ClassID:

199915

G11C2211/565 - CPC Classification

Classification description:

Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor; Indexing scheme relating to and sub-groups for features not covered by these groups; Miscellaneous aspects Multilevel memory comprising elements in triple well structure

Recent Application in this class:
#1
20130070531
2013-03-21

Substrate bias during program of non-volatile storage

#2
20120294089
2012-11-22

Semiconductor memory device capable of memorizing multivalued data

#3
20120230112
2012-09-13

Nonvolatile memory device, driving method thereof, and memory system having the same

#4
20120170366
2012-07-05

Semiconductor memory device and method of operating the same

#5
20120051146
2012-03-01

Semiconductor memory device capable of memorizing multivalued data

#6
20120002475
2012-01-05

Non-volatile semiconductor memory device

#7
20110134694
2011-06-09

High voltage generation and control in source-side injection programming of non-volatile memory

#8
20110096598
2011-04-28

Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells

#9
20110068319
2011-03-24

Information recording and reproducing device

#10
20110062407
2011-03-17

Information recording and reproducing device for high-recording density

#11
20110051520
2011-03-03

Nonvolatile memory device, driving method thereof, and memory system having the same

#12
20110026294
2011-02-03

Information recording and reproducing device

#13
20100329006
2010-12-30

Semiconductor memory device capable of memorizing multivalued data

#14
20100020615
2010-01-28

CLOCK SYNCHRONIZED NON-VOLATILE MEMORY DEVICE

#15
20090323416
2009-12-31

Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells

#16
20090316487
2009-12-24

Apparatus and method for inhibiting excess leakage current in unselected nonvolatile memory cells in an array

#17
20090268521
2009-10-29

Non-volatile semiconductor memory device

#18
20090190399
2009-07-30

Semiconductor memory device capable of correcting a read level properly

#19
20090135648
2009-05-28

Semiconductor memory device for storing multilevel data

#20
20090086542
2009-04-02

High voltage generation and control in source-side injection programming of non-volatile memory

#21
20090073763
2009-03-19

Method for controlling a non-volatile semiconductor memory device

#22
20090067245
2009-03-12

Semiconductor memory device provided with MOS transistor having charge accumulation layer and control gate and data write method of NAND flash memory

#23
20090067236
2009-03-12

Nonvolatile semiconductor memory device

#24
20090021982
2009-01-22

Semiconductor memory device and data erase method thereof

#25
20090003069
2009-01-01

Non-volatile storage with source bias all bit line sensing

#26
20090003068
2009-01-01

Method for source bias all bit line sensing in non-volatile storage

#27
20090003041
2009-01-01

Semiconductor memory device and read method thereof

#28
20080266965
2008-10-30

NONVOLATILE SEMICONDUCTOR MEMORY HAVING PLURAL DATA STORAGE PORTIONS FOR A BIT LINE CONNECTED TO MEMORY CELLS

#29
20080247254
2008-10-09

METHOD FOR TEMPERATURE COMPENSATING BIT LINE DURING SENSE OPERATIONS IN NON-VOLATILE STORAGE

#30
20080247253
2008-10-09

NON-VOLATILE STORAGE WITH TEMPERATURE COMPENSATION FOR BIT LINE DURING SENSE OPERATIONS

#31
20080247239
2008-10-09

Method for current sensing with biasing of source and P-well in non-volatile storage

#32
20080247238
2008-10-09

Method for sensing negative threshold voltages in non-volatile storage using current sensing

#33
20080247229
2008-10-09

Non-volatile storage using current sensing with biasing of source and P-Well

#34
20080247228
2008-10-09

Non-volatile storage with current sensing of negative threshold voltages

#35
20080158992
2008-07-03

Non-volatile storage with adaptive body bias

#36
20080158970
2008-07-03

Biasing non-volatile storage to compensate for temperature variations

#37
20080137425
2008-06-12

Reducing program disturb in non-volatile storage using early source-side boosting

#38
20070291538
2007-12-20

Clock synchronized non-volatile memory device

#39
20070279982
2007-12-06

Semiconductor memory device capable of correcting a read level properly

#40
20070274116
2007-11-29

Multi-level voltage adjustment

#41
20070253272
2007-11-01

Semiconductor memory device capable of executing high-speed read

#42
20070242527
2007-10-18

Semiconductor memory device for storing multilevel data

#43
20070237015
2007-10-11

Semiconductor memory device and dynamic latch refresh method thereof

#44
20070223280
2007-09-27

Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells

#45
20070171718
2007-07-26

Apparatus for programming non-volatile memory with reduced program disturb using modified pass voltages

#46
20070147141
2007-06-28

High-speed writable semiconductor memory device

#47
20070109854
2007-05-17

Semiconductor memory device capable of memorizing multivalued data

#48
20070064483
2007-03-22

Clock synchronized non-volatile memory device

#49
20070058433
2007-03-15

Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells

#50
20070047313
2007-03-01

Non-volatile semiconductor memory device

#51
20060198201
2006-09-07

Multi-bits storage memory

#52
20060146610
2006-07-06

Nonvolatile semiconductor memory having plural data storage portions for a bit line connected to memory cells

#53
20050162940
2005-07-28

Clock synchronized nonvolatile memory device

#54
20050146941
2005-07-07

Clock synchronized nonvolatile memory device

#55
20050110073
2005-05-26

Low voltage EEPROM memory arrays