199920 ⎘
Indexing scheme relating to for features not covered by this group; Resistive cells; Technology aspects Dissociation, i.e. using memory material including molecules which, during a write operation, are dissociated in ions which migrate further in the memory material
Memory cells with asymmetrical electrode interfaces
#2RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER
#3RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
#4Resistive memory device having a template layer
#5Memory cells with asymmetrical electrode interfaces
#6Memory cells with asymmetrical electrode interfaces
#7Switching resistor and method of making such a device
#8Resistive memory device having a template layer
#9Resistive memory device having side barriers
#10RESISTIVE MEMORY DEVICE HAVING A RETENTION LAYER WITH NON-LINEAR ION CONDUCTIVITY
#11Resistive memory device having a template layer
#12Resistive memory device having a template layer
#13Resistive memory device having a template layer
#14Resistive memory device having ohmic contacts
#15Resistive memory device having a conductive barrier layer
#16Memory cells with asymmetrical electrode interfaces
#17Memristive device based on reversible intercalated ion transfer between two meta-stable phases
#18Method for reading a third-dimensional embedded re-writeable non-volatile memory and registers
#19Nonvolatile semiconductor memory device
#20Programmable polyelectrolyte electrical switches
#21Three-dimensional non-volatile register with an oxygen-ion-based memory element and a vertically-stacked register logic
#22Non-volatile electrochemical memory device
#23Non-volatile register having a memory element and register logic vertically configured on a substrate
#24Programmable polyelectrolyte electrical switches
#25Electrochemical memory device
#26Molecular memory device
#27Molecular memory cell
#28Resistive memory device having a retention layer
#29Resistive memory device having a template layer