199934 ⎘
Indexing scheme relating to for features not covered by this group; Resistive cell structure aspects Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode
NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING
#2Non-volatile memory structure with positioned doping
#3SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
#4Resetting method of resistive random access memory
#5Non-volatile memory structure with positioned doping
#6Two-terminal metastable mixed-conductor memristive devices
#7Memory device structure including tilted sidewall and method for fabricating the same
#8Semiconductor memory device
#9RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER
#10RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
#11Resistive memory device having a template layer
#12Nonvolatile memory apparatus including resistive-change material layer
#13Resistive random access memory and resetting method thereof
#14Methods of forming a phase change memory with vertical cross-point structure
#15Semiconductor memory device having variable resistance elements provided between wiring lines
#16Protuberant contacts for resistive switching devices
#17Resistive memory crossbar array employing selective barrier layer growth
#18Method having resistive memory crossbar array employing selective barrier layer growth
#19Methods of forming resistive memory elements
#20Resistive memory device having a template layer
#21Resistive memory device having side barriers
#22RESISTIVE MEMORY DEVICE HAVING A RETENTION LAYER WITH NON-LINEAR ION CONDUCTIVITY
#23Resistive memory device having a template layer
#24Resistive memory device having a template layer
#25Resistive memory device having a template layer
#26Resistive memory device having ohmic contacts
#27Resistive memory device having a conductive barrier layer
#28Non-volatile memory structure with positioned doping
#29Semiconductor memory device and method of manufacturing the same
#30Protuberant contacts for resistive switching devices
#31Protuberant contacts for resistive switching devices
#32Nonvolatile memory apparatus including resistive-change material layer
#33Methods of forming a phase change memory with vertical cross-point structure
#34Multi-state phase change memory device with vertical cross-point structure
#35Memory device
#36Read circuit for a variable resistance memory device
#37Multilayer selector device with low leakage current
#38Current delivery and spike mitigation in a memory cell array
#39Semiconductor memory device and method of manufacturing the same
#40Semiconductor storage device comprising resistance change film and method of manufacturing the same
#41Two-terminal metastable mixed-conductor memristive devices
#42High retention resistive random access memory
#43Multi-level phase change device
#44Memory device
#45Memory device
#46Switch device and storage unit
#47Variable resistance element and method for producing variable resistance element
#48Methods of forming resistive memory elements
#49Nonvolatile resistive memory device and manufacturing method thereof
#50Method for producing a memory device having a phase change film and reset gate
#51Wordline sidewall recess for integrating planar selector device
#52Implementation of VMCO area switching cell to VBL architecture
#53LOW LEAKAGE RESISTIVE RANDOM ACCESS MEMORY CELLS AND PROCESSES FOR FABRICATING SAME
#54Device switching using layered device structure
#55Memory device and method for manufacturing the same
#56Semiconductor device having reset gate and phase change layer
#57Resistive memory devices
#58Sensing a non-volatile memory device utilizing selector device holding characteristics
#59Resistance change nonvolatile memory device, semiconductor device, and method of manufacturing resistance change nonvolatile memory device
#60Embedded nonvolatile memory elements having resistive switching characteristics
#61Reduction of forming voltage in semiconductor devices
#62Resistive random access memory device and manufacturing method thereof
#63Non-volatile resistive memory cell comprising metal electrodes and a solid electrolyte between the metal electrodes
#64Confined defect profiling within resistive random memory access cells
#65Resistive-switching nonvolatile memory elements
#66Device switching using layered device structure
#67Nano multilayer film, field effect tube, sensor, random accessory memory and preparation method
#68Two-terminal memory with intrinsic rectifying characteristic
#69Confined defect profiling within resistive random memory access cells
#70Field effect transistor devices
#71Short circuit reduction in an electronic component comprising a stack of layers arranged on a flexible substrate
#72Reduced diffusion in metal electrode for two-terminal memory
#73Resistive switching devices and memory devices including the same
#74Memory component including an ion source layer and a resistance change layer, and a memory device using the same
#75Embedded nonvolatile memory elements having resistive switching characteristics
#76Resistive memory devices
#77Resistive-switching nonvolatile memory elements
#78Reduction of forming voltage in semiconductor devices
#79Memcapacitor devices, field effect transistor devices, and, non-volatile memory arrays
#80Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter element
#81Resistive random access memory cell and resistive random access memory module
#82Non-volatile memory cell containing an in-cell resistor
#83Resistance change nonvolatile memory device, semiconductor device, and method of manufacturing resistance change nonvolatile memory device
#84Nonvolatile Memory Elements And Memory Devices Including The Same
#85Non-volatile storage device and method for manufacturing the same
#86Resistive memory array and method for controlling operations of the same
#87Resistive-switching nonvolatile memory elements
#88Non-volatile resistive sense memory with improved switching
#89Crosspoint array and method of use with a crosspoint array having crossbar elements having a solid electrolyte material used as a rectifier with a symmetric or substantially symmetric resistive memory
#90Information recording/reproducing device
#91Two terminal multi-layer thin film resistance switching device with a diffusion barrier and methods thereof
#92Resistance change element and resistance change memory
#93Silver-selenide/chalcogenide glass stack for resistance variable memory and manufacturing method thereof
#94Non-volatile memory elements and memory devices including the same
#95Conductive organic non-volatile memory device with nanocrystals embedded in an amorphous barrier layer
#96Device switching using layered device structure
#97Amorphous semiiconductor layer memory device
#98Optimized solid electrolyte for programmable metallization cell devices and structures
#99Organic memory device using iridium organometallic compound and fabrication method thereof
#100Semiconductor memory device and control method of the same
#101Nonvolatile semiconductor memory device
#102Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
#103NONVOLATILE MEMORY DEVICE
#104Method of using a buffered electric pulse induced resistance device
#105Semiconductor memristor devices
#106Thermally Stable Nanoscale Switching Device
#107Method for fabricating memory
#108Resistive memory and method for controlling operations of the same
#109Information recording and reproducing device
#110Memcapacitor devices, field effect transistor devices, non-volatile memory arrays, and methods of programming
#111Microelectronic programmable device and methods of forming and programming the same
#112Non-volatile memory cell with non-ohmic selection layer
#113Memory component and memory device
#114Current steering element, storage element, storage device, and method for manufacturing current steering element
#115Method of a phase-change memory programming
#116Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same
#117Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
#118Method for forming organic layer pattern, organic layer pattern prepared by the same and organic memory devices comprising the pattern
#119Information recording and reproducing device
#120Non-volatile memory cell with non-ohmic selection layer
#121Information recording and reproducing device
#122Non-volatile resistive sense memory with praseodymium calcium manganese oxide
#123Memory devices having an embedded resistance memory with metal-oxygen compound
#124Organic memory device using iridium organometallic compound and fabrication method thereof
#125Layered resistance variable memory device and method of fabrication
#126Semiconductor storage device and method of manufacturing the same
#127Variable resistive element, manufacturing method for same, and non-volatile semiconductor memory device
#128Information recording/reproducing device
#129Silver-selenide/chalcogenide glass stack for resistance variable memory
#130Organic electronic memory component, memory component arrangement and method for operating an organic electronic memory component
#131Microelectronic programmable device and methods of forming and programming the same
#132NON-VOLATILE MEMORY CELL FORMATION
#133Method of programming of phase-change memory and associated devices and materials
#134MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
#135INFORMATION RECORDING/REPRODUCING DEVICE
#136Optimized solid electrolyte for programmable metallization cell devices and structures
#137Reduction of forming voltage in semiconductor devices
#138Method of fabricating organic memory device
#139Nonvolatile memory device and method of manufacturing the same
#140Memory device using abrupt metal-insulator transition and method of operating the same
#141Integrated Circuit, Method of Manufacturing an Integrated Circuit, and Memory Module
#142Water dispersible polyanilines made with polymeric acid colloids for electronics applications
#143METHOD FOR MANUFACTURING ORGANIC TRI-STABLE DEVICE
#144Operating process of organic device
#145Resistive random access memory device
#146Conductive organic nonvolatile memory device having nanocrystals surrounded by amorphous barrier
#147Resistance memory with tungsten compound and manufacturing
#148Resistive-switching nonvolatile memory elements
#149Microelectric programmable device and methods of forming and programming the same
#150RESISTIVE SWITCHING ELEMENT
#151INFORMATION RECORDING/REPRODUCING DEVICE
#152FPGA architecture at conventional and submicron scales
#153Optimized solid electrolyte for programmable metallization cell devices and structures
#154Rectifying element for a crosspoint based memory array architecture
#155Water dispersible polyanilines made with polymeric acid colloids for electronics applications
#156Resistance random access memory
#157Organic memory device using iridium organometallic compound and fabrication method thereof
#158Prevention of oxidation of carrier ions to improve memory retention properties of polymer memory cell
#159Storage node including diffusion barrier layer, phase change memory device having the same and methods of manufacturing the same
#160Electrochemical memory with heater
#161Method for forming organic layer pattern, organic layer pattern prepared by the same and organic memory devices comprising the pattern
#162ELECTRO-RESISTANCE ELEMENT, METHOD OF MANUFACTURING THE SAME AND ELECTRO-RESISTANCE MEMORY USING THE SAME
#163Programmable metallization cell structures including an oxide electrolyte, devices including the structure and method of forming same
#164Optimized solid electrolyte for programmable metallization cell devices and structures
#165Nonvolatile memory devices including oxygen-deficient metal oxide layers and methods of manufacturing the same
#166Method of driving storage device
#167Storage node, phase change random access memory and methods of fabricating the same
#168FPGA architecture at conventional and submicron scales
#169ORGANIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
#170Nonvolatile memory device
#171ORGANIC TRI-STABLE DEVICE AND METHOD FOR MANUFACTURING THE SAME
#172Silver-selenide/chalcogenide glass stack for resistance variable memory
#173Memory cell comprising a thin film three-terminal switching device having a metal source and /or drain region
#174Layered resistance variable memory device and method of fabrication
#175Design and operation of a resistance switching memory cell with diode
#176Probe storage device, system including the device, and methods of forming and using same
#177Memory device including barrier layer for improved switching speed and data retention
#178Microelectronic programmable device and methods of forming and programming the same
#179Memory cell with buffered-layer
#180Resistance variable memory elements based on polarized silver-selenide network growth
#181Programmable structure, an array including the structure, and methods of forming the same
#182Resistive semiconductor element based on a solid-state ion conductor
#183Nanoscale programmable structures and methods of forming and using same
#184Programmable structure, an array including the structure, and methods of forming the same
#185Programmable microelectronic devices and methods of forming and programming same
#186Resistance variable memory elements based on polarized silver-selenide network growth
#187Storage device
#188Molecular memory cell
#189Buffered-layer memory cell
#190Forming resistive memory crossbar array employing selective barrier layer growth
#191Resistive memory device having a retention layer
#192Resistive memory device having a template layer
#193Three-dimensional resistive random access memory device containing selectively grown amorphous silicon-containing barrier and method of making the same
#194Methods and apparatus for three-dimensional nonvolatile memory
#195Memory having an interlayer insulating structure with different thermal resistance