199924 ⎘
Indexing scheme relating to for features not covered by this group; Resistive cells; Technology aspects Memory cell being a nanowire transistor
Enhancing memory yield and performance through utilizing nanowire self-heating
#2Logic timing and reliability repair for nanowire circuits
#3Resistive memory apparatus using variable-resistance channels with high- and low-resistance regions
#4Ion-based nanoelectric memory
#5Enhancing memory yield and performance through utilizing nanowire self-heating
#6Logic timing and reliability repair for nanowire circuits
#7Memory device including ovonic threshold switch adjusting threshold voltage thereof
#8Switching device structures and methods
#9Variable resistance element, semiconductor device having variable resistance element, semiconductor device manufacturing method, and programming method using variable resistance element
#10Switching device structures and methods
#11Memory device based on conductance switching in polymer/electrolyte junctions
#12SYSTEMS AND METHODS TO COOL SEMICONDUCTOR
#13Field effect devices controlled via a nanotube switching element
#14Nanosensors
#15Methods of making nanotube switches
#16Multi-valued ROM using carbon-nanotube and nanowire FET
#17Nanotube-based switching elements and logic circuits
#18Nanotube memory cell with floating gate based on passivated nanoparticles and manufacturing process thereof
#19Nanotube-on-gate FET structures and applications
#20Nonvolatile memory electronic device including nanowire channel and nanoparticle-floating gate nodes and a method for fabricating the same
#21Semiconductor device configuration method
#22Nanosensors
#23Information recording/reproducing device
#24Nano memory, light, energy, antenna and strand-based systems and methods
#25NANOTUBE ESD PROTECTIVE DEVICES AND CORRESPONDING NONVOLATILE AND VOLATILE NANOTUBE SWITCHES
#26Information recording/reproducing device
#27Non-volatile memory with metal-polymer bi-layer
#28Nanotube-based switching elements with multiple controls and logic circuits having said elements
#29Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
#30Nanosensors
#31Vertical string phase change random access memory device
#32Variable capacitor single-electron transistor including a P-N junction gate electrode
#33Hybrid carbon nanotube FET (CNFET)-FET static RAM (SRAM) and method of making same
#34Method of making a nanotube-based shadow random access memory
#35Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
#36EEPROMS USING CARBON NANOTUBES FOR CELL STORAGE
#37Integrated nanotube and field effect switching devices
#38Multi-bit nonvolatile memory devices and methods of operating the same
#39Methods of making nanotube-based switching elements and logic circuits
#40Multiwalled carbon nanotube memory device
#41Nanoscale shift register and signal demultiplexing using microscale/nanoscale shift registers
#42NANOTUBES AND NANOWIRES BASED ELECTRONIC DEVICES AND METHOD OF FABRICATION THEREOF
#43Methods of forming and programming floating-gate memory cells having carbon nanotubes
#44Nanoscale wire-based data storage
#45Volatile nanotube-based switching elements with multiple controls
#46Nonvolatile memory device with nanowire channel and method for fabricating the same
#47Non-volatile SRAM memory cell equipped with mobile gate transistors and piezoelectric operation
#48Suspended-gate MOS transistor with non-volatile operation
#49Carbon nanotube fuse element
#50Circuit arrays having cells with combinations of transistors and nanotube switching elements
#51Integrated nanotube and field effect switching devices
#52Nanosensors
#53Receiver circuit using nanotube-based switches and logic
#54Receiver circuit using nanotube-based switches and transistors
#55Nanowire heterostructures
#56Bistable latch circuit implemented with nanotube-based switching elements
#57CARBON NANOTUBE TRANSISTOR HAVING LOW FRINGE CAPACITANCE AND LOW CHANNEL RESISTANCE
#58Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric
#59Field effect devices having a gate controlled via a nanotube switching element
#60Random access memory including nanotube switching elements
#61Crossbar-array designs and wire addressing methods that tolerate misalignment of electrical components at wire overlap points
#62Memory cell comprising a molecular transistor, device comprising a plurality of such cells and method for using same
#63Nano-Enabled Memory Devices and Anisotropic Charge Carrying Arrays
#64Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
#65Nanoscale wires and related devices
#66Nano-enabled memory devices and anisotropic charge carrying arrays
#67Methods of bridging lateral nanowires and device using same
#68Nano-enabled memory devices and anisotropic charge carrying arrays
#69Memory having nanotube transistor access device
#70Nanosensors
#71One-time programmable, non-volatile field effect devices and methods of making same
#72Transistor for non volatile memory devices having a carbon nanotube channel and electrically floating quantum dots in its gate dielectric
#73Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
#74Nanoscale shift register and signal demultiplexing using microscale/nanoscale shift registers
#75Shape memory device
#76Variable capacitor single-electron transistor including a P-N junction gate electrode
#77Nanotube- and nanocrystal-based non-volatile memory
#78Nanotube-based switching elements and logic circuits
#79Process for modifying at least one electrical property of a nanotube or a nanowire and a transistor incorporating it
#80Method of making non-volatile field effect devices and arrays of same
#81Non-volatile memory with carbon nanotubes
#82Nanotube- and nanocrystal-based non-volatile memory
#83Method of fabricating memory device utilizing carbon nanotubes
#84Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
#85Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
#86Non-volatile memory transistor with nanotube floating gate
#87Large-area nanoenabled macroelectronic substrates and uses therefor
#88Nano memory, light, energy, antenna and strand-based systems and methods
#89Carbon nanotube resonator transistor and method of making same
#90Nanotube ESD protective devices and corresponding nonvolatile and volatile nanotube switches
#91Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
#92Method of fabricating a field effect transistor
#93Integrated nanotube and field effect switching device
#94Nanosensors
#95Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cell
#96Horizontal memory gain cells
#97Receiver circuit using nanotube-based switches and logic
#98Receiver circuit using nanotube-based switches and transistors
#99Nanotube-based switching elements with multiple controls
#100Nanotube relay device
#101Integrated circuit array
#102Nano-enabled memory devices and anisotropic charge carrying arrays
#103Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
#104EEPROMS using carbon nanotubes for cell storage
#105Suspended gate single-electron device
#106Method of fabricating semiconductor devices with replacement, coaxial gate structure
#107Molecular switching device
#108Methods of bridging lateral nanowires and device using same
#109Large-area nanoenabled macroelectronic substrates and uses therefor
#110Large-area nonenabled macroelectronic substrates and uses therefor
#111Method of making non-volatile field effect devices and arrays of same
#112Field effect devices having a gate controlled via a nanotube switching element
#113Field effect devices having a source controlled via a nanotube switching element
#114One-time programmable, non-volatile field effect devices and methods of making same
#115Non-volatile electromechanical field effect devices and circuits using same and methods of forming same
#116Nanotube-on-gate FET structures and applications
#117Circuit arrays having cells with combinations of transistors and nanotube switching elements
#118Field effect devices having a drain controlled via a nanotube switching element
#119Four terminal non-volatile transistor device
#120Nanoscale heterojunctions and methods of making and using thereof
#121Variable capacitor single-electron device
#122Nanotube-based switching elements with multiple controls
#123Nanotube-based switching elements and logic circuits
#124Circuits made from nanotube-based switching elements with multiple controls
#125High density stacked CNT memory cube arrays with memory selectors