199939 ⎘
Indexing scheme relating to for features not covered by this group; Resistive cell structure aspects Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
Set-while-verify circuit and reset-while verify circuit for resistive random access memory cells
#2Two-terminal reversibly switchable memory device
#3Method and Apparatus for Vitamin D Enhancement in Mushrooms
#4CONDUCTIVE METAL OXIDE STRUCTURES IN NON-VOLATILE RE-WRITABLE MEMORY DEVICES
#5Two-terminal reversibly switchable memory device
#6Circuit and layout for resistive random-access memory arrays
#7Circuit and layout for resistive random-access memory arrays having two bit lines per column
#8Conductive metal oxide structures in non-volatile re-writable memory devices
#9Electrically actuated switch
#10Methods, apparatuses, and circuits for programming a memory device
#11Memory cells, memory systems, and memory programming methods
#12Resistive memory device and method of fabricating the same
#13Two transistor, one resistor non-volatile gain cell memory and storage element
#14Conductive bridge random access memory (CBRAM) devices with low thermal conductivity electrolyte sublayer
#15Two-terminal reversibly switchable memory device
#16Methods, apparatuses, and circuits for programming a memory device
#17Architectures and layouts for an array of resistive random access memory cells and read and write methods thereof
#18Method and apparatus for vitamin D enhancement in mushrooms
#19Memory cell switch device
#20Method of manufacturing a memory device
#21Variable resistance element and memory device
#22Memory cells, memory systems, and memory programming methods
#23Two-terminal reversibly switchable memory device
#24Methods, apparatuses, and circuits for programming a memory device
#25Conductive metal oxide structures in non-volatile re-writable memory devices
#26Oxide based memory
#27Resistive random access memory device
#28Resistive switching memory cell
#29Electrically actuated switch
#30LOW LEAKAGE RESISTIVE RANDOM ACCESS MEMORY CELLS AND PROCESSES FOR FABRICATING SAME
#31Conductive metal oxide structures in non-volatile re-writable memory devices
#32Memory cells, memory systems, and memory programming methods
#33Two stage forming of resistive random access memory cells
#34Electronic devices having semiconductor memory units and method for fabricating the same
#35Two-terminal reversibly switchable memory device
#36Highly reliable nonvolatile memory and manufacturing method thereof
#37Storage device and storage unit with ion source layer and resistance change layer
#38Memory array architecture with two-terminal memory cells
#39Resistive switching element and use thereof
#40GCIB-treated resistive device
#41Read and write methods for a resistance change non-volatile memory device
#42Nonvolatile memory device having a current limiting element
#43Method of making memory element with ion source layer comprised of two or more unit IO source layers
#44Methods, apparatuses, and circuits for programming a memory device
#45Confined defect profiling within resistive random memory access cells
#46Resistive-switching nonvolatile memory elements
#47Two-terminal reversibly switchable memory device
#48Memory element and memory device
#49Conductive metal oxide structures in non-volatile re-writable memory devices
#50Oxide based memory
#51Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
#52Resistive memory cells with two discrete layers of programmable material, methods of programming memory cells, and methods of forming memory cells
#53Resistive random access memory cells having metal alloy current limiting layers
#54Memristive element based on hetero-junction oxide
#55Electronic devices having semiconductor memory units and method for fabricating the same
#56Memory cells, memory systems, and memory programming methods
#57Electrically actuated switch
#58Reduced diffusion in metal electrode for two-terminal memory
#59Nonvolatile memory device having a current limiting element
#60Resistance change element and method for producing the same
#61GCIB-treated resistive device
#62Controlled localized defect paths for resistive memories
#63Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and writing from a memory cell, and methods of programming a memory cell
#64Memory component including an ion source layer and a resistance change layer, and a memory device using the same
#65RESISTANCE MEMORY CELL, RESISTANCE MEMORY ARRAY AND METHOD OF FORMING THE SAME
#66Non-volatile memory device and method for manufacturing the same
#67Resistive random access memory, controlling method and manufacturing method therefor
#68Resistive-switching nonvolatile memory elements
#69Bipolar resistive switch heat mitigation
#70Conductive metal oxide structures in non volatile re-writable memory devices
#71Memory devices with in-bit current limiters
#72Variable resistance memory device and method of manufacturing the same
#73Memory cell having dielectric memory element
#74NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
#75Method of programming variable resistance nonvolatile memory element
#76Resistor structure for a non-volatile memory device and method
#77NON-VOLATILE MEMORY ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME
#78Device fabrication
#79Nonvolatile memory element, and nonvolatile memory device
#80Methods, apparatuses, and circuits for programming a memory device
#81Method of operating semiconductor device including variable resistance device
#82Nonvolatile memory device having a current limiting element
#83Nonvolatile memory device and method for programming nonvolatile memory element
#84Nonvolatile variable resistance memory element writing method, and nonvolatile variable resistance memory device
#85Multilayer cross-point memory array having reduced disturb susceptibility
#86Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of reading to and writing from a memory cell, and methods of programming a memory cell
#87Memory element with ion source layer and memory device
#88Nonvolatile memory element and nonvolatile memory device
#89Resistive-switching nonvolatile memory elements
#90Memory element and memory device
#91Variable-resistance memory device and its operation method
#92Memory element and memory device with ion source layer and resistance change layer
#93GCIB-treated resistive device
#94Reconfigurable crossbar memory array
#95Non-volatile resistive sense memory with improved switching
#96NAND architecture having a resistive memory cell connected to a control gate of a field-effect transistor
#97Memory element and memory device
#98Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
#99Nonvolatile semiconductor storage device and data writing method therefor
#100Memory unit and method of operating the same
#101Semiconductor device and method of controlling semiconductor device
#102Memory unit and method of operating the same
#103Combined memories in integrated circuits
#104Two terminal multi-layer thin film resistance switching device with a diffusion barrier and methods thereof
#105Method of manufacturing a variable resistance memory device
#106Memristors based on mixed-metal-valence compounds
#107Memory cells, methods of programming memory cells, and methods of forming memory cells
#108Multi-level memory arrays with memory cells that employ bipolar storage elements and methods of forming the same
#109Resistance-variable element and method for manufacturing the same
#110Two Terminal Re Writeable Non Volatile Ion Transport Memory Device
#111Switchable memory diodes based on ferroelectric/conjugated polymer heterostructures and/or their composites
#112Resistor structure for a non-volatile memory device and method
#113Memory element and memory device
#114Memory element and memory device
#115Silver-selenide/chalcogenide glass stack for resistance variable memory and manufacturing method thereof
#116Switchable electronic device and method of switching said device
#117Nonvolatile memory element, manufacturing method thereof, design support method therefor, and nonvolatile memory device
#118Non-volatile memory elements and memory devices including the same
#119Conductive metal oxide structures in non-volatile re-writable memory devices
#120Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and reading from a memory cell, and methods of programming a memory cell
#121MODIFICATION OF LOGIC BY MORPHOLOGICAL MANIPULATION OF A SEMICONDUCTOR RESISTIVE ELEMENT
#122Conductive metal oxide structures in non volatile re writable memory devices
#123Variable-resistance memory device with charge sharing that discharges pre-charge voltage of a selected bit line to share charge with unselected bit lines
#124Memory resistor having plural different active materials
#125Variable resistance memory with a select device
#126Non-volatile memory element and memory device including the same
#127Magnetic tunnel junction and memristor apparatus
#128Optoelectronic light exposure memory
#129Combined memories in integrated circuits
#130Oxide based memory
#131Memristive switch device
#132Semiconductor memristor devices
#133Thermally Stable Nanoscale Switching Device
#134Photo-responsive memory resistor and method of operation
#135Non-volatile memory cell with programmable unipolar switching element
#136Bipolar memory cells and memory devices including the same
#137Information recording and reproducing device
#138Nonvolatile semiconductor memory device
#139GCIB-treated resistive device
#140Memristive device having a porous dopant diffusion element
#141Memory component and memory device
#142Data read/write device
#143Current steering element, storage element, storage device, and method for manufacturing current steering element
#144Storage device and information rerecording method
#145Resistive random access memory devices and resistive random access memory arrays having the same
#146Nonvolatile semiconductor storage device and data writing method therefor
#147Nonvolatile variable resistance memory element writing method, and nonvolatile variable resistance memory device
#148Magnetic tunnel junction and memristor apparatus
#149Writing method for variable resistance nonvolatile memory element, and variable resistance nonvolatile memory device
#150Memory device and method of reading memory device
#151Nonvolatile memory element and nonvolatile memory device
#152Non-volatile memory device including a stacked structure and voltage application portion
#153Memory device and storage apparatus
#154Information recording and reproducing device
#155Phase change memory device, memory system, and programming method using variable verification pulses
#156Information recording and reproducing device for high-recording density
#157Non-volatile memory device and method for manufacturing the same
#158Nonvolatile memory element and nonvolatile memory device
#159Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
#160Continuously variable resistor
#161Memory cells including resistance variable material patterns of different compositions
#162Nonvolatile semiconductor memory device adjusting voltage of lines in a memory cell array
#163Information recording and reproducing device
#164Memory device with improved data retention
#165Resistive memory device and operating method thereof
#166Method of stabilizing data hold operations of a storage device
#167Information recording and reproducing device
#168Nonvolatile storage device and method for writing into memory cell of the same
#169Information recording and reproducing device
#170Non-volatile resistive sense memory with praseodymium calcium manganese oxide
#171Nonvolatile semiconductor memory device generating different write pulses to vary resistances
#172Nonvolatile memory element, and nonvolatile memory device
#173Variable-resistance memory device and its operation method
#174Resistance change memory device and operation method of the same
#175Resistance change memory device for storing information in a non-volatile manner by changing resistance of memory material
#176Storage device and information rerecording method
#177RESISTIVE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
#178Storage device and information recording and verification method
#179Resistance change element and method of manufacturing the same
#180Multi-level nonvolatile memory device with fast execution of program speed and programming method of the same
#181Controlled localized defect paths for resistive memories
#182Semiconductor memory device
#183Resistive random access memory, nonvolatile memory, and method of manufacturing resistive random access memory
#184Nonvolatile semiconductor memory device
#185Layered resistance variable memory device and method of fabrication
#186Memory device with inhibit control sections
#187INFORMATION PROCESSING SYSTEM
#188Non-volatile memory device
#189Data read/write device
#190Nonvolatile semiconductor memory device and method for performing verify write operation on the same
#191Semiconductor storage device and method of manufacturing the same
#192Variable resistance memory device
#193Memory cell having dielectric memory element
#194Variable resistive element, manufacturing method for same, and non-volatile semiconductor memory device
#195Device fabrication
#196Conductive metal oxide structures in non-volatile re-writable memory devices
#197Semiconductor device
#198Information recording/reproducing device
#199Silver-selenide/chalcogenide glass stack for resistance variable memory
#200Memory device and storage apparatus
#201Switching element and method for manufacturing switching element
#202Non-volatile memory cell with programmable unipolar switching element
#203Magnetic tunnel junction and memristor apparatus
#204NON-VOLATILE MEMORY CELL FORMATION
#205NONVOLATILE STORAGE DEVICE
#206INFORMATION RECORDING/REPRODUCING DEVICE
#207Semiconductor device and manufacturing method of the same
#208Multi-terminal reversibly switchable memory device
#209Two-Terminal Reversibly Switchable Memory Device
#210Storage device including a memory cell having multiple memory layers
#211Nonvolatile semiconductor memory device
#212Semiconductor memory device and semiconductor memory system
#213Switchable memory diode—a new memory device
#214Nonvolatile semiconductor memory apparatus and manufacturing method thereof
#215NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME
#216Resistance variable element
#217Nonvolatile semiconductor storage device and data writing method therefor
#218Memory element with positive temperature coefficient layer
#219Memory element and memory device
#220Variable resistance element, method for producing the same, and nonvolatile semiconductor storage device
#221Organic memory device with a charge storage layer and method of manufacture
#222Variable-resistance element
#223Resistance change memory device
#224Memory device
#225Multi-layer electrode, cross point memory array and method of manufacturing the same
#226Nonvolatile memory element
#227Method for fabricating an integrated circuit including memory element with spatially stable material
#228Phase-change memory element
#229SEMICONDUCTOR DEVICE
#230Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
#231Resistance change memory device with a variable resistance element formed of a first and a second composite compound
#232Resistive-switching nonvolatile memory elements
#233Device with damaged breakdown layer
#234INFORMATION RECORDING/REPRODUCING DEVICE
#235Memory device and semiconductor integrated circuit
#236Switching element, switching element fabriction method, reconfigurable logic integrated circuit, and memory element
#237Phase-change memory element
#238Non-volatile memory device and method of operating the same
#239Memory device with active layer of dendrimeric material
#240Bistable microelectronic switch stack
#241Resistance memory element and nonvolatile semiconductor memory
#242Combined memories in integrated circuits
#243Electrically actuated switch
#244Memory element and memory device comprising memory layer positioned between first and second electrodes
#245Storage device with reversible resistance change elements
#246Multi-terminal electrically actuated switch
#247SnSe-based limited reprogrammable cell
#248Non-volatile memory device including variable resistance material and method of fabricating the same
#249Non-volatile memory device including a variable resistance material
#250Resistance change memory device
#251Resistance change memory device
#252Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation
#253Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode
#254Resistance change memory device
#255Memory element and semiconductor device
#256Resistance random access memory device and a method of manufacturing the same
#257Electrode structure having at least two oxide layers and non-volatile memory device having the same
#258Organic memory device and fabrication method thereof
#259Switching element
#260Storage element and storage apparatus
#261Data read/write device
#262Control layer for a nanoscale electronic switching device
#263Switchable memory diode—a new memory device
#264Silver-selenide/chalcogenide glass stack for resistance variable memory
#265Hybrid devices
#266Semiconductor memory device comprising one or more injecting bilayer electrodes
#267Memory device with improved data retention
#268Memory cell comprising a thin film three-terminal switching device having a metal source and /or drain region
#269Layered resistance variable memory device and method of fabrication
#270Method of programming a memory device
#271Resistive memory device with improved data retention and reduced power
#272Memory device with improved data retention
#273Variable breakdown characteristic diode
#274SnSe-based limited reprogrammable cell
#275Memory using mixed valence conductive oxides
#276Nonvolatile memory device having two or more resistance elements and methods of forming and using the same
#277Memory element and memory device
#278Diode array architecture for addressing nanoscale resistive memory arrays
#279Memory element and memory device comprising memory layer positioned between first and second electrodes
#280Memory cell with buffered-layer
#281Semiconductor memory
#282Resistively switching nonvolatile memory cell based on alkali metal ion drift
#283Systems and methods for adjusting programming thresholds of polymer memory cells
#284Polymer memory device with variable period of retention time
#285Switchable memory diode-a new memory device
#286Composition of matter which results in electronic switching through intra- or inter- molecular charge transfer, or charge transfer between molecules and electrodes induced by an electrical field
#287Memory device and storage apparatus
#288Solid electrolyte switching device, FPGA using same, memory device, and method for manufacturing solid electrolyte switching device
#289Storage device
#290Buffered-layer memory cell