ClassID:

199938

G11C2213/55 - CPC Classification

Classification description:

Indexing scheme relating to for features not covered by this group; Resistive cell structure aspects Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer

Recent Application in this class:
#1
20240147873
2024-05-02

PIEZOELECTRIC MEMORY

#2
20220407003
2022-12-22

Information processing device and method of driving information processing device

#3
20210280246
2021-09-09

Selector device for two-terminal memory

#4
20210050516
2021-02-18

RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER

#5
20210036220
2021-02-04

RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER

#6
20210036219
2021-02-04

Resistive memory device having a template layer

#7
20190326512
2019-10-24

Resistive memory device having a template layer

#8
20190319186
2019-10-17

Resistive memory device having side barriers

#9
20190319185
2019-10-17

RESISTIVE MEMORY DEVICE HAVING A RETENTION LAYER WITH NON-LINEAR ION CONDUCTIVITY

#10
20190288200
2019-09-19

Resistive memory device having a template layer

#11
20190288199
2019-09-19

Resistive memory device having a template layer

#12
20190288198
2019-09-19

Resistive memory device having a template layer

#13
20190288197
2019-09-19

Resistive memory device having ohmic contacts

#14
20190288196
2019-09-19

Resistive memory device having a conductive barrier layer

#15
20190214433
2019-07-11

Asymmetric selectors for memory cells

#16
20190122732
2019-04-25

Selector device for two-terminal memory

#17
20190088715
2019-03-21

MEMORY DEVICE

#18
20190066784
2019-02-28

Memory systems and memory programming methods

#19
20180277754
2018-09-27

High temperature resistant memristor based on two-dimensional covalent crystal and preparation method thereof

#20
20180277753
2018-09-27

Memory device

#21
20180068723
2018-03-08

Oxide based memory

#22
20170229175
2017-08-10

Memory systems and memory programming methods

#23
20170221559
2017-08-03

Vacancy-modulated conductive oxide resistive RAM device including an interfacial oxygen source layer

#24
20170004881
2017-01-05

Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture

#25
20160086664
2016-03-24

Resistive memory devices

#26
20160079530
2016-03-17

Nonvolatile memory element and method of manufacturing the same

#27
20150380643
2015-12-31

High-reliability high-speed memristor

#28
20150371706
2015-12-24

Memory systems and memory programming methods

#29
20150340608
2015-11-26

Semiconductor device and electronic device including the same

#30
20150255716
2015-09-10

Non-volatile resistive-switching memories

#31
20150097153
2015-04-09

Non-volatile resistive-switching memories

#32
20150078063
2015-03-19

Semiconductor memory device

#33
20150072499
2015-03-12

Method of making memory element with ion source layer comprised of two or more unit IO source layers

#34
20140362634
2014-12-11

Oxide based memory

#35
20140346433
2014-11-27

Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same

#36
20140321199
2014-10-30

Nano multilayer film, field effect tube, sensor, random accessory memory and preparation method

#37
20140311790
2014-10-23

Memristive element based on hetero-junction oxide

#38
20140301127
2014-10-09

Semiconductor device and electronic device including the same

#39
20140268998
2014-09-18

RRAM with dual mode operation

#40
20140216791
2014-08-07

Short circuit reduction in an electronic component comprising a stack of layers arranged on a flexible substrate

#41
20140198558
2014-07-17

Non-volatile storage system using opposite polarity programming signals for MIM memory cell

#42
20140185360
2014-07-03

Write method for writing to variable resistance nonvolatile memory element and variable resistance nonvolatile memory device

#43
20140185358
2014-07-03

Resistive random access memory with non-linear current-voltage relationship

#44
20140153312
2014-06-05

Memory cells having ferroelectric materials

#45
20140138602
2014-05-22

Controlled localized defect paths for resistive memories

#46
20140092668
2014-04-03

Resistive switching devices and memory devices including the same

#47
20140061568
2014-03-06

Resistive memory devices

#48
20140038352
2014-02-06

Non-volatile resistive-switching memories

#49
20140003139
2014-01-02

Memory devices with in-bit current limiters

#50
20130250658
2013-09-26

Nonvolatile memory element and nonvolatile memory device

#51
20130223134
2013-08-29

Method and circuit for switching a memristive device in an array

#52
20130121060
2013-05-16

NON-VOLATILE MEMORY ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME

#53
20130043451
2013-02-21

Nonvolatile Memory Elements And Memory Devices Including The Same

#54
20130021835
2013-01-24

Resistive RAM, method for fabricating the same, and method for driving the same

#55
20130010529
2013-01-10

Nonvolatile memory element, manufacturing method thereof, nonvolatile memory device, and design support method for nonvolatile memory element

#56
20130001497
2013-01-03

Memory element with ion source layer and memory device

#57
20130001496
2013-01-03

Memory element having ion source layers with different contents of a chalcogen element

#58
20120305880
2012-12-06

Resistive random access memory with electric-field strengthened layer and manufacturing method thereof

#59
20120294072
2012-11-22

Phase-Change Memory and a Method of Programming the Same

#60
20120224413
2012-09-06

Non-volatile storage system using opposite polarity programming signals for MIM memory cell

#61
20120218808
2012-08-30

Memory element and memory device

#62
20120195099
2012-08-02

Changing a memristor state

#63
20120153249
2012-06-21

Composition of memory cell with resistance-switching layers

#64
20120113706
2012-05-10

Memristors based on mixed-metal-valence compounds

#65
20120091427
2012-04-19

Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same

#66
20120091421
2012-04-19

Nanostructure quick-switch memristor and method of manufacturing the same

#67
20120088328
2012-04-12

Method of forming non-volatile resistive-switching memories

#68
20120068146
2012-03-22

Memory element and memory device

#69
20120068140
2012-03-22

Switchable electronic device and method of switching said device

#70
20120049145
2012-03-01

Non-volatile memory elements and memory devices including the same

#71
20120026776
2012-02-02

Memory resistor having plural different active materials

#72
20120025160
2012-02-02

NONVOLATILE MEMORY DEVICE

#73
20120018695
2012-01-26

Non-volatile memory element and memory device including the same

#74
20120012810
2012-01-19

Optoelectronic light exposure memory

#75
20110297927
2011-12-08

Oxide based memory

#76
20110266513
2011-11-03

Semiconductor memristor devices

#77
20110260134
2011-10-27

Thermally Stable Nanoscale Switching Device

#78
20110260133
2011-10-27

Switching element and manufacturing method thereof

#79
20110248236
2011-10-13

Semiconductor device and method for fabricating the same

#80
20110216575
2011-09-08

Nonvolatile memory device and nonvolatile memory apparatus

#81
20110194339
2011-08-11

Microelectronic programmable device and methods of forming and programming the same

#82
20110176353
2011-07-21

Memristive device having a porous dopant diffusion element

#83
20110170333
2011-07-14

Data read/write device

#84
20110069540
2011-03-24

Method of a phase-change memory programming

#85
20110031459
2011-02-10

Information recording and reproducing device

#86
20110007544
2011-01-13

Non-volatile memory with active ionic interface region

#87
20110006277
2011-01-13

Information recording and reproducing device

#88
20100291748
2010-11-18

Method for making PMC type memory cells

#89
20100284218
2010-11-11

Superlattice device, manufacturing method thereof, solid-state memory including superlattice device, data processing system, and data processing device

#90
20100259962
2010-10-14

Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture

#91
20100252796
2010-10-07

Resistance change element and method of manufacturing the same

#92
20100243983
2010-09-30

Controlled localized defect paths for resistive memories

#93
20100202187
2010-08-12

Data read/write device

#94
20100163823
2010-07-01

Resistive random access memory

#95
20100135073
2010-06-03

Organic electronic memory component, memory component arrangement and method for operating an organic electronic memory component

#96
20100135071
2010-06-03

Microelectronic programmable device and methods of forming and programming the same

#97
20100065803
2010-03-18

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

#98
20090321709
2009-12-31

Memory element, memory apparatus, and semiconductor integrated circuit

#99
20090272959
2009-11-05

Non-volatile resistive-switching memories

#100
20090231907
2009-09-17

Non-volatile electrochemical memory device

#101
20090146202
2009-06-11

Organic memory device with a charge storage layer and method of manufacture

#102
20090146140
2009-06-11

Nonvolatile organic bistable memory device and method of manufacturing the same

#103
20090121823
2009-05-14

Variable-resistance element

#104
20090053404
2009-02-26

METHOD FOR MANUFACTURING ORGANIC TRI-STABLE DEVICE

#105
20090052232
2009-02-26

Method for fabricating an integrated circuit including memory element with spatially stable material

#106
20090052228
2009-02-26

Operating process of organic device

#107
20080310211
2008-12-18

Resistance change memory device with a variable resistance element formed of a first and a second composite compound

#108
20080272356
2008-11-06

Phase change memory element with phase-change electrodes

#109
20080266931
2008-10-30

Resistive memory device having enhanced resist ratio and method of manufacturing same

#110
20080265285
2008-10-30

Microelectric programmable device and methods of forming and programming the same

#111
20080224119
2008-09-18

Phase change memory element

#112
20080212359
2008-09-04

Memory device and semiconductor integrated circuit

#113
20080179583
2008-07-31

Fabrication of phase change memory element with phase-change electrodes using conformal deposition

#114
20080179582
2008-07-31

Phase change memory element and method of making the same

#115
20080157066
2008-07-03

Organic memory device including a metallic nanoparticle monolayer

#116
20080043515
2008-02-21

Electrochemical memory device

#117
20070285968
2007-12-13

Resistance change memory device

#118
20070285967
2007-12-13

Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation

#119
20070285966
2007-12-13

Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode

#120
20070285965
2007-12-13

Resistance change memory device

#121
20070164272
2007-07-19

Three-terminal electrical bistable devices

#122
20070154691
2007-07-05

ORGANIC TRI-STABLE DEVICE AND METHOD FOR MANUFACTURING THE SAME

#123
20070148882
2007-06-28

Method for making PMC type memory cells

#124
20070133358
2007-06-14

Data read/write device

#125
20070117256
2007-05-24

Control layer for a nanoscale electronic switching device

#126
20070058426
2007-03-15

Semiconductor memory device comprising one or more injecting bilayer electrodes

#127
20060118848
2006-06-08

Microelectronic programmable device and methods of forming and programming the same

#128
20060076549
2006-04-13

Semiconductor memory

#129
20050274943
2005-12-15

Organic bistable memory and method of manufacturing the same

#130
20050249975
2005-11-10

Organic electronic device and methods for manufacturing a device of this kind

#131
15924014
2019-08-13

Resistive memory device having a retention layer

#132
15923992
2019-06-11

Resistive memory device having a template layer