199919 ⎘
Indexing scheme relating to for features not covered by this group; Resistive cells; Technology aspects Non-metal ion trapping, i.e. using memory material trapping non-metal ions given by the electrode or another layer during a write operation, e.g. trapping, doping
Memory cell switch device
#2PROTON RESISTIVE MEMORY DEVICES AND METHODS
#3Resistive memory devices
#4Resistive random access memory cells having variable switching characteristics
#5Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and writing from a memory cell, and methods of programming a memory cell
#6Resistive memory devices
#7Nonvolatile Memory Elements And Memory Devices Including The Same
#8Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of reading to and writing from a memory cell, and methods of programming a memory cell
#9Nanoscale electronic device with barrier layers
#10Switchable junction with an intrinsic diode formed with a voltage dependent resistor
#11Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell
#12Non-volatile memory element and memory device including the same
#13Self-repairing memristor and method
#14Data read/write device
#15Variable resistance nonvolatile memory device
#16Semiconductor memory device and memory cell voltage application method
#17Data read/write device
#18Variable-resistance element
#19Data read/write device
#20Resistive memory device with improved data retention and reduced power
#21Variable breakdown characteristic diode
#22Non-volatile memory device including semiconductor charge-trapping material particles