ClassID:

199890

G11C2211/5614 - CPC Classification

Classification description:

Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor; Indexing scheme relating to and sub-groups for features not covered by these groups; Multilevel memory cell aspects Multilevel memory cell comprising negative resistance, quantum tunneling or resonance tunneling elements

Recent Application in this class:
#1
20190392913
2019-12-26

Quantum shift register incorporating bifurcation

#2
20190392912
2019-12-26

Quantum shift register based ancillary quantum interaction gates

#3
20190362765
2019-11-28

SOT-MRAM and method for writing data thereof

#4
20190051338
2019-02-14

Storage device, information processing apparatus, and storage device control method

#5
20130106480
2013-05-02

Metal-insulator transition latch

#6
20120044767
2012-02-23

Conductive organic non-volatile memory device with nanocrystals embedded in an amorphous barrier layer

#7
20110037558
2011-02-17

Continuously variable resistor

#8
20100027324
2010-02-04

Variable integrated analog resistor

#9
20090040805
2009-02-12

Conductive organic nonvolatile memory device having nanocrystals surrounded by amorphous barrier

#10
20090008633
2009-01-08

NONVOLATILE MEMORY DEVICE USING CONDUCTIVE ORGANIC POLYMER HAVING NANOCRYSTALS EMBEDDED THEREIN AND METHOD OF MANUFACTURING THE NONVLATILE MEMORY DEVICE

#11
20080305574
2008-12-11

METHOD OF MANUFACTURING NONVOLATILE MEMORY DEVICE USING CONDUCTIVE ORGANIC POLYMER HAVING NANOCRYSTALS EMBEDDED THEREIN

#12
20080232153
2008-09-25

Nonvolatile memory device with nano gap electrode

#13
20080128674
2008-06-05

Differential negative resistance memory

#14
20070278482
2007-12-06

Organic memory devices including organic material and fullerene layers

#15
20070120174
2007-05-31

SRAM devices based on resonant tunneling

#16
20070108506
2007-05-17

Storage devices based on resonant tunneling

#17
20070108501
2007-05-17

SRAM circuit having a SONOS-based NAND device

#18
20070108500
2007-05-17

NROM storage devices based on resonant tunneling

#19
20070108499
2007-05-17

SONOS-based NAND devices based on resonant tunneling

#20
20070080345
2007-04-12

Volatile negative differential resistance device using metal nanoparticles

#21
20070063252
2007-03-22

Non-volatile memory and SRAM based on resonant tunneling devices

#22
20060239062
2006-10-26

Static RAM memory cell with DNR chalcogenide devices and method of forming

#23
20050253139
2005-11-17

Use of electroactive monolayers in generating negative differential resistance behaviors and devices employing the same

#24
20050121664
2005-06-09

Silicon on insulator (SOI) negative differential resistance (NDR) based memory device with reduced body effects

#25
20050104105
2005-05-19

Differential negative resistance memory

#26
16572604
2020-06-23

Memory array structure, in-memory computing apparatus and method thereof

#27
16244438
2020-05-05

Concurrent multi-state program verify for non-volatile memory