199938 ⎘
Indexing scheme relating to for features not covered by this group; Resistive cell structure aspects Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer
PIEZOELECTRIC MEMORY
#2Information processing device and method of driving information processing device
#3Selector device for two-terminal memory
#4RESISTIVE MEMORY DEVICE HAVING A CONDUCTIVE BARRIER LAYER
#5RESISTIVE MEMORY DEVICE HAVING A TEMPLATE LAYER
#6Resistive memory device having a template layer
#7Resistive memory device having a template layer
#8Resistive memory device having side barriers
#9RESISTIVE MEMORY DEVICE HAVING A RETENTION LAYER WITH NON-LINEAR ION CONDUCTIVITY
#10Resistive memory device having a template layer
#11Resistive memory device having a template layer
#12Resistive memory device having a template layer
#13Resistive memory device having ohmic contacts
#14Resistive memory device having a conductive barrier layer
#15Asymmetric selectors for memory cells
#16Selector device for two-terminal memory
#17MEMORY DEVICE
#18Memory systems and memory programming methods
#19High temperature resistant memristor based on two-dimensional covalent crystal and preparation method thereof
#20Memory device
#21Oxide based memory
#22Memory systems and memory programming methods
#23Vacancy-modulated conductive oxide resistive RAM device including an interfacial oxygen source layer
#24Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
#25Resistive memory devices
#26Nonvolatile memory element and method of manufacturing the same
#27High-reliability high-speed memristor
#28Memory systems and memory programming methods
#29Semiconductor device and electronic device including the same
#30Non-volatile resistive-switching memories
#31Non-volatile resistive-switching memories
#32Semiconductor memory device
#33Method of making memory element with ion source layer comprised of two or more unit IO source layers
#34Oxide based memory
#35Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
#36Nano multilayer film, field effect tube, sensor, random accessory memory and preparation method
#37Memristive element based on hetero-junction oxide
#38Semiconductor device and electronic device including the same
#39RRAM with dual mode operation
#40Short circuit reduction in an electronic component comprising a stack of layers arranged on a flexible substrate
#41Non-volatile storage system using opposite polarity programming signals for MIM memory cell
#42Write method for writing to variable resistance nonvolatile memory element and variable resistance nonvolatile memory device
#43Resistive random access memory with non-linear current-voltage relationship
#44Memory cells having ferroelectric materials
#45Controlled localized defect paths for resistive memories
#46Resistive switching devices and memory devices including the same
#47Resistive memory devices
#48Non-volatile resistive-switching memories
#49Memory devices with in-bit current limiters
#50Nonvolatile memory element and nonvolatile memory device
#51Method and circuit for switching a memristive device in an array
#52NON-VOLATILE MEMORY ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME
#53Nonvolatile Memory Elements And Memory Devices Including The Same
#54Resistive RAM, method for fabricating the same, and method for driving the same
#55Nonvolatile memory element, manufacturing method thereof, nonvolatile memory device, and design support method for nonvolatile memory element
#56Memory element with ion source layer and memory device
#57Memory element having ion source layers with different contents of a chalcogen element
#58Resistive random access memory with electric-field strengthened layer and manufacturing method thereof
#59Phase-Change Memory and a Method of Programming the Same
#60Non-volatile storage system using opposite polarity programming signals for MIM memory cell
#61Memory element and memory device
#62Changing a memristor state
#63Composition of memory cell with resistance-switching layers
#64Memristors based on mixed-metal-valence compounds
#65Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
#66Nanostructure quick-switch memristor and method of manufacturing the same
#67Method of forming non-volatile resistive-switching memories
#68Memory element and memory device
#69Switchable electronic device and method of switching said device
#70Non-volatile memory elements and memory devices including the same
#71Memory resistor having plural different active materials
#72NONVOLATILE MEMORY DEVICE
#73Non-volatile memory element and memory device including the same
#74Optoelectronic light exposure memory
#75Oxide based memory
#76Semiconductor memristor devices
#77Thermally Stable Nanoscale Switching Device
#78Switching element and manufacturing method thereof
#79Semiconductor device and method for fabricating the same
#80Nonvolatile memory device and nonvolatile memory apparatus
#81Microelectronic programmable device and methods of forming and programming the same
#82Memristive device having a porous dopant diffusion element
#83Data read/write device
#84Method of a phase-change memory programming
#85Information recording and reproducing device
#86Non-volatile memory with active ionic interface region
#87Information recording and reproducing device
#88Method for making PMC type memory cells
#89Superlattice device, manufacturing method thereof, solid-state memory including superlattice device, data processing system, and data processing device
#90Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
#91Resistance change element and method of manufacturing the same
#92Controlled localized defect paths for resistive memories
#93Data read/write device
#94Resistive random access memory
#95Organic electronic memory component, memory component arrangement and method for operating an organic electronic memory component
#96Microelectronic programmable device and methods of forming and programming the same
#97MEMORY DEVICE AND MANUFACTURING METHOD THEREOF
#98Memory element, memory apparatus, and semiconductor integrated circuit
#99Non-volatile resistive-switching memories
#100Non-volatile electrochemical memory device
#101Organic memory device with a charge storage layer and method of manufacture
#102Nonvolatile organic bistable memory device and method of manufacturing the same
#103Variable-resistance element
#104METHOD FOR MANUFACTURING ORGANIC TRI-STABLE DEVICE
#105Method for fabricating an integrated circuit including memory element with spatially stable material
#106Operating process of organic device
#107Resistance change memory device with a variable resistance element formed of a first and a second composite compound
#108Phase change memory element with phase-change electrodes
#109Resistive memory device having enhanced resist ratio and method of manufacturing same
#110Microelectric programmable device and methods of forming and programming the same
#111Phase change memory element
#112Memory device and semiconductor integrated circuit
#113Fabrication of phase change memory element with phase-change electrodes using conformal deposition
#114Phase change memory element and method of making the same
#115Organic memory device including a metallic nanoparticle monolayer
#116Electrochemical memory device
#117Resistance change memory device
#118Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation
#119Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode
#120Resistance change memory device
#121Three-terminal electrical bistable devices
#122ORGANIC TRI-STABLE DEVICE AND METHOD FOR MANUFACTURING THE SAME
#123Method for making PMC type memory cells
#124Data read/write device
#125Control layer for a nanoscale electronic switching device
#126Semiconductor memory device comprising one or more injecting bilayer electrodes
#127Microelectronic programmable device and methods of forming and programming the same
#128Semiconductor memory
#129Organic bistable memory and method of manufacturing the same
#130Organic electronic device and methods for manufacturing a device of this kind
#131Resistive memory device having a retention layer
#132Resistive memory device having a template layer