199926 ⎘
Indexing scheme relating to for features not covered by this group; Resistive cells; Technology aspects Memory cell comprising at least a nanowire and only two terminals
Systems and methods for efficient matrix multiplication
#2Nonvolatile nanotube switch elements using sidewall contacts
#3Systems and methods for efficient matrix multiplication
#4Nonvolatile nanotube memory arrays using nonvolatile nanotube blocks and cell selection transistors
#5Systems and methods for efficient matrix multiplication
#6Nonvolatile nanotube switches with reduced switching voltages and currents
#7Double density nonvolatile nanotube switch memory cells
#8Stacked three-dimensional arrays of two terminal nanotube switching devices
#9Nonvolatile nanotube switches and systems using same
#10Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
#11Non-volatile composite nanoscopic fabric NAND memory arrays and methods of making same
#12Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
#13Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
#14Memory elements and cross point switches and arrays for same using nonvolatile nanotube blocks
#15Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
#16Programmable read-only memory device and method of writing the same
#17Field programmable read-only memory device
#18Three-dimensional memory structures having shared pillar memory cells
#19Memristors with asymmetric electrodes
#20Two-terminal nanotube devices and systems and methods of making same
#21Page register outside array and sense amplifier interface
#22Nanowire-based memristor devices
#23Two-terminal nanotube devices and systems and methods of making same
#24Methods of forming devices comprising carbon nanotubes
#25Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
#26Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a double-global-bit-line architecture
#27Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
#28Three-dimensional memory structures having shared pillar memory cells
#29Method of programming a nonvolatile memory cell by reverse biasing a diode steering element to set a storage element
#30Electric element, switching element, memory element, switching method and memory method
#31Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
#32Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
#33Methods for increasing carbon nano-tube (CNT) yield in memory devices
#34Cross point memory cell with distributed diodes and method of making same
#35CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAME
#36Non-volatile multi-level re-writable memory cell incorporating a diode in series with multiple resistors and method for writing same
#37Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
#38Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
#39Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
#40Memory arrays using nanotube articles with reprogrammable resistance
#41Non-volatile shadow latch using a nanotube switch
#42Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
#43Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
#44Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
#45Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements
#46Nonvolatile resistive memories having scalable two-terminal nanotube switches
#47Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
#48Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
#49Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
#50Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks
#51Two-terminal nanotube devices and systems and methods of making same
#52Memory arrays using nanotube articles with reprogrammable resistance