ClassID:

199641

G11C16/3413 - CPC Classification

Classification description:

Erasable programmable read-only memories electrically programmable; Auxiliary circuits, e.g. for writing into memory; Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention; Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells Circuits or methods to recover overprogrammed nonvolatile memory cells detected during program verification, usually by means of a "soft" erasing step

Recent Application in this class:
#1
20250174284
2025-05-29

MEMORY DEVICE AND METHOD OF OPERATING THE SAME

#2
20240153560
2024-05-09

Nonvolatile semiconductor memory device

#3
20230335198
2023-10-19

SEMICONDUCTOR DEVICE

#4
20220262439
2022-08-18

Nonvolatile semiconductor memory device

#5
20220215890
2022-07-07

Short program verify recovery with reduced programming disturbance in a memory sub-system

#6
20220189565
2022-06-16

Short program verify recovery with reduced programming disturbance in a memory sub-system

#7
20210391024
2021-12-16

Short program verify recovery with reduced programming disturbance in a memory sub-system

#8
20210020249
2021-01-21

Nonvolatile semiconductor memory device

#9
20200135283
2020-04-30

Memory controller and method of operating the same

#10
20200013470
2020-01-09

Memory system and non-volatile semiconductor memory

#11
20200013466
2020-01-09

Nonvolatile semiconductor memory device

#12
20190237149
2019-08-01

Semiconductor memory device and method of operating the same

#13
20190180830
2019-06-13

Internal copy to handle NAND program fail

#14
20190103165
2019-04-04

Non-volatile memory device, method for operating the same and data storage device including the same

#15
20190080775
2019-03-14

Semiconductor memory device and method of operating the same

#16
20180308550
2018-10-25

Nonvolatile semiconductor memory device

#17
20180254090
2018-09-06

First read countermeasures in memory

#18
20180102177
2018-04-12

3D memory with staged-level multibit programming

#19
20180061502
2018-03-01

Memory array, and method for reading, programming and erasing memory array

#20
20180005695
2018-01-04

Nonvolatile semiconductor memory device

#21
20170345510
2017-11-30

Temperature variation compensation

#22
20170262180
2017-09-14

INTEGRATED CONTROL OF WRITE-ONCE DATA STORAGE DEVICES

#23
20170194057
2017-07-06

Data storage device and method of driving the same

#24
20170053700
2017-02-23

Nonvolatile semiconductor memory device

#25
20160111164
2016-04-21

Weak erase after programming to improve data retention in charge-trapping memory

#26
20160071602
2016-03-10

Nonvolatile semiconductor memory device

#27
20150248930
2015-09-03

Methods of operating nonvolatile memory devices that support efficient error detection

#28
20150103601
2015-04-16

Multi-pass soft programming

#29
20150026513
2015-01-22

Memory buffer having accessible information after a program-fail

#30
20140286100
2014-09-25

Nonvolatile semiconductor memory device

#31
20140247663
2014-09-04

Non-volatile storage with process that reduces read disturb on end wordlines

#32
20140082437
2014-03-20

Block and page level bad bit line and bits screening methods for program algorithm

#33
20120243312
2012-09-27

Semiconductor memory device comprising memory cell having charge accumulation layer and control gate and method of erasing data thereof

#34
20120206968
2012-08-16

Nonvolatile semiconductor memory device

#35
20120192018
2012-07-26

Apparatus and method for detecting over-programming condition in multistate memory device

#36
20120155180
2012-06-21

Nonvolatile semiconductor memory device and method of operating a nonvolatile memory device

#37
20110283050
2011-11-17

Memory buffer having accessible information after a program-fail

#38
20110228609
2011-09-22

Correcting for over programming non-volatile storage

#39
20110063917
2011-03-17

Nonvolatile semiconductor memory device

#40
20110007569
2011-01-13

Correcting for over programming non-volatile storage

#41
20110002172
2011-01-06

Nonvolatile semiconductor memory device

#42
20100238701
2010-09-23

Semiconductor memory device

#43
20100226164
2010-09-09

Nonvolatile semiconductor memory device

#44
20100122113
2010-05-13

Systems and methods for handling immediate data errors in flash memory

#45
20100002514
2010-01-07

Correcting for over programming non-volatile storage

#46
20090244969
2009-10-01

Semiconductor memory device comprising memory cell having charge accumulation layer and control gate and method of erasing data thereof

#47
20090190403
2009-07-30

Flash memory devices and erasing methods thereof

#48
20090164871
2009-06-25

Semiconductor memory devices that are configured to analyze read failures and related methods of operating such devices

#49
20090067247
2009-03-12

Method of programming nonvolatile memory device

#50
20080266979
2008-10-30

Methods of biasing a multi-level-cell memory

#51
20080175069
2008-07-24

Method of performing an erase operation in a non-volatile memory device

#52
20080123436
2008-05-29

Non-volatile memory device and erasing method thereof

#53
20070140017
2007-06-21

Nonvolatile semiconductor memory device

#54
20070101184
2007-05-03

Apparatus and method for detecting over-programming condition in multistate memory device

#55
20070002631
2007-01-04

Page buffer and non-volatile memory device including the same

#56
20060126394
2006-06-15

Multi-state memory having data recovery after program fail

#57
20050276120
2005-12-15

Erase algorithm for multi-level bit flash memory

#58
15451186
2018-07-17

First read countermeasures in memory

#59
14619875
2016-01-12

Reduced current program verify in non-volatile memory