199578 ⎘
Digital stores characterised by the use of storage elements not covered by groups , , or using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
Data recording device comprising inclined carbon nanotubes and method for the production thereof
#302Bistable latch circuit implemented with nanotube-based switching elements
#303Method of fabricating a multi-bit electro-mechanical memory device
#304Methods and apparatus for using a configuration array similar to an associated data array
#305Logic devices comprising carbon nanotube patterns
#306DNA nanocage by self-organization of DNA and process for producing the same, and DNA nanotube and molecule carrier using the same
#307CARBON NANOTUBE TRANSISTOR HAVING LOW FRINGE CAPACITANCE AND LOW CHANNEL RESISTANCE
#308Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
#309Device selection circuitry constructed with nanotube ribbon technology
#310Sensor platform using a non-horizontally oriented nanotube element
#311Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
#312Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements
#313Nonvolatile resistive memories having scalable two-terminal nanotube switches
#314Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
#315Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
#316Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
#317Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric
#318Integrated Circuit Memory Devices and Capacitors Having Carbon Nanotube Electrodes
#319Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
#320Non-volatile switching and memory devices using vertical nanotubes
#321Photon-based memory device
#322Memory devices using carbon nanotube (CNT) technologies
#323Methods of forming nanoscopic wire-based devices and arrays
#324Method for producing a catalyst support and compositions thereof
#325Fullerene nanotube compositions
#326Field effect devices having a gate controlled via a nanotube switching element
#327Memory device in which data is written or read by a switching operation of a bit line that is inserted into a trench formed between a plurality of word lines
#328Memory element using reversible switching between SP2 and SP3 hybridized carbon
#329Electromechanical memory array using nanotube ribbons and method for making same
#330Method for purification of as-produced fullerene nanotubes
#331FULLERENE NANOTUBE COMPOSITIONS
#332Isolation structure for deflectable nanotube elements
#333Random access memory including nanotube switching elements
#334Nanoscale wire coding for stochastic assembly
#335Nanowire electromechanical switching device, method of manufacturing the same and electromechanical memory device using the nanowire electromechanical switching device
#336Crossbar control circuit
#337MECHANICALLY ACTUATED NANOTUBE SWITCHES
#338Methods of fabricating vertical carbon nanotube field effect transistors for arrangement in arrays and field effect transistors and arrays formed thereby
#339Vertical electromechanical memory devices and methods of manufacturing the same
#340Crossbar-array designs and wire addressing methods that tolerate misalignment of electrical components at wire overlap points
#341Memory cell comprising a molecular transistor, device comprising a plurality of such cells and method for using same
#342Nano-Enabled Memory Devices and Anisotropic Charge Carrying Arrays
#343Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
#344Two-terminal nanotube devices and systems and methods of making same
#345Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
#346NANO-electronics
#347Nanoscale wires and related devices
#348Organic memory devices including organic material and fullerene layers
#349Free-standing electrostatically-doped carbon nanotube device and method for making same
#350NANOSCOPIC WIRE-BASED DEVICES AND ARRAYS
#351Nanowire memory device and method of manufacturing the same
#352Electric device with nanowires comprising a phase change material
#353Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
#354Multiplexed assays using encoded solid supports
#355Nano-enabled memory devices and anisotropic charge carrying arrays
#356Mechanically actuated nanotube switches
#357Devices having horizontally-disposed nanofabric articles and methods of making the same
#358Manufacture of programmable crossbar signal processor
#359Nanomechanical switching device
#360Methods of bridging lateral nanowires and device using same
#361Magnetic switching element and signal processing device using the same
#362Storage elements using nanotube switching elements
#363Tri-state circuit using nanotube switching elements
#364Storage node, nonvolatile memory device, methods of fabricating the same and method of operating the nonvolatile memory device
#365Particle encapsulated nanoswitch
#366Nano-enabled memory devices and anisotropic charge carrying arrays
#367Memory having nanotube transistor access device
#368Nanoelectromechanical memory cells and data storage devices
#369Integrated circuit arrangement
#370Nonvolatile carbon nanotube memory device using multiwall carbon nanotubes and methods of operating and fabricating the same
#371SEU hardened latches and memory cells using programmable resistance devices
#372Nanoscopic wired-based devices and arrays
#373Phase change memory device using carbon nanotube and method for fabricating the same
#374Method of fabricating phase change RAM including a fullerene layer
#375Reconfigurable logic structures
#376Deletable nanotube circuit
#377Methods of nanotube films and articles
#378Mechanical memory device and method of manufacturing the same
#379Memory devices using carbon nanotube (CNT) technologies
#380Nanotube based nonvolatile memory device and a method of fabricating and operating the same
#381Self-assembly of molecules and nanotubes and/or nanowires in nanocell computing devices, and methods for programming same
#382Random access memory including nanotube switching elements
#383One-time programmable, non-volatile field effect devices and methods of making same
#384Memory array using mechanical switch, method for controlling the same, display apparatus using mechanical switch, and method for controlling the same
#385Method of transforming carbon nanotubes
#386Non-volatile electromechanical configuration bit array
#387Nanotube-based logic driver circuits
#388Multi-terminal electromechanical nanocsopic switching device with control and release electrodes
#389Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric
#390Metal-free silicon-molecule-nanotube testbed and memory device
#391Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
#392Nanotube based multi-level memory structure
#393Nanoscale shift register and signal demultiplexing using microscale/nanoscale shift registers
#394Shape memory device
#395Optically-configurable nanotube or nanowire semiconductor device
#396Variable capacitor single-electron transistor including a P-N junction gate electrode
#397Semiconductor memory device with memory cells, each having bit registering layer in addition to a memory layer and method of driving the same
#398Nanotube- and nanocrystal-based non-volatile memory
#399Nanotube-based switching elements and logic circuits
#400Magnetic switching element and signal processing device using the same
#401Process for modifying at least one electrical property of a nanotube or a nanowire and a transistor incorporating it
#402Phase change random access memory and method of operating the same
#403Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
#404Continuous fiber of fullerene nanotubes
#405Nano-elastic memory device and method of manufacturing the same
#406Nanoscopic wired-based devices and arrays
#407Method for producing self-assembled objects comprising fullerene nanotubes and compositions thereof
#408Switch element, memory element and magnetoresistive effect element
#409Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
#410Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
#411Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
#412Device selection circuitry constructed with nanotube technology
#413Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
#414Non-volatile switching and memory devices using vertical nanotubes
#415Method of making non-volatile field effect devices and arrays of same
#416Devices having vertically-disposed nanofabric articles and methods of making the same
#417Non-volatile memory with carbon nanotubes
#418Nanotube device structure and methods of fabrication
#419Nanotube- and nanocrystal-based non-volatile memory
#420Resistivity changing memory cell having nanowire electrode
#421Nano structure electrode design
#422Nano tube cell, and semiconductor device having nano tube cell and double bit line sensing structure
#423METAL OXIDE RESISTIVE MEMORY AND METHOD OF FABRICATING THE SAME
#424Nanotube based non-linear optics and methods of making same
#425Integrated displays using nanowire transistors
#426Tri-state circuit using nanotube switching elements
#427Switching element
#428Method of fabricating memory device utilizing carbon nanotubes
#429Memory arrays using nanotube articles with reprogrammable resistance
#430Non-volatile-shadow latch using a nanotube switch
#431Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
#432Sensor platform using a horizontally oriented nanotube element
#433Carbon nanotube memory cells having flat bottom electrode contact surface
#434Nanoscopic wire-based devices and arrays
#435Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
#436Electromechanical three-trace junction devices
#437Nanocrystal quantum dot memory devices
#438Non-volatile memory transistor with nanotube floating gate
#439Methods of forming nanoscopic wire-based devices and arrays
#440Large-area nanoenabled macroelectronic substrates and uses therefor
#441High density memory device
#442Nano memory, light, energy, antenna and strand-based systems and methods
#443Functionalized nanotubes
#444Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
#445Memory device for storing electric charge, and method for fabricating it
#446Fractal memory and computational methods and systems based on nanotechnology
#447Method to assemble structures from nano-materials
#448Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
#449Array-based architecture for molecular electronics
#450Graphitic nanotubes in luminescence assays
#451Optically controlled switching methods based upon the polarization of electromagnetic radiation incident upon carbon nanotubes and electrical-switch systems using such switch devices
#452Methods of forming integrated circuit devices having carbon nanotube electrodes therein
#453RF nanoswitch
#454Devices having vertically-disposed nanofabric articles and methods of making the same
#455Sensor platform using a non-horizontally oriented nanotube element
#456Multi bits flash memory device and method of operating the same
#457Hybrid memory array with single cycle access
#458Large-capacity magnetic memory using carbon nano-tube
#459Memory device having molecular adsorption layer
#460Nanoelectromechanical components
#461Wire structure, semiconductor device, MRAM, and manufacturing method of semiconductor device
#462Nanotube based multi-level memory structure
#463Optical information record medium
#464Integrated nanotube and field effect switching device
#465Nanowire optoelectric switching device and method
#466Conductive line for a semiconductor device using a carbon nanotube including a memory thin film and semiconductor device manufactured
#467Phosphorescent nanotube memory device
#468Storage elements using nanotube switching elements
#469Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cell
#470Memory element and memory device
#471Horizontal memory gain cells
#472Receiver circuit using nanotube-based switches and logic
#473Receiver circuit using nanotube-based switches and transistors
#474Methods of making electromechanical three-trace junction devices
#475Nanotube-based logic driver circuits
#476Nanotube-based transfer devices and related circuits
#477Memory cell, memory cell arrangement, patterning arrangement, and method for fabricating a memory cell
#478Nanotube-based switching elements with multiple controls
#479Method for forming an array of single-wall carbon nanotubes in an electric field and compositions thereof
#480Nano tube cell, and semiconductor device having nano tube cell and double bit line sensing structure
#481Use of electroactive monolayers in generating negative differential resistance behaviors and devices employing the same
#482Method for forming a patterned array of single-wall carbon nanotubes
#483Method for fractionating single-wall carbon nanotubes
#484Point contact array, not circuit, and electronic circuit using the same
#485Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
#486Data storage media
#487Nanotube relay device
#488Integrated circuit array
#489Data storage device including nanotube electron sources
#490Heating elements for a storage device
#491Nano-enabled memory devices and anisotropic charge carrying arrays
#492Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
#493Charge transfer complexes including an electron donor and an electron acceptor as basis of resistive memories
#494Capacitor with conducting nanostructure
#495Nanotube films and articles
#496Memory device using nanotube cells
#497Nano tube cell and memory device using the same
#498Vertical carbon nanotube field effect transistors and arrays
#499EEPROMS using carbon nanotubes for cell storage
#500Free-standing electrostatically-doped carbon nanotube device
#501Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
#502Non-volatile multibit memory cell and method of manufacturing thereof
#503Suspended gate single-electron device
#504Ultra-high capacitance device based on nanostructures
#505Magnetoresistive device and electronic device
#506Molecular switching device
#507Methods of bridging lateral nanowires and device using same
#508Microstructures
#509Annular magnetic nanostructures
#510Nanoscopic wire-based devices and arrays
#511Dna nanocage by self-organization of dna and process for producing the same, and dna nanotube and molecule carrier using the same
#512Large-area nanoenabled macroelectronic substrates and uses therefor
#513Nanoelectromechanical transistors and switch systems
#514Methods of nanotubes films and articles
#515Three-terminal field-controlled molecular devices
#516High-density recording media
#517Large-area nonenabled macroelectronic substrates and uses therefor
#518Method for forming an electrostatically-doped carbon nanotube device
#519Method of making non-volatile field effect devices and arrays of same
#520Magnetic storage medium and method for making same
#521Sensor platform using a non-horizontally oriented nanotube element
#522Field effect devices having a gate controlled via a nanotube switching element
#523Hybrid circuit having nanotube electromechanical memory
#524Field effect devices having a source controlled via a nanotube switching element
#525One-time programmable, non-volatile field effect devices and methods of making same
#526Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
#527Process for making bit selectable devices having elements made with nanotubes
#528Process for making byte erasable devices having elements made with nanotubes
#529Nanotube films and articles
#530Nanotube-on-gate FET structures and applications
#531Circuit arrays having cells with combinations of transistors and nanotube switching elements
#532Field effect devices having a drain controlled via a nanotube switching element
#533Multidentate ligand
#534Sensor platform using a horizontally oriented nanotube element
#535Uses of nanofabric-based electro-mechanical switches
#536Nanotube transistor device
#537Four terminal non-volatile transistor device
#538Photosensitive polymeric memory elements
#539Nanoscale heterojunctions and methods of making and using thereof
#540Non-volatile RAM cell and array using nanotube switch position for information state
#541NRAM bit selectable two-device nanotube array
#542Variable capacitor single-electron device
#543Nanotube device structure and methods of fabrication
#544Nanotube-based switching elements with multiple controls
#545Nanotube-based switching elements and logic circuits
#546Circuits made from nanotube-based switching elements with multiple controls
#547Nanotube-based switching elements
#548Isolation structure for deflectable nanotube elements
#549IC chip with nanowires
#550Electrode manufacturing method
#551Point contact array, not circuit, and electronic circuit comprising the same
#552Memory device and methods of using and making the device
#553Molecular structures comprising single wall carbon nanotubes
#554Non-volatile memory and forming method thereof
#555Portable and low-error DNA-based data storage
#556High density stacked CNT memory cube arrays with memory selectors