199910 ⎘
Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor; Indexing scheme relating to and sub-groups for features not covered by these groups; Miscellaneous aspects Multilevel memory with current-mirror arrangements
Selection scheme for crosspoint memory
#2Power line compensation for flash memory sense amplifiers
#3Methods and apparatuses having a voltage generator with an adjustable voltage drop for representing a voltage drop of a memory cell and/or a current mirror circuit and replica circuit
#4Methods and apparatuses having a voltage generator with an adjustable voltage drop for representing a voltage drop of a memory cell and/or a current mirror circuit and replica circuit
#5Methods and apparatuses having a voltage generator with an adjustable voltage drop for representing a voltage drop of a memory cell and/or a current mirror circuit and replica circuit
#6Memory devices and related methods
#7Comparators for delta-sigma modulators
#8Non-volatile memory apparatus sensing current changing according to data stored in memory cell
#9Non-volatile memory including reference signal path
#10Apparatuses including current compliance circuits and methods
#11Electronic device
#12Electronic device and method for operating the same
#13Methods and apparatuses having a voltage generator with an adjustable voltage drop for representing a voltage drop of a memory cell and/or a current mirror circuit and replica circuit
#14Non-volatile memory including reference signal path
#15Apparatuses including current compliance circuits and methods
#16Method and circuit for switching a memristive device
#17CELL-STATE MEASUREMENT IN RESISTIVE MEMORY
#18Method for reading phase change memory cells having a clamping circuit
#19CELL-STATE MEASUREMENT IN RESISTIVE MEMORY
#20Reading a memory element within a crossbar array
#21Dynamic sense current supply circuit and associated method for reading and characterizing a resistive memory array
#22Nonvolatile semiconductor storage device
#23Power line compensation for flash memory sense amplifiers
#24Memory scrubbing in third dimension memory
#25Current sensing scheme for non-volatile memory
#26Circuitry for reading phase-change memory cells having a clamping circuit
#27Semiconductor memory device enhancing reliability in data reading
#28Semiconductor memory
#29Method for source bias all bit line sensing in non-volatile storage
#30Multi-level cell serial-parallel sense scheme for non-volatile flash memory
#31Comparators for delta-sigma modulators
#32SEMICONDUCTOR MEMORY DEVICE WHICH INCLUDES MOS TRANSISTOR HAVING CHARGE ACCUMULATION LAYER AND CONTROL GATE AND DATA READOUT METHOD THEREOF
#33Method for protecting memory cells during programming
#34Power line compensation for flash memory sense amplifiers
#35Memory and multi-state sense amplifier thereof
#36Multi-state sense amplifier
#37Read, write, and erase circuit for programmable memory devices
#38Multi-level memory cell sensing
#39Integrated circuit memory having a read circuit
#40Sensing scheme for a non-volatile semiconductor memory cell
#41Read, write and erase circuit for programmable memory devices
#42Circuitry for reading phase change memory cells having a clamping circuit
#43Memory device with a ramp-like voltage biasing structure and reduced number of reference cells
#44System and method for preserving an error margin for a non-volatile memory
#45Semiconductor device and method of generating sense signal
#46Semiconductor memory device enhancing reliability in data reading
#47State change detection for two-terminal memory
#48State change detection for two-terminal memory utilizing current mirroring circuitry