G11C2213/50 - CPC Classification Index

ClassID:

199933 ⎘

G11C2213/50 - CPC Classification

Classification description:

Indexing scheme relating to for features not covered by this group Resistive cell structure aspects

Sub-classes:

G11C2213/51 » Structure including a barrier layer preventing or limiting migration, diffusion of ions or charges or formation of electrolytes near an electrode 189
G11C2213/52 » Structure characterized by the electrode material, shape, etc. 319
G11C2213/53 » Structure wherein the resistive material being in a transistor, e.g. gate 137
G11C2213/54 » Structure including a tunneling barrier layer, the memory effect implying the modification of tunnel barrier conductivity 46
G11C2213/55 » Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer 130
G11C2213/56 » Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way 290

Recent Application in this class:

20240224821

2024-07-04

NON-VOLATILE MEMORY STRUCTURE WITH POSITIONED DOPING

20230225227

2023-07-13

Non-volatile memory structure with positioned doping

20210257410

2021-08-19

Integrated reactive material erasure element with phase change memory

20210234093

2021-07-29

Non-volatile memory structure with positioned doping

20210119124

2021-04-22

Memory device structure including tilted sidewall and method for fabricating the same

20200028079

2020-01-23

Tunable resistive element

20190312199

2019-10-10

Tunable resistive element

20190288195

2019-09-19

Non-volatile memory structure with positioned doping

20190288192

2019-09-19

Three-dimensional phase change memory device having a laterally constricted element and method of making the same

#10

20190272874

2019-09-05

MEMORY DEVICE, METHOD OF FORMING THE SAME, METHOD FOR CONTROLLING THE SAME AND MEMORY ARRAY

#11

20190020344

2019-01-17

Integrated circuits with programmable non-volatile resistive switch elements

#12

20170279045

2017-09-28

Memory elements having conductive cap layers and methods therefor

#13

20170092694

2017-03-30

Integrated reactive material erasure element with phase change memory

#14

20160104529

2016-04-14

Memory device and method for thermoelectric heat confinement

#15

20150103588

2015-04-16

Variable resistance memory apparatus, manufacturing method thereof

#16

20140369113

2014-12-18

Phase-change memory cells

#17

20140312296

2014-10-23

Three-dimensional oblique two-terminal memory with enhanced electric field

#18

15948043

2019-06-04

Tunable resistive element