199918 ⎘
Indexing scheme relating to for features not covered by this group; Resistive cells; Technology aspects Metal ion trapping, i.e. using memory material including cavities, pores or spaces in form of tunnels or channels wherein metal ions can be trapped but do not react and form an electro-deposit creating filaments or dendrites
Stack of Horizontally Extending and Vertically Overlapping Features, Methods of Forming Circuitry Components, and Methods of Forming an Array of Memory Cells
#2RESISTANCE CHANGE ELEMENT, STORAGE DEVICE, AND NEURAL NETWORK APPARATUS
#3Stack of Horizontally Extending and Vertically Overlapping Features, Methods of Forming Circuitry Components, and Methods of Forming an Array of Memory Cells
#4Resistive random access memory device with three-dimensional cross-point structure and method of operating the same
#5Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells
#6Resistive random access memory device with three-dimensional cross-point structure and method of operating the same
#7Two-terminal reversibly switchable memory device
#8Stacked resistive random access memory with integrated access transistor and high density layout
#9Two-terminal reversibly switchable memory device
#10Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells
#11Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells
#12Resistive random access memory device with three-dimensional cross-point structure and method of operating the same
#13Two-terminal reversibly switchable memory device
#14Semiconductor memory device
#15Apparatus and methods for electrical switching
#16Switching block configuration bit comprising a non-volatile memory cell
#17Semiconductor memory device
#18Memory cell switch device
#19Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells
#20Resistive random access memory cell
#21Two-terminal reversibly switchable memory device
#22Apparatus and methods for electrical switching
#23Resistive random access memory device with three-dimensional cross-point structure and method of operating the same
#24LOW LEAKAGE RESISTIVE RANDOM ACCESS MEMORY CELLS AND PROCESSES FOR FABRICATING SAME
#25Semiconductor memory device
#26Semiconductor device and information reading method
#27Low read current architecture for memory
#28Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells
#29Semiconductor device and information reading method
#30Silicon based nanoscale crossbar memory
#31Two-terminal reversibly switchable memory device
#32Silicon based nanoscale crossbar memory
#33Method of making memory element with ion source layer comprised of two or more unit IO source layers
#34Two-terminal reversibly switchable memory device
#35Low read current architecture for memory
#36Semiconductor device and information reading method
#37Electrochemical transistor
#38Memory element with ion source layer and memory device
#39Methods of forming circuitry components and methods of forming an array of memory cells
#40Combined memories in integrated circuits
#41Two Terminal Re Writeable Non Volatile Ion Transport Memory Device
#42Low read current architecture for memory
#43Memory element and memory device
#44Silicon based nanoscale crossbar memory
#45Combined memories in integrated circuits
#46TRI LAYER METAL OXIDE REWRITABLE NON VOLATILE TWO TERMINAL MEMORY ELEMENT
#47Switching element and manufacturing method thereof
#48Memristive device and methods of making and using the same
#49Memory device and method of reading memory device
#50Memory device and storage apparatus
#51Memory having tunnel barrier and method for writing and reading information to and from this memory
#52Nonvolatile semiconductor memory device
#53Memory device with improved data retention
#54Semiconductor memory device and memory cell voltage application method
#55Variable-resistance memory device and its operation method
#56Resistance change memory device and operation method of the same
#57Storage device and information recording and verification method
#58Nonvolatile semiconductor memory device
#59Memory device with inhibit control sections
#60INFORMATION PROCESSING SYSTEM
#61Low read current architecture for memory
#62Data storage system with refresh in place
#63Nonvolatile semiconductor memory device and method for performing verify write operation on the same
#64Semiconductor storage device and method of manufacturing the same
#65Variable resistance memory device
#66Semiconductor device
#67Memory device and storage apparatus
#68Silicon based nanoscale crossbar memory
#69Silicon-based nanoscale resistive device with adjustable resistance
#70Multi-terminal reversibly switchable memory device
#71Two-Terminal Reversibly Switchable Memory Device
#72Nonvolatile semiconductor memory device
#73Memory using variable tunnel barrier widths
#74Memory element and memory device
#75Resistance change memory device
#76SEMICONDUCTOR DEVICE
#77Switching device, rewritable logic integrated circuit, and memory device
#78Low read current architecture for memory
#79Semiconductor device with ion movement control
#80Organic memory device including a metallic nanoparticle monolayer
#81Combined memories in integrated circuits
#82Memory element and memory device comprising memory layer positioned between first and second electrodes
#83Electrochemical memory with internal boundary
#84Resistance change memory device
#85Method of driving storage device
#86Method for Forming Memory Layers
#87Storage element and storage apparatus
#88Memory device with improved data retention
#89Thin film diode integrated with chalcogenide memory cell
#90Memory device with improved data retention
#91Variable breakdown characteristic diode
#92Memory using mixed valence conductive oxides
#93Memory element and memory device comprising memory layer positioned between first and second electrodes
#94Semiconductor memory
#95Memory using variable tunnel barrier widths
#96Resistively switching nonvolatile memory cell based on alkali metal ion drift
#97Resistance variable memory elements based on polarized silver-selenide network growth
#98Resistive semiconductor element based on a solid-state ion conductor
#99Memory device and storage apparatus
#100Method to manufacture polymer memory with copper ion switching species
#101Memory device having variable resistive memory element
#102Resistance variable memory elements based on polarized silver-selenide network growth
#103Thin film diode integrated with chalcogenide memory cell
#104Switching block configuration bit comprising a non-volatile memory cell
#105Memory device