199616 ⎘
Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
Non-volatile transistor element including a buried ferroelectric material based storage mechanism
#302Semiconductor integrated circuit device and a method of manufacturing the same
#303Memory cell, semiconductor integrated circuit device, and method for manufacturing semiconductor integrated circuit device
#304Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery
#305Operation method of nonvolatile memory device and storage device
#306Semiconductor memory device and method of operating the same
#307Semiconductor device
#308Non-volatile memory structure and method for preventing non-volatile memory structure from generating program disturbance
#309Semiconductor device including transistors formed in regions of semiconductor substrate and operation method of the same
#310Nonvolatile memory storage system
#311Post write erase conditioning
#312DRAM device with embedded flash memory for redundancy and fabrication method thereof
#313Semiconductor memory device
#314Semiconductor storage device
#315Memory device and memory system
#316Method for controlling memory device
#317Memory cells and integrated structures
#318Storage device
#319Non-volatile memory array with memory gate line and source line scrambling
#320Dense arrays and charge storage devices
#321Memory device and method of operating the same
#322Semiconductor memory device
#323Semiconductor memory device
#324Programming method of non volatile memory device according to program speed of memory cells
#325Semiconductor device and a manufacturing method thereof
#326Memory cell and non-volatile semiconductor storage device
#327Error characterization and mitigation for 16 nm MLC NAND flash memory under total ionizing dose effect
#328Semiconductor memory device
#329Memory device and method relating to different pass voltages for unselected pages
#330Suppression of program disturb with bit line and select gate voltage regulation
#331Unchangeable physical unclonable function in non-volatile memory
#332Memory transistor with multiple charge storing layers and a high work function gate electrode
#333MOSFET and memory cell having improved drain current through back bias application
#334Memory device and operation method thereof
#335Compact non-volatile memory device of the type with charge trapping in a dielectric interface
#336Semiconductor device and operating method of same
#337METHOD FOR OPERATING MEMORY ARRAY
#338Vertical memory device
#339Semiconductor memory device
#340MTP-Thyristor memory cell circuits and methods of operation
#341Memory system using non-linear filtering scheme and read method thereof
#342Re-configurable non-volatile memory structures and systems
#343Multi-gate nor flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates
#344Three-dimensional vertical NOR flash thin-film transistor strings
#345Data storage device having multi-stack chip package and operating method thereof
#346Multi-gate nor flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates
#347Semiconductor memory device and method for driving same
#348Semiconductor memory device and method of manufacturing the same
#349Semiconductor device, manufacturing method and controlling method of semiconductor device
#350Systems, methods, and apparatus for memory cells with common source lines
#351Block health monitoring using threshold voltage of dummy memory cells
#352Semiconductor memory device
#353Method to reduce program disturbs in non-volatile memory cells
#354SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
#355Method for manufacturing a semiconductor device
#356Semiconductor memory device
#357Semiconductor device
#358Method for operating flash memory
#359Memory device and method of operating the same
#360Non-volatile memory device and method of fabricating the same
#361Memory device and memory system having the same
#362Tunnel FET Based Non-Volatile Memory Boosted By Vertical Band-to-Band Tunneling
#363Semiconductor integrated circuit device and a method of manufacturing the same
#364Nonvolatile memory device and erasing method of nonvolatile memory device
#365Semiconductor memory having both volatile and non-volatile functionality and method of operating
#366Semiconductor device
#367Multi time programmable memories using local implantation in high-K/ metal gate technologies
#368Multi time programmable memories using local implantation in high-K/ metal gate technologies
#369Methods and devices for reducing program disturb in non-volatile memory cell arrays
#370Semiconductor device and method of manufacturing the same
#371FLASH MEMORY
#372Memory read apparatus and methods
#373Non-volatile semiconductor storage device for reducing the number of memory cells arranged along a control to which a memory gate voltage is applied
#374Semiconductor device structure
#375Data storage device having multi-stack chip package and operating method thereof
#376Memory device having vertical structure and memory system including the same
#377Fine-grained analog memory device based on charge-trapping in high-K gate dielectrics of transistors
#378Semiconductor device and a manufacturing method thereof
#379Sense amplifier and memory device using the same
#380Three-dimensional semiconductor device and method of manufacturing the same
#381Architecture for CMOS under array
#382Semiconductor device having vertical cell strings and a vertical common source line
#383NAND structure with tier select gate transistors
#384Semiconductor memory device for switching high voltage without potential drop
#385Semiconductor memory device for switching high voltage without potential drop
#386Non-volatile memory device and programming method thereof
#387Semiconductor memory device and method of manufacturing the same
#388Read performance of a non-volatile memory device, in particular a non-volatile memory device with buried selection transistor
#389Semiconductor device and operating method thereof
#390Systems, methods, and apparatus for memory cells with common source lines
#391Semiconductor device, semiconductor wafer, and electronic device
#392Method of verifying layout of vertical memory device
#393Nonvolatile memory cell employing hot carrier effect for data storage
#394Semiconductor memory device
#395Semiconductor device and method of manufacturing the same
#396Flash memory having a U-shaped charge storage layer
#397Memory system using non-linear filtering scheme and read method thereof
#398Memory system and operating method of memory system
#399Memory transistor with multiple charge storing layers and a high work function gate electrode
#400Nonvolatile memory device and method of operating the nonvolatile memory device
#401Semiconductor memory device
#402Asymmetric pass field-effect transistor for nonvolatile memory
#403SONOS FLASH MEMORY DEVICE
#404Nonvolatile memory device and operating method of nonvolatile memory device
#405Semiconductor device and manufacturing method thereof
#406Method for manufacturing a semiconductor device
#407Semiconductor device and electronic device
#408Reprogramming single bit memory cells without intervening erasure
#409Three-dimensional vertical NOR flash thin film transistor strings
#410Vertical memory device
#411Semiconductor memory device and structure
#412Operating method for host device and memory system including host device and storage device
#413Semiconductor memory device
#414Nonvolatile memory device, storage device having the same, operating method thereof
#415Segmented erase in memory
#416Three dimensional non-volatile memory with shorting source line/bit line pairs
#417Error characterization and mitigation for 16nm MLC NAND flash memory under total ionizing dose effect
#418Programming method of non volatile memory device
#419Semiconductor memory device
#420Capacitive-coupled non-volatile thin-film transistor NOR strings in three-dimensional arrays
#421Multi-gate NOR flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates
#422Asymmetric pass field-effect transistor for non-volatile memory
#423Method of performing a write operation based on an idle time
#424Methods of operating nonvolatile memory devices, and memory systems including nonvolatile memory devices
#425Dense arrays and charge storage devices
#426Adaptive operation of 3D memory
#427High voltage switch circuit for switching high voltage without potential drop and semiconductor memory device including the same
#428Row decoder and a memory device having the same
#429Non-volatile inverter
#430Weighting device, neural network, and operating method of the weighting device
#431Dynamic reconditioning of charge trapped based memory
#432Semiconductor integrated circuit device and a method of manufacturing the same
#433Semiconductor memory device
#434Stacked 3D semiconductor memory structure
#435Data storage having recovery function for threshold voltage distribution change of memory cells due to applying surface mounting technology and operating method
#436Non-volatile memory device with first gate structure in memory cell region and second gate structure in peripheral circuit region and non-volatile memory system including the same
#437Semiconductor memory device
#438Semiconductor memory having both volatile and non-volatile functionality
#439Determination of word line to word line shorts between adjacent blocks
#440NON-VOLATILE MEMORY DEVICE FOR REDUCING BIT LINE RECOVERY TIME
#441Method for fabricating a flash memory
#442Semiconductor device
#443NAND memory cell string having a stacked select gate structure and process for for forming same
#444MTP-thyristor memory cell circuits and methods of operation
#445Method to reduce program disturbs in non-volatile memory cells
#446Systems, methods, and apparatus for memory cells with common source lines
#447Storage device including nonvolatile memory device
#448Memory system, method of programming the memory system, and method of testing the memory system
#449Semiconductor device and method of driving semiconductor device
#450Three dimensional flash memory using electrode layers and/or interlayer insulation layers having different properties, and preparation method therefor
#451Pillar-shaped semiconductor memory device and method for producing the same
#452Nonvolatile memory device including multi-plane
#453Charge trapping memristor
#454DEVICE AND METHOD FOR DETERMINING ELECTRICAL CHARACTERISTICS FOR ELLIPSE GATE-ALL-AROUND FLASH MEMORY
#455NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
#456Semiconductor memory device
#457Dual function hybrid memory cell
#458Oxide-nitride-oxide stack having multiple oxynitride layers
#459Three dimensional NAND flash with self-aligned select gate
#460SONOS byte-erasable EEPROM
#461Mitigation of data retention drift by programming neighboring memory cells
#462Oxide-nitride-oxide stack having multiple oxynitride layers
#463Nonvolatle memory device and memory system having the same, and related memory management, erase and programming methods
#464Two transistor SONOS flash memory
#465Storage device and operating method thereof
#466Semiconductor device and a manufacturing method thereof
#467Semiconductor device or memory device and driving method thereof
#468Memory read apparatus and methods
#469Forced-bias method in sub-block erase
#470Data storage device and method of driving the same
#471Operation method operating nonvolatile memory device having plurality of memory blocks
#472Programming techniques for non-volatile memories with charge trapping layers
#473Storage device using power state information and operating method thereof
#474Memory device
#475System, apparatus, and method of programming a one-time programmable memory circuit having dual programming regions
#476Nonvolatile memory devices and driving methods thereof
#477Method and apparatus for stressing a non-volatile memory
#478Magneto-resistance element and magnetic sensor using the same
#479Split voltage non-volatile latch cell
#480Operating method of a nonvolatile memory device
#481Quantum dot channel (QDC) quantum dot gate transistors, memories and other devices
#482Data storage device including nonvolatile memory device and operating method thereof
#483Storage in charge-trap memory structures using additional electrically-charged regions
#484Data storage device compensating for initial threshold voltage distribution shift, method of operating the same, and data processing system including the same
#485Method to recover cycling damage and improve long term data retention
#486Nano structures, device using the same, and method for fabricating the nano structures
#487Three dimensional non-volatile memory with separate source lines
#488Read voltage adjustment
#489Configurable volatile memory without a dedicated power source for detecting a data save trigger condition
#490Weak erase after programming to improve data retention in charge-trapping memory
#49110-transistor non-volatile static random-access memory using a single non-volatile memory element and method of operation thereof
#492Semiconductor memory having volatile and multi-bit non-volatile functionality and method of operating
#493Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element
#494Semiconductor device
#495Three dimensional stacked semiconductor structure and method for manufacturing the same
#496Memory hole structure in three dimensional memory
#497Sensing multiple reference levels in non-volatile storage elements
#498Nonvolatile memory device and program method thereof
#499Programming of drain side word line to reduce program disturb and charge loss
#500Read with look-back combined with programming with asymmetric boosting in memory
#501Self-timed SLC NAND pipeline and concurrent program without verification
#502Modifying program pulses based on inter-pulse period to reduce program noise
#503Operating method of NAND flash memory unit
#504Word line repair for 3D vertical channel memory
#505Multi-charge region memory cells for a vertical NAND device
#506Controlling pass voltages to minimize program disturb in charge-trapping memory
#507Method and apparatus for providing three-dimensional integrated nonvolatile memory (NVM) and dynamic random access memory (DRAM) memory device
#508Method and apparatus for storing information using a memory able to perform both NVM and DRAM functions
#509Charge redistribution during erase in charge trapping memory
#510Charge redistribution during erase in charge trapping memory
#511Programming memory with reduced short-term charge loss
#512Reconfigurable electronic devices and operation method thereof
#513Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistors
#514Storage module and method for using healing effects of a quarantine process
#515Semiconductor device and method for fabricating the same
#516Adaptive selective bit line pre-charge for current savings and fast programming
#517Systems and methods for trimming control transistors for 3D NAND flash
#518Transistor and circuit using same
#519Semiconductor memory device having selective ECC function
#520Storage device and controlling method thereof
#521Retention logic for non-volatile memory
#522Non-volatile one-time programmable memory device
#5233D stacked memory array and method for determining threshold voltages of string selection transistors
#524Semiconductor storage device and manufacturing method thereof
#525Semiconductor memory having both volatile and non-volatile functionality and method of operating
#526Semiconductor devices and methods of manufacturing the same
#527Memory system having overwrite operation control method thereof
#528Three-dimensional semiconductor memory device
#529Nonvolatile memory devices, operating methods thereof and memory systems including the same
#530Mitigation of data retention drift by programming neighboring memory cells
#5313D independent double gate flash memory on bounded conductor layer
#5323D independent double gate flash memory
#533Storage device, including nonvolatile memory and memory controller, operating method of storage device and method of accessing storage device
#534Storage device including nonvolatile memory device and read method thereof
#535Efficient reprogramming method for tightening a threshold voltage distribution in a memory device
#536Non-volatile semiconductor storage device
#537Method for defining a default state of a charge trap based memory cell
#538Memory cell
#539Field effect transistor constructions with gate insulator having local regions radially there-through that have different capacitance at different circumferential locations relative to a channel core periphery
#540Neighboring word line program disturb countermeasure for charge-trapping memory
#541Method to reduce program disturbs in non-volatile memory cells
#542Voltage doubler and nonvolating memory device having the same
#543Systems, methods, and apparatus for memory cells with common source lines
#544Non-volatile memory based on retention modulation
#545Physically unclonable fuse using a NOR type memory array
#546Semiconductor memory device and method of operating the same
#547Configuration memory storing data by injecting carriers in gate insulating layer of MISFET
#548Semiconductor device and programming method thereof
#549Apparatuses and methods for coupling load current to a common source
#550Nonvolatile semiconductor memory device
#551Semiconductor device
#552Semiconductor device and operating method thereof
#553Semiconductor memory device and operating method thereof
#554Nonvolatile memory device and method of programming nonvolatile memory device
#555Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element
#556Nonvolatile semiconductor memory element, nonvolatile semiconductor memory, and method for operating nonvolatile semiconductor memory element
#557Nonvolatile memory and erasing method thereof
#558Semiconductor memory device, memory system including the same, and operating method thereof
#559Methods for managing operations in nonvolatile memory device
#560Memory read apparatus and methods
#561Nonvolatile memory device and method of driving the same
#562String dependent parameter setup
#563Memory system and user device including the same
#564Embedded charge trap multi-time-programmable-read-only-memory for high performance logic technology
#565Nonvolatile memory devices and driving methods thereof
#566Bitline circuits for embedded charge trap multi-time-programmable-read-only-memory
#567Wordline decoder circuits for embedded charge trap multi-time-programmable-read-only-memory
#568Three-dimensional semiconductor devices and fabricating methods thereof
#569Semicondutor memory device and memory system including the same
#570Memory architecture of 3D array with diode in memory string
#571Methods for erasing, reading and programming flash memories
#572Nonvolatile semiconductor memory device
#573Non-volatile memory device and method of manufacturing the same
#574Method for manufacturing semiconductor device
#575Semiconductor device and method for manufacturing semiconductor device for adjusting threshold thereof
#576Memory transistor with multiple charge storing layers and a high work function gate electrode
#577Semiconductor device and method for manufacturing semiconductor device
#578Ultra-low power programming method for N-channel semiconductor non-volatile memory
#579Method and apparatus for program and erase of select gate transistors
#580Semiconductor memory having both volatile and non-volatile functionality and method of operating
#581Memory devices having select gates with P type bodies, memory strings having separate source lines and methods
#582NAND flash memory unit, operating method and reading method
#583NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
#584Thermally assisted flash memory with diode strapping
#585Oxide-nitride-oxide stack having multiple oxynitride layers
#586Non-volatile semiconductor memory device
#587Back-gated non-volatile memory cell
#588Memory transistor with multiple charge storing layers and a high work function gate electrode
#589Semiconductor structure
#590Nonvolatile semiconductor memory device
#591Vertically-integrated nonvolatile memory devices having laterally-integrated ground select transistors
#592Memory device using graphene as charge-trap layer and method of operating the same
#593Data writing method, and memory control circuit unit and memory storage apparatus using the same
#594Semiconductor device and control method of the same
#595P-channel 3D memory array and methods to program and erase the same at bit level and block level utilizing band-to-band and fowler-nordheim tunneling principals
#596Memory element and memory device
#597Nonvolatile flash memory structures including fullerene molecules and methods for manufacturing the same
#598Method for erasing charge trap devices
#599Memory architecture of 3D array with diode in memory string
#600Twin MONOS Array for High Speed Application