ClassID:

201557

H01F10/193 - CPC Classification

Classification description:

Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds Magnetic semiconductor compounds

Sub-classes:
Recent Application in this class:
#1
20220084731
2022-03-17

Oxide interface displaying electronically controllable ferromagnetism

#2
20210293908
2021-09-23

Magnonic magneto-resistance device including two-dimensional spacer and electronic equipment comprising the same

#3
20210165058
2021-06-03

Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator

#4
20200251268
2020-08-06

Magnetoresistance effect element

#5
20200126705
2020-04-23

Oxide interface displaying electronically controllable ferromagnetism

#6
20190094315
2019-03-28

Stacked structure, magnetoresistive effect element, magnetic head, sensor, high frequency filter, and oscillator

#7
20180006657
2018-01-04

Spin torque oscillator with high power output and its applications

#8
20160161772
2016-06-09

Optical isolator

#9
20140321199
2014-10-30

Nano multilayer film, field effect tube, sensor, random accessory memory and preparation method

#10
20140255687
2014-09-11

Crystal and laminate

#11
20140220708
2014-08-07

MR enhancing layer (MREL) for spintronic devices

#12
20140220385
2014-08-07

MR enhancing layer (MREL) for spintronic devices

#13
20120292554
2012-11-22

ELECTROMAGNETIC WAVE ABSORBENT MATERIAL

#14
20120002330
2012-01-05

CPP-type magnetoresistive element including spacer layer

#15
20110260270
2011-10-27

MR enhancing layer (MREL) for spintronic devices

#16
20110186948
2011-08-04

Semiconductor-Based Magnetic Material

#17
20110183133
2011-07-28

ELECTROMAGNETIC WAVE ABSORBENT MATERIAL

#18
20110103138
2011-05-05

SINGLE-CHARGE TUNNELING DEVICE

#19
20110038198
2011-02-17

Electronic devices based on current induced magnetization dynamics in single magnetic layers

#20
20100224912
2010-09-09

Chromium doped diamond-like carbon

#21
20100164487
2010-07-01

Method for ultra-fast controlling of a magnetic cell and related devices

#22
20100064771
2010-03-18

TRANSITION METAL-DOPED OXIDE SEMICONDUCTOR EXHIBITING ROOM-TEMPERATURE FERROMAGNETISM

#23
20090230954
2009-09-17

Ferromagnetic semiconductor, method for the production thereof, components incorporating the same, and corresponding uses of said semiconductor

#24
20090220779
2009-09-03

PIEZOELECTRIC COMPONENT HAVING A MAGNETIC LAYER

#25
20090148649
2009-06-11

Phase change magnetic material

#26
20090042058
2009-02-12

Magnetic semiconductor material

#27
20090039345
2009-02-12

Tunnel Junction Barrier Layer Comprising a Diluted Semiconductor with Spin Sensitivity

#28
20090004451
2009-01-01

Thin Magnetic Films

#29
20080311429
2008-12-18

MAGNETIC FILM, MAGNETIC RECORDING/ REPRODUCING DEVICE, AND POLARIZATION CONVERSION COMPONENT

#30
20080308853
2008-12-18

Tunnel transistor having spin-dependent transfer characteristics and non-volatile memory using the same

#31
20080277645
2008-11-13

Ferromagneic Influence on Quantum Dots

#32
20080087972
2008-04-17

Copper Doped Magnetic Semiconductors

#33
20080012004
2008-01-17

SPINTRONIC DEVICES WITH CONSTRAINED SPINTRONIC DOPANT

#34
20070285184
2007-12-13

Fully integrated tuneable spin torque device for generating an oscillating signal and method for tuning such apparatus

#35
20070200156
2007-08-30

Single-charge tunnelling device

#36
20070190367
2007-08-16

Manganese Doped Magnetic Semiconductors

#37
20070183190
2007-08-09

Method for ultra-fast controlling of a magnetic cell and related devices

#38
20070059877
2007-03-15

Spin transistor using spin-orbit coupling induced magnetic field

#39
20060197128
2006-09-07

Ferromagnetic-semiconductor spin polarizer of electrons in nonmagnetic semiconductors

#40
20060148105
2006-07-06

Ferromagnetic material

#41
20060118839
2006-06-08

Tunnel transistor having spin-dependent transfer characteristics and non-volatile memory using the same

#42
20060108619
2006-05-25

Ferromagnetic IV group based semiconductor, ferromagnetic III-V group based compound semiconductor, or ferromagnetic II-IV group based compound semiconductor, and method for adjusting their ferromagnetic characteristics

#43
20060076592
2006-04-13

Integratable polarization rotator

#44
20060060815
2006-03-23

Transition metal-doped oxide semiconductor exhibiting room-temperature ferromagnetism

#45
20060060776
2006-03-23

Method of sensing a gas by detecting change in magnetic properties

#46
20050260332
2005-11-24

Formation of combinatorial arrays of materials using solution-based methodologies

#47
20050233163
2005-10-20

Titanium dioxide - Cobalt magnetic film and method of its manufacture

#48
20050045976
2005-03-03

Room temperature ferromagnetic semiconductor grown by plasma enhanced molecular beam epitaxy and ferromagnetic semiconductor based device