OPTICAL FILTER BASED ON LIGHT-MATTER COUPLING IN QUANTUM-CONFINED CAVITY SPACES

COMPLEX NANOSTRUCTURE FOR SORTING A PLURALITY OF ELECTRONS INTO A DISTRIBUTION

COMPLEX NANOSTRUCTURE FORMING A TRANSISTOR

Methods for Reading Resistive States of Resistive Change Elements

TECHNIQUES FOR BIDIRECTIONAL TRANSDUCTION OF QUANTUM LEVEL SIGNALS BETWEEN OPTICAL AND MICROWAVE FREQUENCIES USING A COMMON ACOUSTIC INTERMEDIARY

Resistive change element arrays

Three dimensional (3D) memories with multiple resistive change elements per cell and corresponding architectures for in-memory computing

Three dimensional (3D) memories with multiple resistive change elements per cell and corresponding architectures

Methods for accessing resistive change elements operable as antifuses

Techniques for bidirectional transduction of quantum level signals between optical and microwave frequencies using a common acoustic intermediary

OPTICAL FILTER BASED ON LIGHT-MATTER COUPLING IN QUANTUM-CONFINED CAVITY SPACES

Resistive change element arrays

OPTICALLY-ENABLED SERVER WITH CARBON NANOTUBES-BASED MEMORY

Techniques for transduction and storage of quantum level signals

Techniques for bidirectional transduction of quantum level signals between optical and microwave frequencies using a common acoustic intermediary

Methods for programing DDR compatible open architecture resistive change element arrays

Methods for characterizing nanotube formulations for nanotube fabrics with controlled surface roughness and degree of rafting

3D cross-bar nonvolatile memory

Machine Learning Processor Employing a Monolithically Integrated Memory System

Scalable nanotube fabrics and methods for making same

Methods for accessing 1-R resistive change element arrays

Nonvolatile nanotube switch elements using sidewall contacts

Techniques for transduction and storage of quantum level signals

Dynamic random access memory structure and method for preparing the same

Resistive change element arrays using a reference line

Nonvolatile nanotube memory arrays using nonvolatile nanotube blocks and cell selection transistors

Methods for forming nanotube fabrics with controlled surface roughness and degree of rafting

Methods for accessing resistive change elements in resistive change element arrays

Techniques for bidirectional transduction of quantum level signals between optical and microwave frequencies using a common acoustic intermediary

Resistive change element cells sharing selection devices

Two-terminal non-volatile memristor and memory

Nonvolatile nanotube switches with reduced switching voltages and currents

Method for programming 1-R resistive change element arrays

3D cross-bar nonvolatile memory

State-changeable device

Memory device

Double density nonvolatile nanotube switch memory cells

State-changeable device

Nonvolatile memory device including two-dimensional material and apparatus including the nonvolatile memory device

Ion-based nanoelectric memory

Stacked three-dimensional arrays of two terminal nanotube switching devices

3D cross-bar nonvolatile memory

Resistive change element arrays with in situ initialization

Nonvolatile nanotube switches and systems using same

Systems and methods for non-volatile flip flops

Two-terminal switching devices comprising coated nanotube elements

DDR compatible open array architectures for resistive change element arrays

Methods for programming 1-R resistive change element arrays

SRAM memory bit cell comprising n-TFET and p-TFET

Low porosity nanotube fabric articles

Methods for programming and accessing DDR compatible resistive change element arrays

Connectible nanotube circuit

Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture

Non-volatile composite nanoscopic fabric NAND memory arrays and methods of making same

Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks

Methods of forming nanotube films and articles

Resistive materials comprising mixed nanoscopic particles and carbon nanotubes

State-changeable device

Memory system

1-R resistive change element arrays using resistive reference elements

Assembly of vertically aligned nanotube arrays containing particles and application thereof

Resistive change element arrays using resistive reference elements

Heterostructure comprising a carbon nanomembrane

Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines

Method for dynamically accessing and programming resistive change element arrays

Semiconductor resistive memory devices including separately controllable source lines

Memory system

Phase change memory cell

Two-terminal switching device using a composite material of nanoscopic particles and carbon nanotubes

Memory devices including two-dimensional material, methods of manufacturing the same, and methods of operating the same

Scalable nanotube fabrics and methods for making same

Semiconductor device with PCM memory cells and nanotubes and related methods

Use of hydrocarbon nanorings for data storage

Memory cell with redundant carbon nanotube

Hybrid non-volatile memory device

Carbon nanotube memory cell with enhanced current control

Memory elements and cross point switches and arrays for same using nonvolatile nanotube blocks

System and method for integrating a single nanowire into a nanocircuit

Non-volatile storage system using opposite polarity programming signals for MIM memory cell

Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture

Carbon based nonvolatile cross point memory incorporating carbon based diode select devices and MOSFET select devices for memory and logic applications

Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same

Apparatus, storage device, switch and methods, which include microstructures extending from a support

Memory elements with relay devices

Switching materials comprising mixed nanoscopic particles and carbon nanotubes and methods of making and using the same

State changing device

3D nano-electro-mechanical multiple-state carbon nanotube device structures and methods of fabrication

Methods for forming a nanowire and apparatus thereof

Adaptive resistive device and methods thereof

Graphene-based memory devices and methods therefor

Nanotube based nanoelectromechanical device

Method and system for a run-time reconfigurable computer architecture

Memory elements with relay devices

METHODS AND APPARATUS FOR INCLUDING AN AIR GAP IN CARBON-BASED MEMORY DEVICES

Resistance change memory

Methods for controlling density, porosity, and/or gap size within nanotube fabric layers and films

Programmable read-only memory device and method of writing the same

Field programmable read-only memory device

Single device driver circuit to control three-dimensional memory element array

DOPED ELONGATED SEMICONDUCTORS, GROWING SUCH SEMICONDUCTORS, DEVICES INCLUDING SUCH SEMICONDUCTORS AND FABRICATING SUCH DEVICES

FIELD PROGRAMMABLE GATE ARRAY

SYSTEMS AND METHODS TO COOL SEMICONDUCTOR

Method of integrating a single nanowire into a nanocircuit

Methods of forming structures having nanotubes extending between opposing electrodes and structures including same

Multiplexed Assay Using Encoded Solid Support Matrices

Non-volatile storage system using opposite polarity programming signals for MIM memory cell

METHODS FOR INCREASING BOTTOM ELECTRODE PERFORMANCE IN CARBON-BASED MEMORY DEVICES

Nanoscopic wire-based devices and arrays

Field effect devices controlled via a nanotube switching element

Nanowire memory device and method of manufacturing the same

Switch device and circuit including switch device

Switching device and a method for forming a switching device

Memory cell that includes a carbon-based memory element and methods of forming the same

Memory device and method for manufacturing same

METHODS OF MANUFACTURING A MEMORY DEVICE HAVING A CARBON NANOTUBE

Bistable nanoswitch

Single device driver circuit to control three-dimensional memory element array

Magnetic memory element, magnetic memory device, information recording/reproducing apparatus

Nanoelectronic differential amplifiers and related circuits implemented on a segment of a graphene nanoribbon

Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same

Method for manufacturing nonvolatile memory device

MEMORY EMPLOYING DIAMOND-LIKE CARBON RESISTIVITY-SWITCHABLE MATERIAL AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE

Memory cell comprising a carbon nanotube fabric element and a steering element

Graphene-based switching elements using a diamond-shaped nano-patch and interconnecting nano-ribbons

Memory cell that includes a carbon-based memory element and methods of forming the same

Multiplexed Assay Using Encoded Solid Support Matrices

Resistance change memory

Memristor with nanostructure electrodes

Semiconductor nanowire memory device

Two-terminal nanotube devices and systems and methods of making same

Electromechanical switch, storage device comprising such an electromechanical switch and method for operating the same

Multiplexed assay using encoded solid support matrices

Optically controlled electrical-switch device based upon carbon nanotubes and electrical-switch system using the switch device

Memory cell and methods of forming a memory cell comprising a carbon nanotube fabric element and a steering element

Charge storage nanostructure

Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same

Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same

Nanoscale multiplexer

Memristive device having a porous dopant diffusion element

Nonoscopic wired-based devices and arrays

Graphene Memory Cell and Fabrication Methods Thereof

Continuously variable graded artificial dielectrics using nanostructures

Compact electrical switching devices with nanotube elements, and methods of making same

Page register outside array and sense amplifier interface

Methods of forming a reversible resistance-switching metal-insulator-metal structure

Non-volatile electromechanical configuration bit array

Deletable nanotube circuit

Method for forming composites of sub-arrays of fullerene nanotubes

Methods of making nanotube switches

Methods and apparatus for using a configuration array similar to an associated data array

Multi-valued ROM using carbon-nanotube and nanowire FET

Nanotube-based switching elements and logic circuits

Nanoelectronic differential amplifiers and related circuits having graphene nanoribbons

Two-terminal nanotube devices including a nanotube bridge and methods of making same

Method for adjusting a resistive change element using a reference

Electro-mechanical transistor

Two-terminal nanotube devices and systems and methods of making same

Method for resetting a resistive change memory element

LARGE SCALE NANOELEMENT ASSEMBLY METHOD FOR MAKING NANOSCALE CIRCUIT INTERCONNECTS AND DIODES

Method and system of using nanotube fabrics as joule heating elements for memories and other applications

Carbon nanotube resistor, semiconductor device, and manufacturing method thereof

Nanowire memory device and method of manufacturing the same

RESISTANCE CHANGE MEMORY

Deletable nanotube circuit

Nanotube memory cell with floating gate based on passivated nanoparticles and manufacturing process thereof

Nanotube-on-gate FET structures and applications

Magnetic nanotransistor

Nonvolatile memory electronic device including nanowire channel and nanoparticle-floating gate nodes and a method for fabricating the same

Methods of forming devices comprising carbon nanotubes

Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture

Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture

Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines

Semiconductor element

PHASE CHANGE MEMORY DEVICE USING CARBON NANOTUBE

Nanotube Device

PHOTON-BASED MEMORY DEVICE

Static random access memories having carbon nanotube thin films

Enclosed nanotube structure and method for forming

Programming a memory cell with a diode in series by applying reverse bias

Method of programming a nonvolatile memory device containing a carbon storage material

Nano memory, light, energy, antenna and strand-based systems and methods

ELECTRIC DEVICE WITH NANOWIRES COMPRISING A PHASE CHANGE MATERIAL

High speed carbon nanotube memory

NANOTUBE ESD PROTECTIVE DEVICES AND CORRESPONDING NONVOLATILE AND VOLATILE NANOTUBE SWITCHES

Method of programming a nonvolatile memory cell by reverse biasing a diode steering element to set a storage element

Method to program a memory cell comprising a carbon nanotube fabric element and a steering element

Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same

Electric element, switching element, memory element, switching method and memory method

Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same

Bistable nanoswitch

Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same

NON-VOLATILE SEMICONDUCTOR MEMORY DEVICES

Macroscopically manipulable nanoscale devices made from nanotube assemblies

Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices

High density nanodot nonvolatile memory

Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same

Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same

Non-volatile electromechanical field effect devices and circuits using same and methods of forming same

Nanotube-based switching elements with multiple controls and logic circuits having said elements

Nanotube-based logic driver circuits

Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same

Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same

Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks

RF nanoswitch

Methods for increasing carbon nano-tube (CNT) yield in memory devices

ARRAY STRUCTURE OF NANO MATERIALS

Nonvolatile nanotube programmable logic devices and a nonvolatile nanotube field programmable gate array using same

Integrated three-dimensional semiconductor system comprising nonvolatile nanotube field effect transistors

Non-volatile electromechanical field effect devices and circuits using same and methods of forming same

Method of making sensor platform using a non-horizontally oriented nanotube element

Variable capacitor single-electron transistor including a P-N junction gate electrode

Devices having vertically-disposed nanofabric articles and methods of making the same

Hybrid carbon nanotube FET (CNFET)-FET static RAM (SRAM) and method of making same

Methods of forming structures having nanotubes extending between opposing electrodes and structures including same

Cross point memory cell with distributed diodes and method of making same

Multiple series passive element matrix cell for three-dimensional arrays

CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAME

Method of making a nanotube-based shadow random access memory

NRAM arrays with nanotube blocks, nanotube traces, and nanotube planes and methods of making same

Nano filament structure and methods of forming the same

Optically controlled electrical-switch device based upon carbon nanotubes and electrical-switch system using the switch device

Nanotube device structure and methods of fabrication

Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches

Carbon nanotube memory including a buffered data path

METAL OXIDE RESISTIVE MEMORY AND METHOD OF FABRICATING THE SAME

EEPROMS USING CARBON NANOTUBES FOR CELL STORAGE

Integrated nanotube and field effect switching devices

Memory devices having a carbon nanotube

Multi-bit nonvolatile memory devices and methods of operating the same

Electromechanical memory array using nanotube ribbons and method for making same

METHODS OF MAKING CARBON NANOTUBE FILMS, LAYERS, FABRICS, RIBBONS, ELEMENTS AND ARTICLES

Method to assemble structures from nano-materials

Methods for etching carbon nano-tube films for use in non-volatile memories

Resistive changing device

Methods of making nanotube-based switching elements and logic circuits

Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same

Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same

CARBON NANOTUBE MEMORY CELLS HAVING FLAT BOTTOM ELECTRODE CONTACT SURFACE

Memory cell that includes a carbon-based memory element and methods of forming the same

Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same

Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same

Multiplexed assays using encoded solid supports

Multiwalled carbon nanotube memory device

Electric device with a layer of conductive material contacted by nanowires

Nanoscale shift register and signal demultiplexing using microscale/nanoscale shift registers

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Method of operating an integrated circuit, integrated circuit and method to determine an operating point

Integrated circuit having a memory cell arrangement and method for reading a memory cell state using a plurality of partial readings

Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same

Method of making discrete trap memory (DTM) mediated by fullerenes

Nanostructure-based memory

Array of fullerene nanotubes

Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same

MEMORY CELL WITH PLANARIZED CARBON NANOTUBE LAYER AND METHODS OF FORMING THE SAME

Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same

Fused thiophene acenes and organic semiconductors made therefrom

NANOTUBES AND NANOWIRES BASED ELECTRONIC DEVICES AND METHOD OF FABRICATION THEREOF

Methods of forming and programming floating-gate memory cells having carbon nanotubes

Memory arrays using nanotube articles with reprogrammable resistance

Nonvolatile organic bistable memory device and method of manufacturing the same

Fractal memory and computational methods and systems based on nanotechnology

Reconfigurable logic structures

Deletable nanotube circuit

FORMATION OF SELF-ASSEMBLED MONOLAYERS ON SILICON SUBSTRATES

Storage elements using nanotube switching elements

Multibit electro-mechanical memory device having at least one cantilever electrode and at least one gate line and manufacturing method thereof

Nanoscale wire-based data storage

Volatile nanotube-based switching elements with multiple controls

Carbon nanotube films, layers, fabrics, ribbons, elements and articles

Multibit electro-mechanical memory device and method of manufacturing the same

Multibit electro-mechanical device and method of manufacturing the same

Nano-elastic memory device and method of manufacturing the same

High density magnetic memory based on nanotubes

Methods of making electromechanical three-trace junction devices

Non-volatile shadow latch using a nanotube switch

Devices having horizontally-disposed nanofabric articles and methods of making the same

Switch Device and Method of Fabricating the Same

Nanoelectromechanical transistors and methods of forming same

Connectible nanotube circuit

Method for cutting fullerene nanotubes

Carbon nanotube fuse element

Method for forming a patterned array of fullerene nanotubes

Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles

Discrete Trap Memory (DTM) Mediated by Fullerenes

Nanoelectronic differential amplifiers and related circuits having carbon nanotubes, graphene nanoribbons, or other related materials

Nanotube-based switching element

1T MEMS scalable memory cell

Nanowire magnetic random access memory

Method to program a memory cell comprising a carbon nanotube fabric and a steering element

Memory cell comprising a carbon nanotube fabric element and a steering element

Carbon nanotube switches for memory, RF communications and sensing applications, and methods of making the same

Tri-state circuit using nanotube switching elements

Circuit arrays having cells with combinations of transistors and nanotube switching elements

Methods for producing composites of fullerene nanotubes and compositions thereof

Integrated nanotube and field effect switching devices

Methods for Making Data Storage Media and the Resultant Media

Receiver circuit using nanotube-based switches and logic

Hybrid circuit having nanotube memory cells

Receiver circuit using nanotube-based switches and transistors