TUNED MATERIALS, TUNED PROPERTIES, AND TUNABLE DEVICES FROM ORDERED OXYGEN VACANCY COMPLEX OXIDES

TECHNOLOGIES FOR HIGH-PERFORMANCE MAGNETOELECTRIC SPIN-ORBIT LOGIC

Two-dimensional materials integrated with multiferroic layers

Magnetic material and magnetic element

Laminated structure and spin modulation element

Controlling structural phase transitions and properties of two-dimensional materials by integrating with multiferroic layers

Two-dimensional materials integrated with multiferroic layers

Multiferroic materials

Semiconductor device

Magnetic element, skyrmion memory, solid-state electronic device, data-storage device, data processing and communication device

Perpendicular magnetization film, perpendicular magnetization film structure, magnetoresistance element, and perpendicular magnetic recording medium

Perpendicular MTJ stacks with magnetic anisotrophy enhancing layer and crystallization barrier layer

Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer

Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer

Magnetic memory and method of fabricating the same

Magnetic element with improved out-of-plane anisotropy for spintronic applications

Magnetoresistive element and magnetic memory

Spin transistor and method of operating the same

Magnetic material for magneto-optical isolator

Spin field effect transistor using half metal and method of manufacturing the same

Magnetoresistive element

Magnetoelectronic devices based on colossal magnetoresistive thin films

Magnetoresistance effect element having a lower magnetic layer formed over a base substrate through a transition metal oxide layer having a predetermined orientation plane

Method for fabricating a magnetoresistive film and magnetoresistive film