NON-VOLATILE MEMORY STRUCTURE WITH SINGLE CELL OR TWIN CELL SENSING

Ferroelectric memory structure with different ferroelectric capacitors

CMOS image sensors with integrated RRAM-based crossbar array circuits

Switch device, storage apparatus, and memory system incorporating boron and carbon

Closed loop programming of phase-change memory

Storage device and storage unit with a chalcogen element

Array of cross point memory cells and methods of forming an array of cross point memory cells

Dedicated commands for memory operations

Storage device and control method for controlling operations of the storage device

Dedicated contacts for controlled electroforming of memory cells in resistive random-access memory array

Array of cross point memory cells and methods of forming an array of cross point memory cells

Memory controller and memory system for suppression of fluctuation of voltage drop

Integrated circuits with programmable non-volatile resistive switch elements

Nonvolatile SRAM

Single-readout high-density memristor crossbar

Field-programmable crossbar array for reconfigurable computing

System to duplicate neuromorphic core functionality

Array of cross point memory cells and methods of forming an array of cross point memory cells

Sensing circuit for resistive memory array

Nonvolatile semiconductor memory device changing the number of selected bits and/or the number of selected bays at data write operation

Resistive memory device

High density stacked CNT memory cube arrays with memory selectors