G11C2213/10 - CPC Classification

Indexing scheme relating to for features not covered by this group Resistive cells; Technology aspects

• G11C2213/11 » Metal ion trapping, i.e. using memory material including cavities, pores or spaces in form of tunnels or channels wherein metal ions can be trapped but do not react and form an electro-deposit creating filaments or dendrites 103
• G11C2213/12 » Non-metal ion trapping, i.e. using memory material trapping non-metal ions given by the electrode or another layer during a write operation, e.g. trapping, doping 22
• G11C2213/13 » Dissociation, i.e. using memory material including molecules which, during a write operation, are dissociated in ions which migrate further in the memory material 27
• G11C2213/14 » Use of different molecule structures as storage states, e.g. part of molecule being rotated 15
• G11C2213/15 » Current-voltage curve 442
• G11C2213/16 » Memory cell being a nanotube, e.g. suspended nanotube 148
• G11C2213/17 » Memory cell being a nanowire transistor 124
• G11C2213/18 » Memory cell being a nanowire having RADIAL composition 48
• G11C2213/19 » Memory cell comprising at least a nanowire and only two terminals 52

Recent Application in this class: