199522 ⎘
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
MAGNETORESISTIVE MEMORY DEVICES INCLUDING DUAL FREE LAYERS AND METHODS FOR MAKING AND OPERATING THE SAME
#2MAGNETORESISTIVE MEMORY DEVICES INCLUDING DUAL FREE LAYERS AND METHODS FOR MAKING AND OPERATING THE SAME
#3In-Memory AI Inference with Multi-state Weight based on Vertical Domain Control
#4MEMORY DEVICES, CIRCUITS AND METHODS OF ADJUSTING A SENSING CURRENT FOR THE MEMORY DEVICE
#5HIERARCHICAL MEMORY ARCHITECTURE INCLUDING ON-CHIP MULTI-BANK NON-VOLATILE MEMORY WITH LOW LEAKAGE AND LOW LATENCY
#6Programming techniques for polarity-based memory cells
#7MEMORY DEVICES, CIRCUITS AND METHODS OF ADJUSTING A SENSING CURRENT FOR THE MEMORY DEVICE
#8SPIN-ORBIT-TORQUE (SOT) MRAM WITH DOUBLED LAYER OF SOT METAL
#9SYSTEMS AND METHODS FOR READING MULTI-BIT MRAM CELLS
#10MAGNONIC ACTIVE RING MEMORY AND LOGIC
#11Multiferroic memory with piezoelectric layers and related methods
#12Semiconductor circuits and devices based on low-energy consumption semiconductor structures exhibiting multi-valued magnetoelectric spin hall effect
#13Magnetic heterojunction structure and method for controlling and achieving logic and multiple-state storage functions
#14Programming techniques for polarity-based memory cells
#15Concurrent multi-bit self-referenced read of programmable resistance memory cells in cross-point array
#16Concurrent write to programmable resistance memory cells in cross-point array
#17Synthetic antiferromagnetic material and multibit memory using same
#18Thin film molecular memory
#19Concurrent multi-bit access in cross-point array
#20Semiconductor storage device having magnetoresistive memories with a different coercive force
#21Two-bit magnetoresistive random-access memory cell
#22Programming techniques for polarity-based memory cells
#23Semiconductor structure and fabrication method thereof
#24Multistate magnetic memory element using metamagnetic materials
#25Back-side memory element with local memory select transistor
#26Mixed mode multiply and accumulate array
#27Method and system to improve read reliability in memory devices
#28Magnetic element
#29Semiconductor device and semiconductor logic device
#30Image sensors for distance measurement
#31Spin-orbit torque device and method for operating a spin-orbit torque device
#32Memory element for weight update in a neural network
#33Memory device and a method for forming the memory device
#34REALIZATION OF BINARY NEURAL NETWORKS IN NAND MEMORY ARRAYS
#35Multi-state memory and method for manufacturing the same
#36Information processing device
#37Magnetic element
#38Switching skyrmions with VCMA/electric field for memory, computing and information processing
#39Image sensors for distance measurement
#40Method, system and device for magnetic memory
#41Magnetic domain wall type analog memory element, magnetic domain wall type analog memory, nonvolatile logic circuit, and magnetic neuro-element
#42Fabricating embedded magnetoresistive random access memory device with v-shaped magnetic tunnel junction profile
#43Segmented reference trimming for memory arrays
#44Methods and systems for compensating for degradation of resistive memory device
#45Realization of binary neural networks in NAND memory arrays
#46Differential non-volatile memory cell for artificial neural network
#47Magnetic wall utilization-analog memory element and magnetic wall utilization analog memory
#48Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
#49Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
#50Read-out techniques for multi-bit cells
#51Multi-level magnetic tunnel junction (MTJ) devices including mobile magnetic skyrmions or ferromagnetic domains
#52Memory cell, memory array, method of forming and operating memory cell
#53Multistate magnetic memory element using metamagnetic materials
#54Resistive memory device having reduced chip size and operation method thereof
#55Resistance-based memory compiler
#56Storage device, manufacturing method therefor, and storage apparatus
#57Information processing apparatus and semiconductor integrated circuit device
#58Back-side memory element with local memory select transistor
#59Memory subsystem in CNN based digital IC for artificial intelligence
#60MLC based magnetic random access memory used in CNN based digital IC for AI
#61DATA STORAGE DEVICE AND OPERATING METHOD THEREOF
#62Data storage in synthetic antiferromagnets included in magnetic tunnel junctions
#63Semiconductor device and semiconductor logic device
#64Memory device for matrix-vector multiplications
#65Minimizing two-step and hard state transitions in multi-level STT-MRAM devices
#66Resistive memory device including a reference cell and method of controlling a reference cell to identify values stored in memory cells
#67BURST LENGTH DEFINED PAGE SIZE AND RELATED METHODS
#68Resistive memory device having reduced chip size and operation method thereof
#69Switching skyrmions with VCMA/electric field for memory, computing and information processing
#70Multi-bit-per-cell memory device based on the unidirectional spin hall magnetoresistance
#71Magnetic diode in artificial magnetic honeycomb lattice
#72Random number generator by superparamagnetism
#73Back-side memory element with local memory select transistor
#74Oscillator and calculating device
#75Methods of using embedded disconnected circuits in magnetic storage media of data storage devices
#76Embedded disconnected circuits in magnetic storage media of data storage devices
#77Magnetic wall utilization spin MOSFET and magnetic wall utilization analog memory
#78Magnetic wall utilization-analog memory element and magnetic wall utilization analog memory
#79Memory cells with enhanced tunneling magnetoresistance ratio, memory devices and systems including the same
#80Secure off-chip MRAM
#81Word line overdrive in memory and method therefor
#82Resistive memory accelerator
#83Fabrication methods of memory subsystem used in CNN based digital IC for AI
#84MLC based magnetic random access memory used in CNN based digital IC for AI
#85Storage device, manufacturing method therefor, and storage apparatus
#86Data storage in synthetic antiferromagnets included in magnetic tunnel junctions
#87Electronic device, topological insulator, fabrication method of topological insulator and memory device
#88Resistance-based memory compiler
#893D magnetic memory device based on pure spin currents
#90Nonvolatile memory device having ferroelectric memory element and resistive memory element and method of writing signal in nonvolatile memory device having the same
#91Semiconductor device and semiconductor logic device
#92Logic gate module for performing logic functions comprising a MRAM cell and method for operating the same
#93Methods of fabricating magnetic memory devices
#94MAGNONIC HOLOGRAPHIC MEMORY AND METHODS
#95Memory device for matrix-vector multiplications
#96Magnetoresistance effect element including a recording layer with perpendicular anisotropy and a bias layer comprised of an antiferromagnetic material, magnetic memory device, manufacturing method, operation method, and integrated circuit
#97Multibit self-reference thermally assisted MRAM
#98Multi-state magnetic memory device
#99Word line auto-booting in a spin-torque magnetic memery having local source lines
#100Magnetic junctions having elongated free layers
#101Semiconductor memory device
#102Magnetic element and memory device
#103Multi-bit MRAM cell and method for writing and reading to such MRAM cell
#104Structure for thermally assisted MRAM
#105Electronic device
#106Magnetic memory element and memory device
#107Random number generator by superparamagnetism
#108Magnetic shielding for MTJ device or bit
#109Multi-port non-volatile memory
#110Spin electronic memory, information recording method and information reproducing method
#111High capacity low cost multi-state magnetic memory
#112Resistive memory system and method of operating the resistive memory system
#113Resistive memory device, resistive memory system, and method of operating the resistive memory system
#114Data processing system having combined memory block and stack package
#115Apparatus and method to optimize STT-MRAM size and write error rate
#116Information storage apparatus and method
#117Word line auto-booting in a spin-torque magnetic memory having local source lines
#118Multi-level magnetic recording apparatus utilizing cooperative magnetization dynamics induced by spin-torque oscillator
#119Non-volatile SRAM with multiple storage states
#120Resistance change memory
#121Resistive memory device and method of operating the same
#122Cross-point memory device including multi-level cells and operating method thereof
#123Resistance change memory
#124Resistive memory device and operating method
#125Storage element and memory
#126Method and apparatus for writing to a magnetic tunnel junction (MTJ) by applying incrementally increasing voltage level
#127Magnonic holographic memory and methods
#128Resistive memory device with temperature compensation, resistive memory system, and operating method thereof
#129Semiconductor storage device
#130STTMRAM element having multiple perpendicular MTJs coupled in series
#131Magnetic memory, spin element, and spin MOS transistor
#132High capaciy low cost multi-state magnetic memory
#133Multibit self-reference thermally assisted MRAM
#134Methods of producing and controlling tunneling electroresistance and tunneling magnetoresistance in a multiferroic tunnel junction
#135Multibit self-reference thermally assisted MRAM
#136Resistive memory device and operation
#137Electronic device
#138Resistive memory device and method of operating the same
#139Semiconductor memory device
#140Memory chip, memory system, and method of accessing the memory chip
#141Control of memory device reading based on cell resistance
#142On-chip resistance measurement circuit and resistive memory device including the same
#143Current induced spin-momentum transfer stack with dual insulating layers
#144Non-volatile SRAM with multiple storage states
#145Voltage-switched magnetic random access memory (MRAM) and method for using the same
#146Structure for thermally assisted MRAM
#147Electronic device
#148Thermally assisted multi-level MRAM cell and method for writing a plurality of bits in the MRAM cell
#149Magnetic random access memory cell with a dual junction for ternary content addressable memory applications
#150Resistance change memory
#151Resistance change memory
#152Word line auto-booting in a spin-torque magnetic memory having local source lines
#153Burst length defined page size
#154NAND array comprising parallel transistor and two-terminal switching device
#155Magnetic device
#156Decreased switching current in spin-transfer torque memory
#157Spintronic circuit and method of operation therefore
#158MULTI-LEVEL CELL DESIGNS FOR HIGH DENSITY LOW POWER GSHE-STT MRAM
#159Method and system for providing multiple self-aligned logic cells in a single stack
#160Random number generator by superparamagnetism
#161State determination in resistance variable memory
#162Nonvolatile semiconductor memory device
#163Magnetoresistive random access memory (MRAM) differential bit cell and method of use
#164Multiple-bits-per-cell voltage-controlled magnetic memory
#165Multi-level cells and method for using the same
#166Semiconductor storage device
#167Magnetic memory and method of manufacturing the same
#168Thermally-assisted magnetic writing device
#169Semiconductor memory device
#170Memory and logic device and methods for performing thereof
#171Memory device
#172Storage element and memory
#173Perpendicular magnetic random access memory (MRAM) device with reference cell and method for using same
#174Method of forming a magnetic tunnel junction device
#175Stackable non-volatile memory
#176Resistive non-volatile memory
#177Electronic device
#178Electronic device and method for operating the same
#179Bipolar spin-transfer switching
#180Magneto-electric voltage controlled spin transistors
#181Apparatus for initializing perpendicular MRAM device
#182Resistive memory device with word lines coupled to multiple sink transistors
#183High capacity low cost multi-state magnetic memory
#184Method and apparatus for reading variable resistance memory elements
#185Frequency resistance access magnetic memory
#186Magnetoresistive random access memory (MRAM) differential bit cell and method of use
#187Multilevel magnetic element
#188Multiple bit nonvolatile memory based on current induced domain wall motion in a nanowire magnetic tunnel junction
#189Nonvolatile memory device using variable resistance material and method for driving the same
#190Nonvolatile memory device using resistance material and method of driving the nonvolatile memory device
#191Circuit arrangement and method of forming the same
#192Multibit cell of magnetic random access memory with perpendicular magnetization
#193Method and apparatus of probabilistic programming multi-level memory in cluster states of bi-stable elements
#194Decreased switching current in spin-transfer torque memory
#195Read-disturbance-free nonvolatile content addressable memory (CAM)
#196Low cost programmable multi-state device
#197Multi-level memory cell using multiple magnetic tunnel junctions with varying MGO thickness
#198Magnetic enhancement layer in memory cell
#199Magnetic resistance memory apparatus having multi levels and method of driving the same
#200Magnetic resistance memory apparatus having multi levels and method of driving the same
#201Magnentic resistance memory apparatus having multi levels and method of driving the same
#202Perpendicular magnetic random access memory (MRAM) device with a stable reference cell
#203Multi-state spin-torque transfer magnetic random access memory
#204High capaciy low cost multi-state magnetic memory
#205Multi-free layer MTJ and multi-terminal read circuit with concurrent and differential sensing
#206Initialization method of a perpendicular magnetic random access memory (MRAM) device
#207Apparatuses and methods for reading and/or programming data in memory arrays having varying available storage ranges
#208MULTI-BIT MAGNETIC TUNNEL JUNCTION MEMORY AND METHOD OF FORMING SAME
#209Self-referenced MRAM cell and method for writing the cell using a spin transfer torque write operation
#210Magnetoelectric memory
#211Magnetic memory device and reading method of magnetic memory device
#212Method and system for providing magnetic junctions having improved characteristics
#213Memory system and memory managing method thereof
#214Magnetoresistance Device and Memory Device Including the Magnetoresistance Device
#215Combined memory block and data processing system having the same
#216Multi-bit spin-momentum-transfer magnetoresistence random access memory with single magnetic-tunnel-junction stack
#217Magnetic random access memory devices including heating straps
#218Magnetic random access memory devices including shared heating straps
#219Read architecture for MRAM
#220Method of forming a magnetic tunnel junction device
#221Memory device and method for manufacturing the same
#222Compound cell spin-torque magnetic random access memory
#223Semiconductor recording device
#224Magnetic memory, method of manufacturing the same, and method of driving the same
#225Magnetic tunnel junction and spin transfer torque random access memory having the same
#226Memory array including magnetic random access memory cells and oblique field lines
#227SEMICONDUCTOR DEVICE
#228Storage element and storage device
#229Magnetic resistance memory apparatus having multi levels and method of driving the same
#230Initialization method of a perpendicular magnetic random access memory (MRAM) device with a stable reference cell
#231Perpendicular magnetic random access memory (MRAM) device with a stable reference cell
#232Method and apparatus for increasing the reliability of an access transitor coupled to a magnetic tunnel junction (MTJ)
#233Resistive memory
#234Memory device with adaptive capacity
#235Magnetic random access memory devices including multi-bit cells
#236Magnetic random access memory devices including multi-bit cells
#237Near field optical recording system having negative index of refraction structure
#238Memory chip, memory system, and method of accessing the memory chip
#239Multibit cell with synthetic storage layer
#240Bipolar spin-transfer switching
#241Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistor
#242Non-volatile memory device and sensing method thereof
#243Magnetic memory element, magnetic memory and initializing method
#244Magnetic tunnel junction with free layer having exchange coupled magnetic elements
#245Magnetic random access memory cell with a dual junction for ternary content addressable memory applications
#246Non-sequential encoding scheme for multi-level cell (MLC) memory cells
#247Magneto-resistive random access memory (MRAM) having a plurality of concentrically aligned magnetic tunnel junction layers and concentrically aligned upper electrodes over a lower electrode
#248Data storage methods and devices
#249Method and apparatus for writing to a magnetic tunnel junction (MTJ) by applying incrementally increasing voltage level
#250Thermally assisted multi-bit MRAM
#251Multi-bit memory with selectable magnetic layer
#252Nonvolatile semiconductor memory and control method thereof
#253Magnetic random access memory devices configured for self-referenced read operation
#254Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
#255Method and system for providing multiple logic cells in a single stack
#256Multibit cell of magnetic random access memory with perpendicular magnetization
#257Multibit magnetic random access memory cell with improved read margin
#258Generating a temperature-compensated write current for a magnetic memory cell
#259Apparatus, system, and method for matching patterns with an ultra fast check engine
#260Magnetic Memory Cell With Multi-Level Cell (MLC) Data Storage Capability
#261Flux programmed multi-bit magnetic memory
#262Multilevel magnetic element
#263Multi-bit magnetic memory with independently programmable free layer domains
#264Semiconductor signal processing device
#265Compound cell spin-torque magnetic random access memory
#266High speed low power magnetic devices based on current induced spin-momentum transfer
#267Multi-bit memory with selectable magnetic layer
#268Spin torque transfer memory cell structures and methods
#269Spin torque transfer memory cell structures and methods
#270Multi-bit STRAM memory cells
#271Resistive memory
#272High-capacity low cost multi-state magnetic memory
#273High capacity low cost multi-state magnetic memory
#274Methods and apparatus for soft data generation for memory devices
#275Low cost multi-state magnetic memory
#276Low cost multi-state magnetic memory
#277Non-volatile logic circuit
#278Composite resistance variable element and method for manufacturing the same
#279Method and apparatus of probabilistic programming multi-level memory in cluster states of bi-stable elements
#280MAGNETIC MEMORY DEVICES AND SYSTEMS
#281Magnetic memory device and magnetic random access memory
#282Method and apparatus for programming a magnetic tunnel junction (MTJ)
#283Thermally assisted multi-bit MRAM
#284Methods and apparatus for soft data generation for memory devices using decoder performance feedback
#285Perpendicular magnetic tunnel junction structure
#286Methods and apparatus for soft data generation for memory devices based using reference cells
#287Spin-torque based memory device with read and write current paths modulated with a non-linear shunt resistor
#288Memory devices including multi-bit memory cells having magnetic and resistive memory elements and related methods
#289DATA STORAGE DEVICE
#290Magnetic memory element, driving method for same, and nonvolatile storage device
#291Methods and apparatus for soft data generation for memory devices based on performance factor adjustment
#292Spin-valve recording element and storage device
#293Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
#294Domain wall motion element and magnetic random access memory
#295Compound cell spin-torque magnetic random access memory
#296Multi-state memory and multi-functional devices comprising magnetoplastic or magnetoelastic materials
#297Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion
#298Method and system for providing dual magnetic tunneling junctions usable in spin transfer torque magnetic memories
#299Spin valve element, method of driving the same, and storage device using the same
#300Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion