconductor—magnetic spin based memory with low transmission barrier
#436Reference generator for multilevel nonlinear resistivity memory storage elements
#437Multi-sensing level MRAM structure with different magnetoresistance ratios
#438Magnetic memory and method of operation thereof
#439Magnetic spin based memory with semiconductor selector
#440Magnetic spin based memory with inductive write lines
#441Ferromagnetic layer compositions and structures for spin polarized memory devices, including memory devices
#442Method of writing to a multi-state magnetic random access memory cell
#443Magnetic memory element utilizing spin transfer switching and storing multiple bits
#444High speed low power magnetic devices based on current induced spin-momentum transfer
#445Magnetic memory device and manufacturing method thereof
#446Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device
#447MRAM read and write methods using an incubation delay interval
#448Multi-state memory device and method for adjusting memory state characteristics of the same
#449Differential spin orbit torque magnetic random access memory (SOT-MRAM) cell structure and array
#450Inductive spin-orbit torque device and method for fabricating the same
#451Word line overdrive in memory and method therefor
#452Method and apparatus for storing data in a reference layer in magnetoresistive memory cells
#453Magnetic memory having ROM-like storage and method therefore
#454Dynamic control of spin states in interacting magnetic elements