199937 ⎘
Indexing scheme relating to for features not covered by this group; Resistive cell structure aspects Structure including a tunneling barrier layer, the memory effect implying the modification of tunnel barrier conductivity
Phase-change memory device having reversed phase-change characteristics and phase-change memory having highly integrated three-dimensional architecture using same
#2Two-terminal reversibly switchable memory device
#3Two-terminal reversibly switchable memory device
#4Phase-change memory device having reversed phase-change characteristics and phase-change memory having highly integrated three-dimensional architecture using same
#5Two-terminal reversibly switchable memory device
#6Read circuit for a variable resistance memory device
#7Multilayer selector device with low leakage current
#8Storage device, information processing apparatus, and storage device control method
#9Variable resistance element and memory device
#10Ferroelectric memory device and cross-point array apparatus including the same
#11Semiconductor device to reduce energy consumed to write data
#12Two-terminal reversibly switchable memory device
#13LOW LEAKAGE RESISTIVE RANDOM ACCESS MEMORY CELLS AND PROCESSES FOR FABRICATING SAME
#14Resistive random access memory device embedding tunnel insulating layer and memory array using the same and fabrication method thereof
#15Memory device having a tunnel barrier layer in a memory cell, and electronic device including the same
#16Two-terminal reversibly switchable memory device
#17Read distribution management for phase change memory
#18Non-volatile resistive memory cell comprising metal electrodes and a solid electrolyte between the metal electrodes
#19Two-terminal reversibly switchable memory device
#20Magnetic tunnel junction memory devices including crystallized boron-including first magnetic layer on a tunnel barrier layer and lower boron-content second magnetic layer on the first magnetic layer
#21Two-terminal memory with intrinsic rectifying characteristic
#22Non-volatile storage system using opposite polarity programming signals for MIM memory cell
#23Memory cells having ferroelectric materials
#24Programmable metallization cell with two dielectric layers
#25Select devices for memory cell applications
#26Nanoscale electronic device with barrier layers
#27Non-volatile storage system using opposite polarity programming signals for MIM memory cell
#28Semiconductor device and method of controlling semiconductor device
#29Changing a memristor state
#30Combined memories in integrated circuits
#31Multilayer dielectric memory device
#32Read distribution management for phase change memory
#33Two Terminal Re Writeable Non Volatile Ion Transport Memory Device
#34Resistance change element and resistance change memory
#35Combined memories in integrated circuits
#36TRI LAYER METAL OXIDE REWRITABLE NON VOLATILE TWO TERMINAL MEMORY ELEMENT
#37Memory having tunnel barrier and method for writing and reading information to and from this memory
#38Non-volatile memory with active ionic interface region
#39Data storage system with refresh in place
#40Multi-terminal reversibly switchable memory device
#41Two-Terminal Reversibly Switchable Memory Device
#42Storage device including a memory cell having multiple memory layers
#43Memory using variable tunnel barrier widths
#44Combined memories in integrated circuits
#45Memory using mixed valence conductive oxides
#46Memory using variable tunnel barrier widths
#47Resistive memory element
#48Memory device