199899 ⎘
Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor; Indexing scheme relating to and sub-groups for features not covered by these groups; Multilevel memory programming aspects Self-converging multilevel programming
ADJUSTMENT OF PROGRAM VERIFY TARGETS CORRESPONDING TO A LAST PROGRAMMING DISTRIBUTION AND A PROGRAMMING DISTRIBUTION ADJACENT TO AN INITIAL PROGRAMMING DISTRIBUTION
#2ADJUSTMENT OF PROGRAM VERIFY TARGETS CORRESPONDING TO A LAST PROGRAMMING DISTRIBUTION AND A PROGRAMMING DISTRIBUTION ADJACENT TO AN INITIAL PROGRAMMING DISTRIBUTION
#3Adjustment of program verify targets corresponding to a last programming distribution and a programming distribution adjacent to an initial programming distribution
#4Dragging first pass read level thresholds based on changes in second pass read level thresholds
#5Dynamic programming of valley margins
#6Dynamic programing of valley margins of a memory cell
#7Adjustment of program verify targets corresponding to a last programming distribution and a programming distribution adjacent to an initial programming distribution
#8Dragging first pass read level thresholds based on changes in second pass read level thresholds
#9Memory device and method of operating the same
#10Control logic, semiconductor memory device, and method of operating the same
#11Auto low current programming method without verify
#12Semiconductor devices including variable resistance elements and methods of operating semiconductor devices
#13Non-volatile multilevel memory cell programming
#14Non-volatile multilevel memory cell programming