199941 ⎘
Indexing scheme relating to for features not covered by this group; Resistive array aspects Three dimensional array
Efficient utilization of memory die area
#302Semiconductor memory device and method of manufacturing the same
#303Tapered memory cell profiles
#304Tapered cell profile and fabrication
#305Semiconductor devices including auxiliary bit lines
#306Drift mitigation with embedded refresh
#3073D vertical memory array cell structures with individual selectors and processes
#308Forming structure and method for integrated circuit memory
#309Memory device and method of manufacturing the same
#310Arrays of memory cells and methods of forming an array of vertically stacked tiers of memory cells
#311Non-contact measurement of memory cell threshold voltage
#312Nonvolatile nanotube switches with reduced switching voltages and currents
#313Techniques to access a self-selecting memory device
#314RESISTIVE MEMORY APPARATUS AND LINE SELECTION CIRCUIT THEREOF
#315Multi-level self-selecting memory device
#316Computational accuracy in a crossbar array
#317Electronic device and method for fabricating the same
#318High density resistive random access memory integrated on complementary metal oxide semiconductor
#319Apparatuses having body connection lines coupled with access devices
#320Non-volatile memory with fast partial page operation
#321Memory arrays
#322Two-terminal reversibly switchable memory device
#323Method for programming 1-R resistive change element arrays
#324Memory devices
#325Multi-Level Distributed Pattern Processor
#326Mixed cross point memory
#327Mixed cross point memory
#328Neural networks using cross-point array and pattern readout method thereof
#3293D array arranged for memory and in-memory sum-of-products operations
#330Apparatuses and methods to control body potential in 3D non-volatile memory operations
#331Semiconductor storage device and controller
#332Memory devices having crosspoint memory arrays therein with multi-level word line and bit line structures
#3333D semiconductor device with memory
#334Selector device for two-terminal memory
#335Program operations in memory
#336Technologies for efficiently performing scatter-gather operations
#337Chalcogenide memory device components and composition
#338Methods of forming a phase change memory with vertical cross-point structure
#339Multi-state phase change memory device with vertical cross-point structure
#340Multi-state and confined phase change memory with vertical cross-point structure
#341Computing memory architecture
#342Method and apparatus for adjusting demarcation voltages based on cycle count metrics
#343Resistive random access memory matrix multiplication structures and methods
#344Semiconductor memory device
#345Memory device
#346Memory device
#347MEMORY DEVICE
#348Three dimensional memory arrays
#349Nonvolatile memory device
#350Methods and apparatus for programming barrier modulated memory cells
#351Resistance change type memory
#352Apparatus and method for identifying memory cells for data refresh based on monitor cell in a resistive memory device
#353Chalcogenide memory device components and composition
#354Semiconductor memory device with efficient inclusion of control circuits
#355Memory device
#356Memory circuit and formation method thereof
#357Provision of structural integrity in memory device
#3583-D crossbar architecture for fast energy-efficient in-memory computing of graph transitive closure
#359Memory device
#360Double density nonvolatile nanotube switch memory cells
#361Resistive memory device and resistive memory system including a plurality of layers, and method of operating the system
#362Tip-contact controlled three dimensional (3D) vertical self select memory
#363Current delivery and spike mitigation in a memory cell array
#364Tailoring current magnitude and duration during a programming pulse for a memory device
#365Memory preset adjustment based on adaptive calibration
#366Memory cell including multi-level sensing
#367Spherical complementary resistance switchable filler and nonvolatile complementary resistance switchable memory comprising the same
#368Semiconductor memory device and method of manufacturing the same
#369Control plane organization for flexible digital data plane
#370Semiconductor storage device comprising resistance change film and method of manufacturing the same
#371Method and apparatus providing multi-planed array memory device
#372RECONFIGURABLE CIRCUIT, RECONFIGURABLE CIRCUIT SYSTEM, AND METHOD FOR OPERATING RECONFIGURABLE CIRCUIT
#373SEMICONDUCTOR DEVICE
#374Managed NAND performance throttling
#375Managed NAND power management
#376Method and apparatus for multi-level setback read for three dimensional crosspoint memory
#377High voltage switching circuitry for a cross-point array
#378Memory device architecture
#379Memory device architecture
#380Nonvolatile SRAM
#381Constructions comprising stacked memory arrays
#382Variable resistance memory device and method of manufacturing the same
#383Three dimensional memory and methods of forming the same
#384Write verification and resistive state determination based on cell turn-on characteristics for resistive random access memory
#385Memory access techniques in memory devices with multiple partitions
#386Connections for memory electrode lines
#387Apparatuses having body connection lines coupled with access devices
#388Method and apparatus for vitamin D enhancement in mushrooms
#389Sense circuit with two-step clock signal for consecutive sensing
#390Method for evaluating thermal effect and reducing thermal crosstalk of three-dimensional integrated resistive switching memory
#391Double-biased three-dimensional one-time-programmable memory
#392Three-dimensional one-time-programmable memory with a dummy word line
#393GLOBAL BIT LINE PRE-CHARGE CIRCUIT THAT COMPENSATES FOR PROCESS, OPERATING VOLTAGE, AND TEMPERATURE VARIATIONS
#394Semiconductor device having magnetic tunnel junction pattern
#395Conductive hard mask for memory device formation
#396Data sensing in crosspoint memory structures
#397Bias control circuit with distributed architecture for memory cells
#398Forming and operating memory devices that utilize correlated electron material (CEM)
#399Non-volatile memory devices including integrated ballast resistor
#400Multi-level semiconductor memory device and structure
#401Three-dimensional one-time-programmable memory comprising dummy bit lines
#402Doping of selector and storage materials of a memory cell
#403Semiconductor memory device with a three-dimensional stacked memory cell structure
#404Plate node configurations and operations for a memory array
#405Memory device, and data processing method based on multi-layer RRAM crossbar array
#4063D semiconductor device and system
#407Memory cell switch device
#408Multi-deck memory device with inverted deck
#409High density memory architecture using back side metal layers
#410Memory tile access and selection patterns
#411Method of forming a layer and a method of fabricating a variable resistance memory device using the same
#412Memory device and rectifier
#413Operating method of memory device
#414Memory system
#415Multi-layer resistive memory device with variable resistance elements
#416Multiple plate line architecture for multideck memory array
#417Memory arrays
#418Data Storage with In-situ String-Searching Capabilities Comprising Three-Dimensional Vertical One-Time-Programmable Memory
#419NAND flash memory device and system including SLC and MLC write modes
#420Memory device
#421Electronic memory using memristors and crossbars activating a plurality of memristors in series
#422Efficient utilization of memory die area
#423Memory device having programmable impedance elements with a common conductor formed below bit lines
#424Switch device and storage unit
#425Thermal insulation for three-dimensional memory arrays
#426Thermal insulation for three-dimensional memory arrays
#427Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
#428Memory device and method of manufacturing the same
#429Accessing memory cells in parallel in a cross-point array
#430Storage with In-situ String-Searching Capabilities
#431Storage with In-situ Anti-Malware Capabilities
#432Stacked three-dimensional arrays of two terminal nanotube switching devices
#433Preservation circuit and methods to maintain values representing data in one or more layers of memory
#434Memory structure for use in resistive random access memory devices and method for use in manufacturing a data storage device
#435Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells
#436Semiconductor memory device with three-dimensional memory cells
#437Memory with bit line short circuit detection and masking of groups of bad bit lines
#438Low power barrier modulated cell for storage class memory
#439Apparatuses for modulating threshold voltages of memory cells
#440Variable resistance memory stack with treated sidewalls
#441Conductive hard mask for memory device formation
#442Three-dimensional memory apparatus and method of manufacturing the same
#443Three-dimensional memory apparatuses and methods of use
#444Two-terminal reversibly switchable memory device
#445Constructions comprising stacked memory arrays
#446Memory element with a reactive metal layer
#447Three dimension integrated circuits employing thin film transistors
#448Memory device, memory system, and memory control method
#449Apparatuses and methods to control body potential in 3D non-volatile memory operations
#450Conductive metal oxide structures in non-volatile re-writable memory devices
#451Voltage-controlled resistive devices
#452Memory device for a dynamic random access memory
#453Stack type semiconductor memory device
#454Memory device
#455Memory metal scheme
#456Three dimensional memory and methods of forming the same
#457Apparatuses including multi-level memory cells and methods of operation of same
#458Semiconductor storage device and controller
#4593D semiconductor device with stacked memory
#460Variable resistance memory device and method of manufacturing the same
#461Nonvolatile nanotube switches and systems using same
#462Signal timing alignment based on a common data strobe in memory devices configured for stacked arrangements
#463BUFFERING SYSTEMS FOR ACCESSING MULTIPLE LAYERS OF MEMORY IN INTEGRATED CIRCUITS
#464BUFFERING SYSTEMS FOR ACCESSING MULTIPLE LAYERS OF MEMORY IN INTEGRATED CIRCUITS
#465Self-repair logic for stacked memory architecture
#466Methods for error correction with resistive change element arrays
#467High voltage switching circuitry for a cross-point array
#468Methods for error correction with resistive change element arrays
#469Resistive switching memory cell
#470Memory device architecture
#471Accessing memory cells in parallel in a cross-point array
#472Semiconductor devices including auxiliary bit lines
#473Signal timing alignment based on a common data strobe in memory devices configured for stacked arrangements
#474Methods for programming 1-R resistive change element arrays
#475Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
#476Memory device
#477Interfaces and die packages, and appartuses including the same
#478Planar memory cell architectures in resistive memory devices
#479Semiconductor device with stacked structure of memory cells over sensing amplifiers, circuit board and electronic device
#480Multi-bit-per-cell three-dimensional one-time-programmable memory
#481Memory device including ovonic threshold switch adjusting threshold voltage thereof
#482Thermal insulation for three-dimensional memory arrays
#483Semiconductor constructions, electronic systems, and methods of forming cross-point memory arrays
#484Conductive hard mask for memory device formation
#485Resistive random access memory device with three-dimensional cross-point structure and method of operating the same
#486Memory device and method of manufacturing the same
#487Semiconductor memory device and memory system
#488Wordline sidewall recess for integrating planar selector device
#489Semiconductor memory device
#490Implementation of VMCO area switching cell to VBL architecture
#4913D semiconductor device with stacked memory
#492Vacancy-modulated conductive oxide resistive RAM device including an interfacial oxygen source layer
#493Methods and apparatuses for modulating threshold voltages of memory cells
#494Compact three-dimensional memory with an above-substrate decoding stage
#495Compact three-dimensional memory with semi-conductive address line portion
#496Semiconductor memory device
#497Manufacturing methods of MOSFET-type compact three-dimensional memory
#498Manufacturing methods of JFET-type compact three-dimensional memory
#499Compact three-dimensional mask-programmed read-only memory
#500Method and apparatus providing multi-planed array memory device
#501Apparatuses and methods for adjusting write parameters based on a write count
#502Offset-printing method for three-dimensional package
#503Offset-printing method for three-dimensional printed memory with multiple bits-per-cell
#504Offset-printing method for three-dimensional printed memory
#505Three-dimensional offset-printed memory with multiple bits-per-cell
#506Semiconductor memory device
#507Resistive semiconductor memory device and operation method thereof
#5083DIC based system with memory cells and transistors
#509Nonvolatile semiconductor memory device
#510Semiconductor storage device
#511Resistive memory devices with a multi-component electrode
#512Three-dimensional one-time-programmable memory comprising off-die address/data-translator
#513Semiconductor storage device and controller
#514Method of controlling a semiconductor memory device
#515Memory device and method for manufacturing the same
#516Memory device, method of controlling memory device, and memory system
#517High voltage switching circuitry for a cross-point array
#518Interfaces and die packages, and apparatuses including the same
#519Self-aligned floating gate in a vertical memory structure
#520Three-dimensional flash memory system
#521Nonvolatile memory device and method for sensing the same
#522Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines and a single-sided word line architecture
#523Buffering systems for accessing multiple layers of memory in integrated circuits
#524Low read current architecture for memory
#525Semiconductor devices including auxiliary bit lines
#526Non-volatile memory with multiple latency tiers
#527Signal timing alignment based on a common data strobe in memory devices configured for stacked arrangements
#528Non-volatile composite nanoscopic fabric NAND memory arrays and methods of making same
#529Memory arrays
#530Three dimensional memory device having well contact pillar and method of making thereof
#531Semiconductor memory device
#532Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
#533Semiconductor memory device including semi-selectable memory cells
#534Cross point arrays of 1-R nonvolatile resistive change memory cells using continuous nanotube fabrics
#535Vertical thin film transistor selection devices and methods of fabrication
#536Three dimensional NAND flash with self-aligned select gate
#537Memory tile access and selection patterns
#538Three dimensional memory and methods of forming the same
#539Three-dimensional vertical memory comprising dice with different interconnect levels
#540Implementation of a one time programmable memory using a MRAM stack design
#541Semiconductor memory device having unequal pitch vertical channel transistors employed as selection transistors and method for programming the same
#542Single level cell write buffering for multiple level cell non-volatile memory
#543Method and apparatus for decoding memory
#544Sense amplifier with integrating capacitor and methods of operation
#545Constructions comprising stacked memory arrays
#546Method of operating memory array having divided apart bit lines and partially divided bit line selector switches
#547Conductive metal oxide structures in non-volatile re-writable memory devices
#548Connections for memory electrode lines
#549Memory device
#550Three-dimensional (3D) semiconductor device
#551Memory metal scheme
#552Three dimensional resistive memory architectures
#553Resistance-based memory with auxiliary redundancy information
#554Accessing memory cells in parallel in a cross-point array
#555Adaptive data shaping in nonvolatile memory
#556Stack of horizontally extending and vertically overlapping features, methods of forming circuitry components, and methods of forming an array of memory cells
#557Memory system
#5581-R resistive change element arrays using resistive reference elements
#559Data processing system having combined memory block and stack package
#560Electronic device including a semiconductor memory unit that includes cell mats of a plurality of planes vertically stacked
#561Discrete three-dimensional one-time-programmable memory
#562Three-dimensional one-time-programmable memory comprising off-die read/write-voltage generator
#563Resistive memory device and resistive memory system including a plurality of layers, and method of operating the system
#564Semiconductor memory device and method of controlling the same
#565Stack type semiconductor memory device
#566Two stage forming of resistive random access memory cells
#567Cross-point memory device including multi-level cells and operating method thereof
#568Memory array having divided apart bit lines and partially divided bit line selector switches
#569Monolithic three dimensional memory arrays with staggered vertical bit line select transistors and methods therfor
#5703D stacked semiconductor memory architecture with conductive layer arrangement
#571High endurance non-volatile storage
#572Low forming voltage non-volatile storage device
#573Disturb condition detection for a resistive random access memory
#574Resistive change element arrays using resistive reference elements
#575Resistive memory device and operating method
#576Monolithic three dimensional memory arrays with staggered vertical bit lines and dual-gate bit line select transistors
#577Biasing of unselected blocks of non-volatile memory to reduce loading
#578Dual polarity read operation
#579Memory cell array structures and methods of forming the same
#580Semiconductor device with stacked structure of memory cells over sensing amplifiers, circuit board, and electronic device
#581Methods and apparatus for vertical cross point re-RAM array bias calibration
#582Reading resistive random access memory based on leakage current
#583Semiconductor constructions, and methods of forming cross-point memory arrays
#584Semiconductor memory device
#585Anti-fuse type one-time programmable memory cell and anti-fuse type one-time programmable memory cell arrays
#586Word line repair for 3D vertical channel memory
#587Semiconductor storage device
#588Three-dimensional array of re-programmable non-volatile memory elements having vertical bit lines
#589Semiconductor memory device and method of controlling the same
#590Semiconductor system for implementing an ising model of interaction
#591Method and apparatus for decoding memory
#592Self-repair logic for stacked memory architecture
#593Nonvolatile memory device with reduced coupling noise and driving method thereof
#594Methods of producing and controlling tunneling electroresistance and tunneling magnetoresistance in a multiferroic tunnel junction
#595Electronic devices having semiconductor memory units and method for fabricating the same
#596Resistive memory device having memory cell arrays with multiple stack layers and bad-region managing circuit and method for managing short failure
#597Multiple layer forming scheme for vertical cross point reram
#598Semiconductor memory device having unequal pitch vertical channel transistors used as selection transistors
#599Nonvolatile memory device and method for sensing the same
#600Bias to detect and prevent short circuits in three-dimensional memory device