199674 ⎘
Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
One-time programmable devices including chalcogenide material and electronic systems including the same
#302Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
#303Fuses for memory repair
#304Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
#305Program verify method for OTP memories
#306Power up detection system for a memory device
#307Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
#308Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
#309Monitoring circuit for semiconductor device
#310Dual function data register
#311Memory device capable of one-time data writing and repeated data reproduction, and method and display apparatus for operating the memory device
#312Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
#313Semiconductor device and its fabrication method
#314Chalcogenide anti-fuse
#315Apparatus for implementing eFuse sense amplifier testing without blowing the eFuse
#316Semiconductor memory
#317Method of programming cross-point diode memory array
#318Large capacity one-time programmable memory cell using metal oxides
#319Semiconductor device and method for writing data into memory
#320Apparatus and method for repairing a semiconductor memory
#321Anti-fuse repair control circuit and semiconductor device including DRAM having the same
#322Memory module with failed memory cell repair function and method thereof
#323Semiconductor device including anti-fuse circuit, and method of writing address to anti-fuse circuit
#324Multi-layer electrode, cross point memory array and method of manufacturing the same
#325MULTIPLE ANTIFUSE MEMORY CELLS AND METHODS TO FORM, PROGRAM, AND SENSE THE SAME
#326Memory cell fuse circuit and controlling method thereof
#327Water dispersible polyanilines made with polymeric acid colloids for electronics applications
#328Phase change material structure and related method
#329PHASE CHANGE MATERIAL STRUCTURES
#330Structure for increasing fuse programming yield
#331Semiconductor integrated circuit device and redundancy method thereof
#332Carbon nanotube fuse element
#333Junction diode with reduced reverse current
#334Redundancy memory cell access circuit and semiconductor memory device including the same
#335High forward current diodes for reverse write 3D cell
#336Random access electrically programmable e-fuse ROM
#337Antifuse replacement determination circuit and method of semiconductor memory device
#338Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
#339E-fuse and method
#340Methods of testing fuse elements for memory devices
#341Circuit arrays having cells with combinations of transistors and nanotube switching elements
#342Water dispersible polyanilines made with polymeric acid colloids for electronics applications
#343Semiconductor memory device and operating method thereof
#344Method for implementing eFuse sense amplifier testing without blowing the eFuse
#345Implementing Efuse sense amplifier testing without blowing the Efuse
#346Reversible polarity decoder circuit
#347Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements
#348Multi-use eFuse Macro
#349Nonvolatile memory and semiconductor device including nonvolatile memory
#350Semiconductor device with a plurality of one time programmable elements
#351Semiconductor memory device and programming method thereof
#352Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
#353Vertically stacked field programmable nonvolatile memory and method of fabrication
#354Antifuse structure having an integrated heating element
#355Design structure for providing optimal field programming of electronic fuses
#356Method of providing optimal field programming of electronic fuses
#357Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
#358Semiconductor device
#359Four-terminal antifuse structure having integrated heating elements for a programmable circuit
#360Reparable semiconductor memory device
#361Semiconductor memory
#362Semiconductor memory device
#363Semiconductor memory device containing antifuse write voltage generation circuit
#364Apparatus and method for repairing a semiconductor memory
#365Design structure for improving sensing margin of electrically programmable fuses
#366Method for using a passive element memory array incorporating reversible polarity word line and bit line decoders
#367Method for using a mixed-use memory array
#368Method for improving sensing margin of electrically programmable fuses
#369Mixed-use memory array with different data states
#370Reverse bias trim operations in non-volatile memory
#371Systems for high bandwidth one time field-programmable memory
#372Method for using a mixed-use memory array with different data states
#373High bandwidth one time field-programmable memory
#374Two-terminal nanotube devices and systems and methods of making same
#375Programming methods to increase window for reverse write 3D cell
#376Methods of programming one-time programmable devices including chalcogenide material
#377Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
#378Resistance change memory device
#379Semiconductor device having electrical fuses with less power consumption and interconnection arrangement
#380Semiconductor memory device comprising memory element programming circuits having different programming threshold power supply voltages
#381Electric fuse circuit providing margin read function
#382MEMORY CELL COMPRISING A DIODE FABRICATED IN A LOW RESISTIVITY, PROGRAMMED STATE
#383Method of making a diode read/write memory cell in a programmed state
#384Apparatus and method for repairing a semiconductor memory
#385Write-once nonvolatile memory with redundancy capability
#386Semiconductor apparatus, semiconductor storage apparatus, control signal generation method, and replacing method
#387Non-volatile memory devices and systems including phase-change one-time-programmable (OTP) memory cells and related methods
#388Magnetic tunneling junction antifuse device
#389One-time programmable, non-volatile field effect devices and methods of making same
#390Method of transforming carbon nanotubes
#391Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
#392System LSI
#393System and method for multi-use eFuse macro
#394Dual gate oxide one time programmable (OTP) antifuse cell
#395Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
#396Fuse trimming circuit
#397Semiconductor device
#398Semiconductor storage device including electrical fuse module
#399Method of making non-volatile field effect devices and arrays of same
#400Antifuse capacitor for configuring integrated circuits
#401Apparatus and method for repairing a semiconductor memory
#402Memory cell with high-K antifuse for reverse bias programming
#403Antifuse circuit with dynamic current limiter
#404Antifuse circuit with current regulator for controlling programming current
#405Fuse memory cell with improved protection against unauthorized access
#406Semiconductor integrated circuit, operating method thereof, and IC card including the circuit
#407Semiconductor integrated circuit with fuse data read circuit
#408Method and apparatus for increasing fuse programming yield through preferred use of duplicate data
#409Repair control circuit of semiconductor memory device with reduced size
#410Semiconductor memory
#411Memory device with customizable configuration
#412Semiconductor device with a plurality of fuse elements and method for programming the device
#413Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
#414Semiconductor device
#415Method and system for testing RAM redundant integrated circuits
#416Write-once nonvolatile phase change memory array
#417Multiple-time electrical fuse programming circuit
#418Programming and evaluating through PMOS injection
#419Vertically stacked field programmable nonvolatile memory and method of fabrication
#420Vertically stacked field programmable nonvolatile memory and method of fabrication
#421Semiconductor memory device with shift redundancy circuits
#422System and method for configuring an integrated circuit
#423Controlling clock rates of an integrated circuit including generating a clock rate control parameter from integrated circuit configuration
#424Fuse link trim algorithm for minimum residual
#425Antifuse structure having an integrated heating element
#426Gate dielectric antifuse circuits and methods for operating same
#427Polysilicon memory element
#428Fuse memory cell comprising a diode, the diode serving as the fuse element
#429One time programmable phase change memory
#430Programming and evaluating through PMOS injection
#431Semiconductor device having storage circuit which stores data in nonvolatile manner by using fuse element
#432Magnetic tunneling junction antifuse device
#433Fuse circuit and semiconductor integrated circuit device
#434Addressing circuit for a cross-point memory array including cross-point resistive elements
#435Integrated circuit incorporating three-dimensional memory array with dual opposing decoder arrangement
#436Manufacturing method for integrated circuit having disturb-free programming of passive element memory cells
#437Method of making non-volatile field effect devices and arrays of same
#438Apparatus and method for disturb-free programming of passive element memory cells
#439Field effect devices having a gate controlled via a nanotube switching element
#440Memory device and method for simultaneously programming and/or reading memory cells on different levels
#441Field effect devices having a source controlled via a nanotube switching element
#442One-time programmable, non-volatile field effect devices and methods of making same
#443Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
#444Circuit arrays having cells with combinations of transistors and nanotube switching elements
#445Field effect devices having a drain controlled via a nanotube switching element
#446Semi-fusible link system for a multi-layer integrated circuit and method of making same
#447Programmable memory
#448Bitcell for data redundancy
#449One-time programmable (OTP) anti-fuse memory cell
#450Self-tracked bistable latch cell
#451One-time programmable bitcell with diode under anti-fuse
#452Method and apparatus for dynamic calibration of on-die-precision-resistors
#453Cascaded E-fuse switch circuits to control data backup in a storage device
#454Distributed current source/sink using inactive memory elements
#455Anti-fuse one-time programmable memory cell and anti-fuse one-time programmable memory array
#456Electrical fuse bit cell and mask set
#457Fuse-based integrity protection
#458Programmable memory device sense amplifier